Resin-encapsulatd semiconductor device and method of manufacturing the same

1. A method of manufacturing a resin-encapsulated semiconductor device including a first resin encapsulated body and a second resin encapsulated body, the method comprising:

forming a plurality of inner wiring lines on one main surface of a substrate;

forming an external terminal on a part of a surface of at least one inner wiring line of the plurality of inner wiring lines on a side opposite to the substrate;

connecting electrically a first semiconductor element and the plurality of inner wiring lines to each other;

encapsulating, in a first resin, the one main surface side of the substrate on which the plurality of inner wiring lines, the external terminal, and the first semiconductor element are arranged;

grinding a surface of the first resin opposite to a surface on which the first resin is in contact with the substrate, to thereby expose a rear surface of the external terminal and a surface of the first semiconductor element opposite to a face side thereof;

opening another main surface of the substrate except for edge portions thereof, to thereby expose the plurality of inner wiring lines and the first resin;

connecting electrically a second semiconductor element and the plurality of inner wiring lines to each other via a metal body;

encapsulating, in a second resin, the second semiconductor element, the metal body, and the plurality of inner wiring lines to integrally form the first resin and the second resin so as to be in intimate contact with each other, to thereby form a resin encapsulated body; and

separating the resin encapsulated body into individual resin-encapsulated semiconductor devices.

2. A method of manufacturing a resin-encapsulated semiconductor device according to claim 1 , wherein the substrate comprises any one of an iron-based alloy material, a copper-based alloy material, a nickel-based alloy material, and an organic material.

3. A method of manufacturing a resin-encapsulated semiconductor device according to claim 1 , wherein one of each of the plurality of inner wiring lines and the external terminal is formed on the substrate by any one of electrolytic plating, electroless plating, and printing.

4. A method of manufacturing a resin-encapsulated semiconductor device according to claim 1 , wherein a material of the external terminal comprises one of a single layer material of any one of solder, gold, silver, copper, aluminum, palladium, and nickel, and a multilayer metal material comprising laminated layers of at least two metals thereof.

5. A method of manufacturing a resin-encapsulated semiconductor device according to claim 1 , wherein the opening another main surface of the substrate except for edge portions thereof, to thereby expose the plurality of inner wiring lines and the first resin is performed by one of wet etching and dry etching.

6. A method of manufacturing a resin-encapsulated semiconductor device according to claim 1 , wherein the first semiconductor element and the second semiconductor element are electrically connected to the plurality of inner wiring lines by a flip-chip method via bump electrodes formed on the first semiconductor element and the second semiconductor element, respectively.

7. A method of manufacturing a resin-encapsulated semiconductor device according to claim 1 , wherein at least one of the first semiconductor element and the second semiconductor element is electrically connected to the plurality of inner wiring lines by wire bonding via an electrode pad formed on the at least one of the first semiconductor element and the second semiconductor element.

8. A method of manufacturing a resin-encapsulated semiconductor device according to claim 1 , wherein each of the encapsulating in a first resin and the encapsulating in a second resin is performed by any one of transfer molding, potting, and pressing.

9. A method of manufacturing a resin-encapsulated semiconductor device according to claim 1 , wherein the separating the resin encapsulated body is performed by one of dicing or breaking.

10. A method of manufacturing a resin-encapsulated semiconductor device including a first resin encapsulated body and a second resin encapsulated body, the method comprising:

forming a plurality of inner wiring lines on one main surface of a substrate;

forming an external terminal on a part of a surface of at least one inner wiring line of the plurality of inner wiring lines on a side opposite to the substrate;

connecting electrically a first semiconductor element having a covering layer formed on a surface of the first semiconductor element opposite to a face side thereof, and the plurality of inner wiring lines to each other;

encapsulating, in a first resin, the one main surface side of the substrate on which the plurality of inner wiring lines, the external terminal, and the first semiconductor element having the covering layer formed on the surface opposite to the face side are arranged;

grinding a surface of the first resin opposite to a surface on which the first resin is in contact with the substrate, to thereby expose a rear surface of the external terminal and the covering layer formed on the surface of the first semiconductor element opposite to the face side;

opening another main surface of the substrate except for edge portions thereof, to thereby expose the plurality of inner wiring lines and the first resin;

connecting electrically a second semiconductor element and the plurality of inner wiring lines to each other via a metal body;

encapsulating, in a second resin, the second semiconductor element, the metal body, and the plurality of inner wiring lines to integrally form the first resin and the second resin so as to be in intimate contact with each other, to thereby form a resin encapsulated body; and

separating the resin encapsulated body into individual resin-encapsulated semiconductor devices.

11. A method of manufacturing a resin-encapsulated semiconductor device according to claim 10 , wherein the substrate comprises any one of an iron-based alloy material, a copper-based alloy material, a nickel-based alloy material, and an organic material.

12. A method of manufacturing a resin-encapsulated semiconductor device according to claim 10 , wherein one of each of the plurality of inner wiring lines and the external terminal is formed on the substrate by any one of electrolytic plating, electroless plating, and printing.

13. A method of manufacturing a resin-encapsulated semiconductor device according to claim 10 , wherein a material of the external terminal comprises one of a single layer material of any one of solder, gold, silver, copper, aluminum, palladium, and nickel, and a multilayer metal material comprising laminated layers of at least two metals thereof.

14. A method of manufacturing a resin-encapsulated semiconductor device according to claim 10 , wherein the opening another main surface of the substrate except for edge portions thereof, to thereby expose the plurality of inner wiring lines and the first resin is performed by one of wet etching and dry etching.

15. A method of manufacturing a resin-encapsulated semiconductor device according to claim 10 , wherein a material of the covering layer formed on the surface of the first semiconductor element opposite to the face side comprises one of a single layer material of any one of solder that is an alloy material, gold, silver, copper, aluminum, palladium, and nickel, and an epoxy resin that is an organic material, and a multilayer material comprising laminated layers of at least two materials thereof.

16. A method of manufacturing a resin-encapsulated semiconductor device according to claim 10 , wherein the first semiconductor element and the second semiconductor element are electrically connected to the plurality of inner wiring lines by a flip-chip method via bump electrodes formed on the first semiconductor element and the second semiconductor element, respectively.

17. A method of manufacturing a resin-encapsulated semiconductor device according to claim 10 , wherein at least one of the first semiconductor element and the second semiconductor element is electrically connected to the plurality of inner wiring lines by wire bonding via an electrode pad formed on the at least one of the first semiconductor element and the second semiconductor element.

18. A method of manufacturing a resin-encapsulated semiconductor device according to claim 10 , wherein each of the encapsulating in a first resin and the encapsulating in a second resin is performed by any one of transfer molding, potting, and pressing.

19. A method of manufacturing a resin-encapsulated semiconductor device according to claim 10 , wherein the separating the resin encapsulated body is performed by one of dicing or breaking.