Resonator structure with enhanced reflection of shear and longitudinal modes of acoustic vibrations

1. A solidly mounted resonator structure comprising:

a substrate;

an acoustic reflector structure arranged over the substrate and comprising a plurality of sequentially arranged differential acoustic impedance layer units, wherein each differential acoustic impedance layer unit of the plurality of sequentially arranged differential acoustic impedance layer units comprises a low acoustic impedance material layer in contact with a high acoustic impedance material layer;

at least one first electrode structure arranged over at least a portion of the acoustic reflector structure;

a piezoelectric material layer arranged over the at least one first electrode structure; and

at least one second electrode structure arranged over at least a portion of the piezoelectric material layer;

wherein:

at least one portion of the piezoelectric material layer is arranged between the at least one first electrode structure and the at least one second electrode structure to form at least one active region;

the solidly mounted resonator structure is configured for transduction of an acoustic wave having a longitudinal wavelength λ L in the at least one active region;

the low acoustic impedance material layer of each differential acoustic impedance layer unit comprises a thickness in a range of from 0.73λ L to 0.82λ L , and

the high acoustic impedance material layer of each differential acoustic impedance layer unit comprises a thickness in a range of from 0.13λ L to 0.19λ L .

2. The solidly mounted resonator structure of claim 1 , wherein:

the acoustic reflector structure comprises at least two sequentially arranged differential acoustic impedance layer units and at least one additional low acoustic impedance material layer.

3. The solidly mounted resonator structure of claim 1 , wherein the piezoelectric material layer comprises a hexagonal crystal structure piezoelectric material that comprises a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of the substrate.

4. The solidly mounted resonator structure of claim 1 , wherein in each differential acoustic impedance layer unit, the high acoustic impedance material layer comprises an acoustic impedance that is at least about 2.5 times greater than an acoustic impedance of the low acoustic impedance material layer.

5. The solidly mounted resonator structure of claim 1 , wherein the substrate is arranged between a backside surface and the acoustic reflector structure, and the backside surface comprises a roughened surface configured to reduce or eliminate backside acoustic reflection.

6. The solidly mounted resonator structure of claim 1 , wherein:

the at least one first electrode structure comprises a plurality of first electrode structures;

the at least one second electrode structure comprises a plurality of second electrode structures;

a first portion of the solidly mounted resonator structure comprises a first solidly mounted bulk acoustic wave resonator device including a first active region arranged between one first electrode structure of the plurality of first electrode structures and one second electrode structure of the plurality of second electrode structures; and

a second portion of the solidly mounted resonator structure comprises a second solidly mounted bulk acoustic wave resonator device including a second active region arranged between another first electrode structure of the plurality of first electrode structures and another second electrode structure of the plurality of second electrode structures.

7. A solidly mounted bulk acoustic wave resonator chip derived from the solidly mounted resonator structure of claim 6 .

8. A sensor or microfluidic device incorporating the solidly mounted bulk acoustic wave resonator chip of claim 7 .

9. A solidly mounted resonator structure comprising:

a substrate;

an acoustic reflector structure arranged over the substrate and comprising a plurality of sequentially arranged differential acoustic impedance layer units, wherein each differential acoustic impedance layer unit of the plurality of sequentially arranged differential acoustic impedance layer units comprises a low acoustic impedance material layer in contact with a high acoustic impedance material layer;

at least one first electrode structure arranged over at least a portion of the acoustic reflector structure;

a piezoelectric material layer arranged over the at least one first electrode structure; and

at least one second electrode structure arranged over at least a portion of the piezoelectric material layer;

wherein:

at least one portion of the piezoelectric material layer is arranged between the at least one first electrode structure and the at least one second electrode structure to form at least one active region;

the solidly mounted resonator structure is configured for transduction of an acoustic wave including a longitudinal component and a shear component in the at least one active region, whereby the piezoelectric material layer exhibits first and second harmonic resonances of a longitudinal response and exhibits first, second, and third harmonic resonances of a shear response; and

a frequency corresponding to a minimum transmissivity of the second harmonic resonance of the longitudinal response is substantially matched to a frequency corresponding to a minimum transmissivity of the third harmonic resonance of the shear response.

10. The solidly mounted resonator structure of claim 9 , wherein the frequency corresponding to a minimum transmissivity of the second harmonic resonance of the longitudinal response is within about 5% of the frequency corresponding to a minimum transmissivity of the third harmonic resonance of the shear response.

11. The solidly mounted resonator structure of claim 9 , wherein the acoustic reflector structure comprises first, second, and third low acoustic impedance material layers and comprises first and second high acoustic impedance material layers.

12. The solidly mounted resonator structure of claim 9 , wherein the piezoelectric material layer comprises a hexagonal crystal structure piezoelectric material that comprises a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of the substrate.

13. The solidly mounted resonator structure of claim 9 , wherein:

the acoustic wave comprises a longitudinal wavelength λ L ;

the low acoustic impedance material layer of each differential acoustic impedance layer unit comprises a thickness in a range of from 0.73λ L to 0.82λ L , and

the high acoustic impedance material layer of each differential acoustic impedance layer unit comprises a thickness in a range of from 0.13λ L to 0.19λ L .

14. The solidly mounted resonator structure of claim 9 , wherein in each differential acoustic impedance layer unit, the high acoustic impedance material layer comprises an acoustic impedance that is at least about 2.5 times greater than an acoustic impedance of the low acoustic impedance material layer.

15. The solidly mounted resonator structure of claim 9 , wherein the substrate is arranged between a backside surface and the acoustic reflector structure, and the backside surface comprises a roughened surface configured to reduce or eliminate backside acoustic reflection.

16. The solidly mounted resonator structure of claim 9 , wherein:

the at least one first electrode structure comprises a plurality of first electrode structures;

the at least one second electrode structure comprises a plurality of second electrode structures;

a first portion of the solidly mounted resonator structure comprises a first solidly mounted bulk acoustic wave resonator device including a first active region arranged between one first electrode structure of the plurality of first electrode structures and one second electrode structure of the plurality of second electrode structures; and

a second portion of the solidly mounted resonator structure comprises a second solidly mounted bulk acoustic wave resonator device including a second active region arranged between another first electrode structure of the plurality of first electrode structures and another second electrode structure of the plurality of second electrode structures.

17. A solidly mounted bulk acoustic wave resonator chip derived from the solidly mounted resonator structure of claim 16 .

18. A sensor or microfluidic device incorporating the solidly mounted bulk acoustic wave resonator chip of claim 17 .