Mid-K LTCC compositions and devices
LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.
1. A lead-free and cadmium-free dielectric paste composition comprising a solids portion comprising:
from about 15 wt % to about 25 wt % BaO;
from about 0 wt % to about 15 wt % CaO;
from about 0 wt % to about 3 wt % SrO;
from about 0 wt % to about 6 wt % ZnO;
from about 1 wt % to about 15 wt % B 2 O 3 ;
from about 0 wt % to about 30 wt % Al 2 O 3 ;
from about 0 wt % to about 30 wt % SiO 2 ;
from about 3 wt % to about 60 wt % TiO 2 ;
from about 0 wt % to about 17 wt % Bi 2 O 3 ;
from about 0 to about 20 wt % Nd 2 O 3 ;
from about 0 to about 30 wt % Sm 2 O 3 ;
from about 0 to about 3 wt % CuO; and
from about 0 to about 3 wt % LiF.
2. A lead-free and cadmium-free dielectric paste composition comprising a solids portion comprising:
from about 5 wt % to about 40 wt % BaO;
from about 10 wt % to about 60 wt % TiO 2 ;
from about 5 wt % to about 25 wt % Bi 2 O 3 ;
from about 0.1 wt % to about 15 wt % SiO 2 ;
from about 0.1 wt % to about 15 wt % ZnO;
from about 0.1 wt % to about 15 wt % B 2 O 3 ;
from about 0.1 wt % to about 15 wt % CuO; and
from about 0.1 wt % to about 15 wt % LiF.
3. The lead-free and cadmium-free dielectric paste composition of claim 2 , comprising a solids portion comprising:
from about 15 Wt % to about 30 wt % BaO;
from about 40 wt % to about 57 wt % TiO 2 ;
from about 8 wt % to about 18 wt % Bi 2 O 3 ;
from about 0.1 wt % to about 5 wt % SiO 2 ;
from about 0.1 wt % to about 5 wt % ZnO;
from about 0.1 wt % to about 5 wt % B 2 O 3 ;
from about 0.1 wt % to about 5 wt % CuO; and
from about 0.1 wt % to about 5 wt % LiF.
4. A lead-free and cadmium-free dielectric paste composition, comprising a solids portion comprising:
from about 12 wt % to about 18 wt % BaO;
from about 0.1 wt % to about 5 wt % CaO;
from about 0.1 wt % to about 7 wt % ZnO;
from about 0.1 wt % to about 5 wt % B 2 O 3 ;
from about 30 wt % to about 40 wt % TiO 2 ;
from about 8 wt % to about 16 wt % Bi 2 O 3 ;
from about 0 wt % to about 3 wt % CUD; and
from about 0.1 wt % to about 3 wt % LiF.
5. A fired electric or electronic component comprising a lead-free and cadmium-free dielectric paste composition together with
i. a conductive paste comprising prior to firing:
a. 60-90 wt % Ag+Pd+Pt+Au,
b. 1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
c. 0.5-10 wt % of at least one glass frit,
d. 10-40 wt % of an organic portion,
ii. wherein the lead-free and cadmium-free dielectric paste composition comprises a solids portion comprising:
a. from about 0.5 wt % to about 50 wt % (BaO+CaO+SrO+MgO);
b. from about 0.1 wt % to about 60 wt % (Al 2 O 3 +B 2 O 3 );
c. from about 0.1 wt % to about 60 wt % (SiO 2 +TiO 2 +ZrO 2 );
d. from about 0 wt % to about 40 wt % Bi 2 O 3 ;
e. from about 0 wt % to about 35 wt % (Nd 2 O 3 +Gd 2 O 3 +La 2 O 3 +Sm 2 O 3 );
f. from about 0 wt % to about 10 wt % ZnO;
q. from about 0 wt % to about 10 wt % CuO; and
h. from about 0 wt % to about 8 wt % LiF.
6. The fired electric or electronic component of claim 5 ,
wherein the solids portion comprises:
a. from about 0.5 wt % to about 50 wt % (BaO+CaO+SrO+MgO);
b. from about 0.1 wt % to about 60 wt % (Al 2 O 3 +B 2 O 3 );
c. from about 0.1 wt % to about 60 wt % (SiO 2 +TiO 2 +ZrO 2 );
d. from about 0 wt % to about 40 wt % Bi 2 O 3 ;
e. from about 0 wt % to about 35 wt % (Nd 2 O 3 +Gd 2 O 3 +La 2 O 3 +Sm 2 O 3 );
f. from about 0 wt % to about 10 wt % ZnO;
g. from about 0 wt % to about 10 wt % CuO; and
h. from about 0 wt % to about 8 wt % LiF.
