Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
1. A gallium and nitrogen containing laser diode device, the device comprising:
a gallium and nitrogen containing material comprising a surface region, the surface region being configured on either a {10-10} crystal orientation or a crystal orientation configured with an orientation of {10-10} with an offcut at an angle toward or away from the [0001] direction;
a gallium and nitrogen containing region formed overlying the surface region;
an active region formed overlying the surface region;
a gettering region comprising a magnesium species overlying the surface region; and
a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
2. The device of claim 1 , where the crystal orientation is selected from one of a {30-3-1} plane, a {30-31} plane, a {20-2-1} plane, a {20-21} plane, a {30-3-1} plane, a {30-32} plane, or an offcut from any one of these planes within +/−5 degrees toward an a-plane or a c-plane.
3. The device of claim 1 , further comprising an electron blocking region between the gettering region and the p-type cladding region.
4. The device of claim 1 , further comprising a barrier region between the active region and the gettering region.
5. The device of claim 1 , further comprising a separate confinement heterostructure region between the active region and the gettering region, wherein the separate confinement heterostructure region is configured to confine an optical mode; the separate confinement heterostructure comprising InGaN.
6. The device of claim 1 , wherein the p-type cladding region comprises a plurality of layers, each of the plurality of layers independently selected from a GaN layer, an AlGaN layer, and an InAlGaN layer, wherein each of the plurality of layers is independently doped with a concentration of magnesium.
7. The device of claim 1 , wherein the p-type cladding region comprises a single layer.
8. The device of claim 1 , wherein the p-type region comprises multiple regions.
9. The device of claim 1 , wherein the active region comprises one or more light emitting layers, each of the one or more lighting emitting layers being configured between a pair of barrier regions, each of the one or more lighting emitting layers having a thickness ranging from 2 nm to about 8 nm; and wherein each of the one or more barrier regions has a thickness ranging from 2 nm to 20 nm or from 2 nm to 4 nm or 4 to 20 nm.
10. The device of claim 1 , further comprising a GaN barrier region and wherein the p-type cladding region is a GaN p-cladding region substantially free from an aluminum bearing species.
11. The device of claim 1 , wherein the p-type cladding region is a GaN p-cladding doped with a Mg concentration of less than 2E19 cm −3 or less than about 5E18 cm −3 .
12. The device of claim 1 , wherein the gettering region comprises:
a region intentionally doped with Mg; and
a region unintentionally doped with Mg, wherein the unintentionally doped region is configured to incorporate residual Mg before formation of the p-type region.
13. The device of claim 1 , wherein the gettering region is characterized by a thickness from 2 nm to 50 nm.
14. The device of claim 1 , wherein the device is provided in an application selected from at least one of a laser display, medical, a light, or combinations thereof.
15. A method for manufacturing a gallium and nitrogen containing laser diode device, the method comprising:
providing a gallium and nitrogen containing substrate material comprising a surface region, the surface region being configured on either a {10-10} crystal orientation or a crystal orientation configured with an orientation of {10-10} with an offcut at an angle toward or away from the [0001] direction;
forming a gallium and nitrogen containing region overlying the surface region;
forming an active region overlying the surface region;
forming a gettering region comprising a magnesium species overlying the surface region; and
forming a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species overlying the active region, wherein the p-type cladding region is formed at a higher temperature than the gettering region.
16. The method of claim 15 , wherein the crystal orientation is selected from a {40-4-1} plane, a {40-41} plane, a {30-3-1} plane, a {30-31} plane, a {20-2-1} plane, a {20-21} plane, a {30-3-1} plane, a {30-32} plane, or an offcut from any one of these planes within +/−5 degrees toward an a-plane or a c-plane.
17. The method of claim 15 , further comprising forming an electron blocking region between the gettering region and the p-type cladding region.
18. The method of claim 17 , wherein the electron blocking region and the p-type cladding region are epitaxially grown at a temperature above about 900 C.
19. The method of claim 15 , wherein the device is used in a laser display, a medical application, a light, or combinations thereof.