A memory device includes a memory cell array including a plurality of memory cell groups, and a decoder circuit configured to control selection of the memory cell groups. The decoder circuit includes an address decoder circuit configured to activate the decoder circuit based on an input address, a plurality of information retention circuits, each of which corresponds to one of the memory cell groups and outputting a signal that indicates whether or not the corresponding memory cell group is defective, a transistor having a gate connected to each of the outputs of the information retention circuits, and a signal output circuit configured to output a control signal for selecting or not selecting the memory cell groups based on an on/off state of the transistor.
1. A memory device comprising:
a memory cell array including a plurality of memory cell groups; and
a decoder circuit configured to control selection of the memory cell groups, the decoder circuit including:
an address decoder circuit including a plurality of first transistors of which channels are connected in series, and configured to activate the decoder circuit based on an input address, wherein the number of the first transistors corresponds to a number of bits of the input address, and signals corresponding to the input address are input to gates of the first transistors,
a plurality of information retention circuits, each of which corresponds to one of the memory cell groups and outputs a signal that indicates whether or not the corresponding memory cell group is defective,
a second transistor having a gate connected to each of the outputs of the information retention circuits and a channel connected in series to the channels of the first transistors, and
a signal output circuit configured to output a control signal for selecting or not selecting the memory cell groups based on an on/off state of the second transistor.
2. The device according to claim 1 , wherein the decoder circuit is a shared decoder circuit and the memory cell groups are each a block of memory cells that are erased collectively as a unit.
3. The device according to claim 1 , wherein the memory cell groups are string units that together form one block of memory cells that are erased collectively as a unit, each of the string units including a plurality of strings, where each string includes a plurality of memory cells connected in series.
4. The device according to claim 1 , wherein the second transistor is turned on to cause the signal output circuit to output the control signal for selecting the memory cell groups, and turned off to cause the signal output circuit to output the control signal for not selecting the memory cell groups.
5. The device according to claim 1 , wherein each of the information retention circuits is a latch circuit.
6. The device according to claim 5 , wherein the latch circuit includes a flip-flop circuit.
7. The device according to claim 6 , wherein the latch circuit further includes a first transfer gate connected between a first output node of the flip-flop circuit and the gate of the second transistor and a second transfer gate connected between a second output node of the flip-flop circuit and the gate of the second transistor, the first and second transfer gates being controlled in accordance with control signals.
8. The device according to claim 1 , further comprising:
a non-volatile memory storing information about which memory cell groups are defective; and
a control unit configured to read the information from the non-volatile memory and set a voltage level of a node connected to the information retention circuits based on the information.
9. The device according to claim 8 , wherein each of the information retention circuits retains the information stored in the non-volatile memory for a corresponding one of the memory cell groups.
10. A memory device comprising:
a memory cell array including a plurality of blocks of memory cells; and
a block decoder circuit including a signal output circuit, an address decoder circuit including a plurality of first transistors of which channels are connected in series, a first latch storing first information indicating whether or not a first group of memory cells is a defective group, and a second latch storing second information indicating whether or not a second group of memory cells is a defective group, wherein
the number of the first transistors corresponds to a number of bits of an input address, and signals corresponding to the input address are input to aates of the first transistors, and
the first and second latches have outputs that are each connected to a gate of a second transistor that causes the signal output circuit to generate either a block selection signal or a block non-selection signal, a channel of the second transistor being connected in series to the channels of the first transistors.
11. The device according to claim 10 , wherein the block decoder circuit is a shared decoder circuit and the first and second groups of memory cells are each a block of memory cells that are erased collectively as a unit.
12. The device according to claim 10 , wherein the first and second groups of memory cells are each a string unit that includes a plurality of strings, where each string includes a plurality of memory cells connected in series.
13. The device according to claim 10 , wherein the second transistor is turned on to cause the signal output circuit to output the block selection signal, and turned off to cause the signal output circuit to output the block non-selection signal.
14. The device according to claim 10 , wherein each of the first and second latch circuits includes a flip-flop circuit.
15. The device according to claim 14 , wherein each of the first and second latch circuits further includes a first transfer gate connected between a first output node of the flip-flop circuit and the gate of the second transistor and a second transfer gate connected between a second output node of the flip-flop circuit and the gate of the second transistor, the first and second transfer gates being controlled in accordance with control signals.
16. The device according to claim 10 , further comprising:
a non-volatile memory storing information about which groups of memory cells are defective; and
a control unit configured to read the information from the non-volatile memory and set a voltage level of a node connected to the first and second latch circuits based on the information.
17. The device according to claim 16 , wherein the first latch circuit retains the information stored in the non-volatile memory for the first group of memory cells, and the second latch circuit retains the information stored in the non-volatile memory for the second group of memory cells.
18. The device according to claim 1 , wherein
the channel of the second transistor is connected between an input node of the signal output circuit and the address decoder circuit.
19. The device according to claim 18 , further comprising:
a third transistor having a channel that is connected in parallel with the channel of the second transistor and between the input node of the signal output circuit and the address decoder circuit, the third transistor being turned on when information is set in at least one of the information retention circuits.
20. The device according to claim 10 , wherein
the channel of the second transistor is connected between an input node of the signal output circuit and the address decoder circuit, and
the device further comprises a third transistor having a channel that is connected in parallel with the channel of the second transistor and between the input node of the signal output circuit and the address decoder circuit, the third transistor being turned on when information is set in at least one of the information retention circuits.