7. A method of producing an LTCC device comprising:
providing at least one substrate bearing a tape comprising a lead-free and cadmium free dielectric paste composition, comprising a solids portion comprising:
from about 0.5 wt % to about 50 wt % (BaO+CaO+SrO+MgO);
from about 0.1 wt % to about 60 wt % (Al 2 O 3 +B 2 O 3 );
from about 0.1 wt % to about 60 wt % (SiO 2 +TiO 2 +ZrO 2 );
from about 0 wt % to about 40 wt % Bi 2 O 3 ;
from about 0 wt % to about 35 wt % (Nd 2 O 3 +Gd 2 O 3 +La 2 O 3 +Sm 2 O 3 );
from about 0 wt % to about 10 wt % ZnO;
from about 0 wt % to about 10 wt % CuO; and
from about 0 wt % to about 8 wt % LiF;
forming at least one via in the tape,
filling the at least one via with a conductive paste comprising:
a. 60-90 wt % Ag+Pd+Pt+Au,
b. 1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
c. 0.5-10 wt % of at least one glass frit, and
d. 10-40 wt % of an organic portion, and
firing the tape and conductive paste at a temperature up to 1000° C.
8. The fired electric or electronic component of claim 5 , wherein the solids portion comprises:
from about 5 wt % to about 25 wt % (BaO+CaO+SrO+MgO),
from about 0.5 wt % to about 45 wt % (Al 2 O 3 +B 2 O 3 ),
from about 3 wt % to about 58 wt % (SiO 2 +TiO 2 +ZrO 2 ),
from about 1 wt % to about 30 wt % Bi 2 O 3 ,
from about 0 wt % to about 30 wt % (Nd 2 O 3 +Gd 2 O 3 +La 2 O 3 +Sm 2 O 3 ),
from about 0.1 wt % to about 10 wt % ZnO,
from about 0.1 wt % to about 10 wt % CuO, and
from about 0.1 wt % to about 5 wt % LiF.
9. The fired electric or electronic component of claim 5 , wherein the solids portion comprises:
from about 14 wt % to about 25 wt % (BaO+CaO+SrO+MgO),
from about 1 wt % to about 43 wt % (Al 2 O 3 +B 2 O 3 ),
from about 21 wt % to about 58 wt % (SiO 2 +TiO 2 +ZrO 2 ),
from about 8 wt % to about 20 wt % Bi 2 O 3 ,
from about 0.1 wt % to about 20 wt % (Nd 2 O 3 +Gd 2 O 3 +La 2 O 3 +Sm 2 O 3 ),
from about 0.1 wt % to about 5 wt % ZnO,
from about 0.1 wt % to about 5 wt % CuO, and
from about 0.1 wt % to about 3 wt % LiF.
10. A fired electric or electronic component comprising a lead-free and cadmium-free dielectric paste composition together with a conductive paste comprising prior to firing:
a. 60-90 wt % Ag+Pd+Pt+Au,
b. 1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
c. 0.5-10 wt % of at least one glass frit,
d. 10-40 wt % of an organic portion,
wherein the lead-free and cadmium-free dielectric paste composition comprises a solids portion, comprising:
a. from about 5 wt % to about 50 wt % (BaO+CaO+SrO+MgO),
b. from about 0.1 wt % to about 50 wt % (Al 2 O 3 +B 2 O 3 ),
c. from about 0.1 wt % to about 50 wt % (SiO 2 +TiO 2 +ZrO 2 ), and
d. from about 0.1-40 wt % Bi 2 O 3 .
11. The fired electric or electronic component of claim 10 , wherein the solids portion further comprises at least one selected from the group consisting of:
e. from about 0.1 wt % to about 10 wt % ZnO,
f. from about 0.1 wt % to about 30 wt % (Nd 2 O 3 +Gd 2 O 3 +La 2 O 3 +Sm 2 O 3 ),
g. from about 0.1 wt % to about 10 wt % CuO, and
h. from about 0.1 wt % to about 10 wt % LiF.
12. A fired electric or electronic component comprising a lead-free and cadmium-free dielectric paste composition together with a conductive paste comprising prior to firing:
a. 60-90 wt % Ag+Pd+Pt+Au,
b. 1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
c. 0.5-10 wt % of at least one glass frit,
d. 10-40 wt % of an organic portion,
wherein the lead-free and cadmium-free dielectric paste composition comprises a solids portion, comprising:
a. from about 0.5 wt % to about 50 wt % BaO,
b. from about 0 wt % to about 40 wt % CaO,
c. from about 0 wt % to about 10 wt % SrO,
d. from about 0 wt % to about 10 wt % ZnO,
e. from about 0.1 wt % to about 20 wt % B 2 O 3 ,
f. from about 0 wt % to about 40 wt % Al 2 O 3 ,
g. from about 0 wt % to about 40 wt % SiO 2 ,
h. from about 1 wt % to about 70 wt % TiO 2 ,
i. from about 0 wt % to about 30 wt % Bi 2 O 3 ,
j. from about 0 to about 30 wt % Nd 2 O 3 ,
k. from about 0 to about 40 wt % Sm 2 O 3 ,
l. from about 0 to about 10 wt % CuO, and
m. from about 0 to about 10 wt % LiF.
