IP Library Granted Patent US 10,147,838
Granted Patent B2
US 10,147,838 · App. 15/290,054 · Granted Dec 4, 2018

Vapor transport deposition method and system for material co-deposition

Inventors: John Barden (Ottawa Hills, OH); Rick C. Powell (Ann Arbor, MI)
Assignee: First Solar, Inc.
H01L31/1828C23C14/228C23C14/24C23C14/243C23C14/56C23C16/448H01L21/02557H01L21/02562H01L31/02963H01L31/046Y02E10/543Y02P70/521
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Quick Facts
Patent No.
US 10,147,838
App. No.
15/290,054
Granted
Dec 4, 2018
Kind
B2
Abstract

An improved feeder system and method for continuous vapor transport deposition that includes at least two vaporizers coupled to a common distributor through an improved seal for separately vaporizing and collecting at least any two vaporizable materials for deposition as a material layer on a substrate. Multiple vaporizers provide redundancy and allow for continuous deposition during vaporizer maintenance and repair.

Claims (38)

1. A method for depositing a material comprising:

vaporizing a first material powder into a first material vapor in a first permeable member of a first vaporizer unit within a vacuum vessel, wherein the first permeable member is permeable to vapor;

vaporizing a second material powder into a second material vapor in a second permeable member of a second vaporizer unit within the vacuum vessel, wherein the second permeable member is permeable to vapor;

collecting the first and second material vapors separately in the vacuum vessel; and

outputting the material vapors separately.

2. The method of claim 1 , wherein the step of collecting the first and second material vapors separately further comprises:

capturing the first material vapor from the first vaporizer unit in a first vapor housing;

passing the first material vapor from the first vapor housing to a first chamber in the vacuum vessel;

capturing the second material vapor from the second vaporizer unit in a second vapor housing; and

passing the second material vapor from the second vapor housing to a second chamber in the vacuum vessel.

3. The method of claim 2 , wherein the first and second material powders are a semiconductor material.

4. The method of claim 2 , wherein the first and second material powder are a mixture of two different semiconductor materials.

5. The method of claim 2 , wherein the first and second material powders are a mixture of a semiconductor material and a dopant.

6. The method of claim 3 , wherein the semiconductor material is CdTe.

7. The method of claim 3 , wherein the semiconductor material is CdS.

8. The method of claim 4 , wherein at least one of the two semiconductor materials is CdTe.

9. The method of claim 5 , wherein the semiconductor material is CdTe and the dopant is Si.

10. A method for continuous vapor transport deposition of a material on a substrate comprising:

vaporizing a first material powder into a first material vapor in a first vaporizing unit comprising a first permeable member within a vacuum vessel, wherein the first permeable member is permeable to vapor;

vaporizing a second material powder into a second material vapor in a second vaporizer unit comprising a second permeable member within the vacuum vessel, wherein the second permeable member is permeable to vapor;

passing the first and second material vapors from the first and second vaporizer units into separate chambers in the vacuum vessel;

separately outputting the vapor first and second material vapors onto a substrate; and

deactivating the first vaporizer unit and continuing to pass the second material vapor from the second vaporizer unit for output; or

deactivating the second vaporizer unit and continuing to pass the first material vapor from the first vaporizer unit for output.

11. The method of claim 10 , wherein the first or second material vapor is a semiconductor material vapor.

12. The method of claim 10 , wherein the first material vapor and the second material vapor are each semiconductor material vapors.

13. The method of claim 10 , wherein the first and second material vapors comprise a semiconductor material vapor and a dopant.

14. The method of claim 11 , wherein the semiconductor material vapor is CdTe vapor.

15. The method of claim 12 , wherein at least one of the first and the second semiconductor material vapors is CdTe vapor.

16. The method of claim 13 , wherein the semiconductor material vapor is CdTe vapor and the dopant is Si.

17. A method for depositing a material comprising:

vaporizing a first material powder into a first material vapor in a first vaporizer unit housed within a vacuum vessel;

vaporizing a second material powder into a second material vapor in a second vaporizer unit housed within the vacuum vessel;

collecting the first and second material vapors separately in the vacuum vessel; and

outputting the material vapors separately.

18. The method of claim 2 , wherein a seal extends from a first opening in the first vapor housing into a vapor distribution unit.

19. The method of claim 10 , wherein the first and second vaporizer units are within first and second vapor housings, and wherein a seal extends from an opening in the first vapor housing into a vapor distribution unit.

20. The method of claim 17 , wherein the first vaporizer unit is within a first vapor housing and the second vaporizer unit is within a second vapor housing, and wherein a seal extends from a first opening in the first vapor housing into a vapor distribution unit.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Feb 13, 2026
From: JPMORGAN CHASE BANK, N.A.
To: FIRST SOLAR, INC.
Reel/Frame 074858/0364 →
SECURITY INTEREST Recorded Jul 10, 2023
From: FIRST SOLAR, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 064237/0462 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Recorded Nov 15, 2021
From: JPMORGAN CHASE BANK, N.A.
To: FIRST SOLAR, INC.
Reel/Frame 058132/0566 →
PATENT SECURITY AGREEMENT Recorded Jul 12, 2017
From: FIRST SOLAR, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 043177/0581 →
Continuity (3)
Division 13671195 · Nov 7, 2012
Provisional Application 61561691 · Nov 18, 2011
Related Publication 20170092803A1 · Mar 30, 2017