Deposition system for growth of inclined c-axis piezoelectric material structures
Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
1. A deposition system comprising:
a linear sputtering apparatus comprising a target surface configured to eject metal atoms;
a substrate table comprising a support surface that is configured to receive at least one wafer and is coupled to a translation element, wherein the translation element is configured to translate the substrate table and the at least one wafer during operation of the linear sputtering apparatus; and
a collimator comprising a plurality of guide members defining a plurality of collimator apertures arranged between the linear sputtering apparatus and the substrate table, the collimator being linearly translatable;
wherein the target surface is arranged non-parallel to the support surface; and
wherein at least one of the substrate table or the collimator is electrically biased to a potential other than ground.
2. The deposition system of claim 1 , wherein the plurality of guide members is arranged non-perpendicular to the support surface.
3. The deposition system of claim 1 , wherein the substrate table is electrically biased to a potential other than ground.
4. The deposition system of claim 1 , wherein the collimator is electrically biased to a potential other than ground.
5. The deposition system of claim 1 , wherein the linear sputtering apparatus comprises a linear magnetron that includes a sputtering cathode operatively coupled to the target surface to promote ejection of metal atoms from the target surface.
6. The deposition system of claim 1 , wherein the linear sputtering apparatus comprises a linear ion beam sputtering apparatus.
7. The deposition system of claim 1 , wherein the plurality of guide members comprises a plurality of longitudinal members and a plurality of transverse members that form a grid.
8. The deposition system of claim 1 , wherein the plurality of guide members comprises a plurality of longitudinal members biased to a first electrical potential other than ground and comprises a plurality of transverse members crossing the plurality of longitudinal members, the transverse members being biased to a second electrical potential other than ground, and wherein the second electrical potential differs from the first electrical potential.
9. The deposition system of claim 1 , further comprising a collimator translation assembly arranged to linearly translate the collimator during operation of the linear sputtering apparatus.
10. The deposition system of claim 1 , further comprising a deposition aperture arranged between the collimator and the substrate table.
11. The deposition system of claim 10 , further comprising a uniformity shield configured to adjust dimensions of the deposition aperture.
12. The deposition system of claim 1 , wherein the support surface is configured to receive at least two wafers.
13. The deposition system of claim 1 , wherein the target surface comprises aluminum or zinc and is configured to eject aluminum atoms or zinc atoms.
14. The deposition system of claim 1 , being configured to receive a supply of sputtering gas, wherein the sputtering gas comprises a gas species adapted to react with the metal atoms.
15. The deposition system of claim 1 , operatively coupled to a source of sputtering gas comprising nitrogen or oxygen.
16. The deposition system of claim 1 , including at least one wafer received by the support surface, wherein the at least one wafer comprises a substrate, an acoustic reflector structure arranged over the substrate, and an electrode structure arranged over at least a portion of the acoustic reflector structure.
17. The deposition system of claim 1 , including at least one wafer received by the support surface, wherein the at least one wafer comprises a substrate defining a recess, a support layer is arranged over the recess, and an electrode structure is arranged over the support layer.
18. The deposition system of claim 1 , wherein the target surface is oriented 15 to 55 degrees apart from the substrate table.
19. The deposition system of claim 1 , being configured for growth of a hexagonal crystal structure piezoelectric material bulk layer over a seed layer that overlies a wafer received by the support surface, wherein at least 50% of the hexagonal crystal structure piezoelectric material bulk layer comprises a c-axis having an orientation distribution predominantly in a range of from 25 degrees to 50 degrees relative to normal of a face of the wafer.
20. The deposition system of claim 1 , being configured for growth of a hexagonal crystal structure piezoelectric material bulk layer over a seed layer that overlies a wafer received by the support surface, wherein at least 90% of the hexagonal crystal structure piezoelectric material bulk layer comprises a c-axis having an orientation distribution predominantly in a range of from 25 degrees to 50 degrees relative to normal of a face of the wafer.
21. The deposition system of claim 9 , wherein the collimator translation assembly is arranged to translate the collimator in a direction that is substantially perpendicular to a direction of translation of the substrate table.
22. The deposition system of claim 7 , wherein each of the longitudinal guide members is disposed at a non-perpendicular angle relative to a plane defined by the collimator.
23. The deposition system of claim 1 , wherein the target surface is arranged at a first non-parallel angle to the support surface and wherein the collimator is arranged at a second non-parallel angle to the support surface different from the first non-parallel angle.