Vertically integrated wafers with thermal dissipation
Technologies are generally described related to three-dimensional integration of integrated circuits (ICs) with spacing for heat dissipation. According to some examples, a self-aligned silicide may be formed in a temporary silicon layer and removed subsequent to bonding of the wafers to achieve improved contact between the combined ICs and enhanced heat dissipation through added spacing between the ICs.
1. A three-dimensionally integrated semiconductor device, comprising:
a first wafer that includes a first set of semiconductor circuitry;
a second wafer that includes a second set of semiconductor circuitry;
silicide layers located between conductive coupler surfaces of the first wafer and the second wafer,
wherein the silicide layers are effective to bond the first wafer and the second wafer, and
wherein the silicide layers are effective to provide heat dissipation for the first set of semiconductor circuitry and the second set of semiconductor circuitry through gaps between the silicide layers; and
portions of an amorphous silicon layer or a porous silicon layer located between at least two of the silicide layers.
2. The semiconductor device of claim 1 , wherein the first wafer and the second wafer are arranged such that respective surfaces of the first wafer and the second wafer face each other.
3. The semiconductor device of claim 2 , wherein the first wafer and the second wafer include one or more conductive coupler surfaces on respective surfaces of the first wafer and the second wafer.
4. The semiconductor device of claim 3 , wherein:
the one or more conductive coupler surfaces include a metal, and
the metal includes one of aluminum, nickel, copper, titanium, molybdenum, tantalum, or tungsten.
5. The semiconductor device of claim 1 , wherein the portions of the amorphous silicon layer or the porous silicon layer, located between the at least two of the silicide layers, include undoped silicon.
6. A three-dimensionally integrated semiconductor device, comprising:
a first wafer that includes a first set of semiconductor circuitry;
a second wafer that includes a second set of semiconductor circuitry, wherein the second wafer is bonded to the first wafer through an amorphous silicon layer or a porous silicon layer on respective surfaces of the first wafer and the second wafer; and
silicide layers located between conductive coupler surfaces of the first wafer and the second wafer,
wherein the silicide layers are formed through heat treatment of the bonded first wafer and the second wafer, and
wherein the silicide layers are effective to provide heat dissipation for the first set of semiconductor circuitry and the second set of semiconductor circuitry through gaps between the silicide layers.
7. The semiconductor device of claim 6 , wherein the first wafer and the second wafer are arranged such that the respective surfaces of the first wafer and the second wafer face each other.
8. The semiconductor device of claim 6 , wherein the conductive coupler surfaces include one of aluminum, nickel, copper, titanium, molybdenum, tantalum, or tungsten.
9. The semiconductor device of claim 6 , wherein the silicide layers are formed through reaction of the amorphous silicon layer or the porous silicon layer with one or more of the conductive coupler surfaces under the heat treatment.
10. The semiconductor device of claim 6 , wherein portions of the amorphous silicon layer or the porous silicon layer are located between at least two of the silicide layers.
11. The semiconductor device of claim 10 , wherein the portions of the amorphous silicon layer or the porous silicon layer, located between the at least two of the silicide layers, include undoped silicon.