Nitride semiconductor device and method of manufacturing the same
A nitride semiconductor device includes a conductive substrate and a nitride semiconductor layer. The nitride semiconductor layer is disposed on the conductive substrate. The nitride semiconductor layer includes a first transistor structure of a lateral type and a second transistor structure of a lateral type. The conductive substrate includes a first potential control region and a second potential control region capable of controlling potential independently from the first potential control region. In planar view of the nitride semiconductor layer, the first transistor structure overlaps the first potential control region and the second transistor structure overlaps the second potential control region.
1. A nitride semiconductor device comprising:
a conductive substrate comprising conductive property; and
a nitride semiconductor layer disposed on the conductive substrate and including a first transistor structure of a lateral type and a second transistor structure of a lateral type,
wherein
the conductive substrate includes a first potential control region and a second potential control region capable of controlling potential independently from the first potential control region, and
in planar view of the nitride semiconductor layer, the first transistor structure overlaps the first potential control region and the second transistor structure overlaps the second potential control region.
2. The nitride semiconductor device according to claim 1 , wherein
an isolation region is disposed between the first potential control region and the second potential control region, the isolation region being configured to electrically isolate the first potential control region and the second potential control region from each other.
3. The nitride semiconductor device according to claim 2 , wherein
the isolation region is a trench disposed between the first potential control region and the second potential control region.
4. The nitride semiconductor device according to claim 2 , wherein
an element isolation structure is disposed in the nitride semiconductor layer, the element isolation structure being configured to electrically isolate the first transistor structure and the second transistor structure from each other, and
in the planar view of the nitride semiconductor layer, the element isolation structure overlaps the isolation region.
5. The nitride semiconductor device according to claim 1 , wherein
a semiconductor layer comprising higher resistance than the conductive substrate is disposed between the conductive substrate and the nitride semiconductor layer.
6. The nitride semiconductor device according to claim 1 , wherein
one of a pair of main electrodes corresponding to the first transistor structure is short-circuited to the first potential control region, and
one of a pair of main electrodes corresponding to the second transistor structure is short-circuited to the second potential control region.
7. The nitride semiconductor device according to claim 6 , further comprising a conductive member with which a through hole extending from a front surface of the nitride semiconductor layer to the conductive substrate is filled,
wherein
the conductive member comprises a first conductive member and a second conductive member,
the one of the pair of main electrodes corresponding to the first transistor structure is short-circuited to the first potential control region via the first conductive member, and
the one of the pair of main electrodes corresponding to the second transistor structure is short-circuited to the second potential control region via the second conductive member.
8. The nitride semiconductor device according to claim 6 , wherein
at least one of the first transistor structure and the second transistor structure corresponds to an upper arm of a full bridge circuit,
the one of the pair of main electrodes corresponding to the first transistor structure is a source electrode, and
the one of the pair of main electrodes corresponding to the second transistor structure is a source electrode.
9. The nitride semiconductor device according to claim 1 , wherein each of the first transistor structure and the second transistor structure is a heterojunction field effect transistor structure.
10. The nitride semiconductor device according to claim 1 , wherein the nitride semiconductor layer is an epitaxial layer.
11. A method of manufacturing a nitride semiconductor device, the method comprising:
forming a nitride semiconductor layer on a conductive substrate;
forming a plurality of transistor structures in the nitride semiconductor layer; and
dividing the conductive substrate into a plurality of potential control regions configured capable of controlling potential independently from each other.
12. The method according to claim 11 , wherein
the dividing of the conductive substrate comprises forming a trench extending from a front surface to a rear surface of the conductive substrate.
13. The method according to claim 12 , wherein
the dividing of the conductive substrate comprises reducing a thickness of the conductive substrate before forming the trench.