IP Library Granted Patent US 9,947,838
Granted Patent B2
US 9,947,838 · App. 15/297,336 · Granted Apr 17, 2018

Method of producing a multicolor LED display

Inventors: Alexander F. Pfeuffer (Regensburg, DE); Martin Mandl (Lappersdorf, DE)
Assignee: OSRAM Opto Semiconductors GmbH
H01L33/504H01L27/156H01L33/0095H01L33/58H01L2933/0041H01L2933/0058
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Quick Facts
Patent No.
US 9,947,838
App. No.
15/297,336
Granted
Apr 17, 2018
Kind
B2
Abstract

A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.

Claims (13)

1. A method of producing a multicolor LED (light-emitting diode) display comprising an LED luminous unit having a multiplicity of pixels, wherein:

the pixels comprise first subpixels that emit a first color, second subpixels that emit a second color and third subpixels that emit a third color,

the subpixels contain an LED chip that emits radiation of the first color,

a first conversion layer that converts radiation of the first color into radiation of the second color is arranged at least above 1) the second subpixels and 2) above the LED luminous unit, and

a second conversion layer that converts radiation of the first color and/or the radiation of the second color into radiation of the third color is arranged above 1) the third subpixels and 2) the first conversion layer, comprising:

implementing at least one process step in which the first conversion layer or the second conversion layer is applied or removed in at least one defined region above the pixels to arrange the first conversion layer above the second subpixels and arrange the second conversion layer above the third subpixels,

electrically operating in the process step a portion of the LED chips, and

defining at least one region by electromagnetic radiation generated by the portion of the LED chips, generated heat or a generated electric field, wherein:

the second conversion layer is removed from the first subpixels and the second subpixels,

the first conversion layer is removed from the first subpixels, and

removal of the first conversion layer and/or of the second conversion layer is effected by a method of local layer removal locally amplified by the electric field generated by the portion of the LED chips.

2. The method according to claim 1 , wherein the method of local layer removal is a dry etching method.

3. The method according to claim 1 , wherein the pixels have a width of less than 100 μm.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051467/0906 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2016
From: PFEUFFER, ALEXANDER F.; MANDL, MARTIN
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 040060/0001 →
Priority Claims (1)
DE 10 2012 106 859 · Jul 27, 2012 · national
Continuity (2)
Continuation 14414744
Related Publication 20170040503A1 · Feb 9, 2017