Image pixels with in-column comparators
Image sensors may include imaging pixels that have comparators to read out image pixel signals. An imaging pixel may include a photodiode, a floating diffusion region, and a transfer transistor that transfers charge from the photodiode to the floating diffusion region. The floating diffusion region may be coupled to a source follower transistor. The source follower transistor may be coupled to a current source. A row select transistor may be interposed between the source follower transistor and the current source. To form an in-column comparator stage and reduce power consumption, an additional transistor may be interposed between the row select transistor and the current source. The additional transistor may be a pMOS transistor and the source follower transistor may be an nMOS transistor. The additional transistor may have a gate that receives a searching voltage that is ramped from a maximum value to a minimum value.
1. An imaging pixel comprising:
a photodiode;
a current source;
a source follower transistor that is coupled to the current source;
a row select transistor that is interposed between the source follower transistor and the current source; and
an additional transistor that is interposed between the row select transistor and the current source, wherein the additional transistor has a gate that receives a searching voltage and wherein the searching voltage is ramped from a maximum value to a minimum value using a step-by-step algorithm.
2. The imaging pixel defined in claim 1 , further comprising:
a floating diffusion region, wherein the floating diffusion region is coupled to the gate of the source follower transistor and wherein the floating diffusion region is coupled to a bias voltage supply line by a reset transistor; and
a transfer transistor that is configured to transfer charge from the photodiode to the floating diffusion region.
3. The imaging pixel defined in claim 1 , wherein the source follower transistor is an nMOS transistor and the additional transistor is a pMOS transistor.
4. The imaging pixel defined in claim 1 , wherein the source follower transistor is a pMOS transistor and the additional transistor is an nMOS transistor.
5. The imaging pixel defined in claim 1 , wherein the additional transistor forms an in-column comparator stage that has an in-column comparator output.
6. The imaging pixel defined in claim 5 , further comprising a comparator that has first and second inputs, wherein the in-column comparator output is supplied to the first input and a reference voltage is supplied to the second input.
7. The imaging pixel defined in claim 5 , further comprising a digital buffer that receives the in-column comparator output.
8. The imaging pixel defined in claim 5 , further comprising a clamping circuit, wherein the clamping circuit is coupled to a node that is interposed between the additional transistor and the in-column comparator output.
9. The imaging pixel defined in claim 8 , wherein the clamping circuit comprises an nMOS transistor and wherein the additional transistor is a pMOS transistor.
10. The imaging pixel defined in claim 1 , wherein the additional transistor has a bulk that is coupled to a node between the additional transistor and the row select transistor.
11. The imaging pixel defined in claim 1 , further comprising a cascade transistor interposed between the additional transistor and the current source.
12. The imaging pixel defined in claim 1 , wherein the additional transistor is coupled between a first node that is interposed directly between the row select transistor and the additional transistor and a second node that is interposed directly between the current source and the additional transistor.
13. An imaging pixel comprising:
a photodiode;
a floating diffusion region;
a current source;
a source follower transistor that is coupled to the current source and to the floating diffusion region, wherein the source follower transistor is a transistor of a first type;
a row select transistor that is interposed between the source follower transistor and the current source; and
an additional transistor that is interposed between the row select transistor and the current source, wherein the additional transistor is a transistor of a second type that is the opposite of the first type and wherein the additional transistor serves as a first stage in a comparator used for readout.
14. The imaging pixel defined in claim 13 , wherein the first type of transistor is an nMOS transistor and wherein the second type of transistor is a pMOS transistor.
15. The imaging pixel defined in claim 13 , wherein an output from the first stage is coupled to an input in an additional stage in the comparator.
16. The imaging pixel defined in claim 13 , wherein an output from the first stage is coupled to a digital buffer.
17. An imaging pixel comprising:
a photodiode;
a floating diffusion region;
a current source;
a source follower transistor that is coupled to the current source, wherein the floating diffusion region is coupled to a gate of the source follower transistor and wherein the source follower transistor is an nMOS transistor;
a row select transistor that is interposed between the source follower transistor and the current source; and
an additional transistor that is interposed between the row select transistor and the current source, wherein the additional transistor is a pMOS transistor, wherein the additional transistor serves as a first stage in a comparator used for readout, and wherein the additional transistor has a gate that receives a searching voltage.
18. The imaging pixel defined in claim 17 , wherein an output from the first stage is coupled to an input in an additional stage in the comparator.
19. An imaging pixel comprising:
a photodiode;
a current source;
a source follower transistor that is coupled to the current source;
a row select transistor that is interposed between the source follower transistor and the current source; and
an additional transistor that is interposed between the row select transistor and the current source, wherein the additional transistor has a gate that receives a searching voltage, wherein the source follower transistor is a transistor of a first type, and wherein the additional transistor is a transistor of a second type that is the opposite of the first type.