Bidirectional long cavity semiconductor laser for improved power and efficiency
The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam.
1. A semiconductor laser device comprising:
a semiconductor laser chip comprising:
a first facet and a second facet defining a laser cavity therebetween; and
a laser waveguide, extending between the first facet and the second facet, comprising an active layer for generating laser light, wherein
the first facet includes an anti-reflection coating that is configured for reflecting back into the laser cavity a first portion of the laser light and for outputting a second portion of the laser light,
the second facet includes an anti-reflection coating that is configured for reflecting back into the laser cavity a third portion of the laser light and for outputting a fourth portion of the laser light,
the second portion and the fourth portion are combined outside the laser cavity,
and
a buildup of a carrier density near the first facet and the second facet is reduced, thereby providing for greater gain uniformity along the laser cavity.
2. The semiconductor laser device of claim 1 , wherein at least 90% of the laser light travels the laser cavity one time before exiting through the first facet or the second facet.
3. The semiconductor laser device of claim 1 , further comprising:
a ridge that extends between the first facet and the second facet.
4. The semiconductor laser device of claim 1 , wherein the laser waveguide has a width in a range of:
3 to 5 microns, or
80 to 200 microns.
5. The semiconductor laser device of claim 1 , wherein the laser cavity is at least 5 mm long.
6. The semiconductor laser device of claim 1 , further comprising:
first beam collimating optics for collimating laser light, emitted from the first facet, into a first collimated beam; and
second beam collimating optics for collimating laser light, emitted from the second facet, into a second collimated beam.
7. The semiconductor laser device of claim 6 , further comprising:
a first reflector for reflecting the first collimated beam; and
a second reflector for reflecting the second collimated beam.
8. The semiconductor laser device of claim 7 , further comprising:
a beam combiner for combining the reflected, first collimated beam and the reflected, second collimated beam into a single output beam.
9. An apparatus comprising:
a plurality of semiconductor laser devices,
wherein each semiconductor laser device, of the plurality of semiconductor laser devices, includes a semiconductor laser chip including:
a first facet and a second facet defining a laser cavity therebetween; and
a laser waveguide, extending between the first facet and the second facet, comprising an active layer for generating laser light, wherein
the first facet includes an anti-reflection coating that is configured for reflecting back into the laser cavity a first portion of the laser light and for outputting a second portion of the laser light,
the second facet includes an anti-reflection coating that is configured for reflecting back into the laser cavity a third portion of the laser light and for outputting a fourth portion of the laser light,
the second portion and the fourth portion are combined outside the laser cavity,
a buildup of a carrier density near the first facet and the second facet is reduced, thereby providing for greater gain uniformity along the laser cavity.
10. The apparatus of claim 9 , wherein at least 90% of the laser light travels the laser cavity one time before exiting through the first facet or the second facet.
11. The apparatus of claim 9 , wherein the laser cavity is at least 5 mm long.
12. The apparatus of claim 9 , further comprising:
first beam collimating optics for collimating laser light, emitted from the first facet of each of the plurality of semiconductor laser devices, into a first collimated beam; and
second beam collimating optics for collimating laser light, emitted from the second facet of each of the plurality of semiconductor laser devices, into a second collimated beam.
13. The apparatus of claim 12 , further comprising:
a first reflector for reflecting the first collimated beam; and
a second reflector for reflecting the second collimated beam.
14. The apparatus of claim 13 , further comprising:
a beam combiner for combining the reflected, first collimated beam and the reflected, second collimated beam into a single output beam.
15. A method comprising:
generating, using an active layer, laser light, wherein
the active layer is located within a laser waveguide of a semiconductor laser chip that includes a first facet and a second facet defining an unfolded a laser cavity therebetween,
the laser waveguide extends between the first facet and the second facet, and
the first facet and the second facet each include an anti-reflection coating;
reflecting, using the first facet, a first portion of the laser light;
outputting, using the first facet and the second facet, a second portion of the laser light;
reflecting, using the second facet, a third portion of the laser light; and
outputting, using the second facet, a fourth portion of the laser light,
combining the second portion and the fourth portion outside the laser cavity,
wherein a buildup of a carrier density near the first facet and the second facet is reduced, thereby providing for greater gain uniformity along the laser cavity.
16. The method of claim 15 , wherein at least 90% of the laser light travels the laser cavity one time before exiting through the first facet or the second facet.
17. The method of claim 15 , wherein the laser waveguide has a width in a range of:
3 to 5 microns, or
80 to 200 microns.
18. The method of claim 15 , wherein the laser cavity is at least 5 mm long.
19. The method of claim 15 , further comprising:
collimating, using first beam collimating optics, laser light, emitted from the first facet, into a first collimated beam; and
collimating, using second beam collimating optics, laser light, emitted from the second facet, into a second collimated beam.
20. The method of claim 19 , further comprising:
combining, using a beam combiner, the first collimated beam and the second collimated beam into a single output beam.