Optoelectronic component and method for the production thereof

1. An optoelectronic component

comprising a layer structure comprising a luminous-active layer, wherein

the luminous-active layer has a higher density of V-defects in a first lateral region than in a second lateral region,

in a plan view at least some of the V-defects have a contour which is given by a hexagon, a dodecagon or a honeycomb-like structure,

at least some of the V-defects which have the contour which is given by a hexagon, a dodecagon or a honeycomb-like structure are arranged at the lattice points of a lattice.

2. The optoelectronic component according to claim 1 ,

wherein the lattice is a rectangular lattice, a hexagonal lattice or a triangular lattice.

3. The optoelectronic component according to claim 1 ,

wherein the lattice is present in the first lateral region.

4. The optoelectronic component according to claim 1 ,

wherein every point of the second lateral region is at a distance from a V-defect in the first lateral region that is not greater than a defined value in a lateral direction, wherein the defined value is between 0.2 μm and 10 μm.

5. The optoelectronic component according to claim 1 ,

wherein the V-defects are distributed in a lateral direction of the layer structure in such a way that each lateral portion of the luminous-active layer in a lateral direction is at most at a maximum distance from a V-defect which corresponds to a charge carrier diffusion length, in particular to a hole diffusion length.

6. The optoelectronic component according to claim 5 ,

wherein at least some lateral portions of the luminous-active layer of the layer structure, in particular each lateral portion of the luminous-active layer of the layer structure, are supplied with charge carriers injected through V-defects.

7. The optoelectronic component according to claim 1 ,

wherein the density of V-defects varies along a predefined lateral direction.

8. A method for producing an optoelectronic component

comprising the following steps:

providing a substrate;

growing a layer structure onto the substrate, wherein

the layer structure comprises a luminous-active layer,

V-defects are embedded into the luminous-active layer,

more V-defects per lateral area are embedded in a first lateral region of the luminous-active layer than in a second lateral region of the luminous-active layer,

in a plan view at least some of the V-defects have a contour which is given by a hexagon, a dodecagon or a honeycomb-like structure,

at least some of the V-defects which have the contour which is given by a hexagon, a dodecagon or a honeycomb-like structure are arranged at the lattice points of a lattice.

9. The method according to claim 8 ,

wherein a mask layer having an opening in the first lateral region is created before the growth of the luminous-active layer.

10. The method according to claim 8 ,

wherein elevations are created at a surface of the substrate and

wherein an elevation is created at the surface of the substrate in the first lateral region.

11. The method according to claim 8 ,

wherein the growth is carried out with MOVPE and wherein during growth at least one of growth conditions is adjusted as follows:

growth temperature of at most 950° C.,

growth pressure of at least 10 mbar.