13. The fired electric or electronic component of claim 12 , wherein the solids portion comprises:
a. from about 5 wt % to about 25 wt % BaO,
b. from about 0 wt % to about 20 wt % CaO,
c. from about 0 wt % to about 5 wt % SrO,
d. from about 0 wt % to about 7 wt % ZnO,
e. from about 0.5 wt % to about 25 wt % B 2 O 3 ,
f. from about 0 wt % to about 35 wt % Al 2 O 3 ,
g. from about 1 wt % to about 35 wt % SiO 2 ,
h. from about 2 wt % to about 65 wt % TiO 2 ,
i. from about 0 wt % to about 20 wt % Bi 2 O 3 ,
j. from about 0 to about 25 wt % Nd 2 O 3 ,
k. from about 0 to about 35 wt % Sm 2 O 3 ,
l. from about 0 to about 5 wt % CuO, and
m. from about 0 to about 5 wt % LiF.
14. A fired electric or electronic component comprising a lead-free and cadmium-free dielectric paste composition together with a conductive paste comprising prior to firing:
a. 60-90 wt % Ag+Pd+Pt+Au,
b. 1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
c. 0.5-10 wt % of at least one glass frit,
d. 10-40 wt % of an organic portion,
wherein the lead-free and cadmium-free dielectric paste composition comprises a solids portion, comprising:
a. from about 0.5 wt % to about 50 wt % BaO,
b. from about 0.5 wt % to about 60 wt % TiO 2 ,
c. from about 0.1 wt % to about 40 wt % Bi 2 O 3 ,
d. from about 0 wt % to about 30 wt % SiO 2 ,
e. from about 0 wt % to about 30 wt % ZnO,
f. from about 0.1 wt % to about 40 wt % B 2 O 3 ,
g. from about 0.1 wt % to about 30 wt % CuO, and
h. from about 0.1 wt % to about 30 wt % LiF.
15. A method of producing an LTCC device comprising:
providing at least one substrate bearing a tape comprising a lead-free and cadmium-free dielectric paste composition, comprising a solids portion comprising:
a. from about 0.5 wt % to about 50 wt % (BaO+CaO+SrO+MgO),
b. from about 0.1 wt % to about 60 wt % (Al 2 O 3 +B 2 O 3 ),
c. from about 0.1 wt % to about 60 wt % (SiO 2 +TiO 2 +ZrO 2 ),
d. from about 0 wt % to about 40 wt % Bi 2 O 3 ,
e. from about 0 wt % to about 35 wt % (Nd 2 O 3 +Gd 2 O 3 +La 2 O 3 +Sm 2 O 3 ),
f. from about 0 wt % to about 10 wt % ZnO,
g. from about 0 wt % to about 10 wt % CuO, and
h. from about 0 wt % to about 8 wt % LiF,
forming at least one via in the tape,
filling the at least one via with a conductive paste comprising:
a. 60-90 wt % Ag+Pd+Pt+Au,
b. 1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
c. 0.5-10 wt % of at least one glass frit, and
d. 10-40 wt % of an organic portion, and
firing the tape and conductive paste at a temperature up to 1000° C.
16. The method of claim 15 , wherein the solids portion comprises:
a. from about 5 wt % to about 25 wt % (BaO+CaO+SrO+MgO),
b. from about 0.5 wt % to about 45 wt % (Al 2 O 3 +B 2 O 3 ),
c. from about 3 wt % to about 58 wt % (SiO 2 +TiO 2 +ZrO 2 ),
d. from about 1 wt % to about 30 wt % Bi 2 O 3 ,
e. from about 0 wt % to about 30 wt % (Nd 2 O 3 +Gd 2 O 3 +La 2 O 3 +Sm 2 O 3 ),
f. from about 0.1 wt % to about 10 Wt % ZnO,
g. from about 0.1 wt % to about 10 wt % CuO, and
h. from about 0.1 wt % to about 5 wt % LiF.
17. The method of claim 15 , wherein the solids portion comprises:
a. from about 14 wt % to about 25 wt % (BaO+CaO+SrO+MgO),
b. from about 1 wt % to about 43 wt % (Al 2 O 3 +B 2 O 3 ),
c. from about 21 wt % to about 58 wt % (SiO 2 +TiO 2 +ZrO 2 ),
d. from about 8 wt % to about 20 wt % Bi 2 O 3 ,
e. from about 0.1 wt % to about 20 wt % (Nd 2 O 3 +Gd 2 O 3 +La 2 O 3 +Sm 2 O 3 ),
f. from about 0.1 wt % to about 5 wt % ZnO,
g. from about 0.1 wt % to about 5 wt % CuO, and
h. from about 0.1 wt % to about 3 wt % LiF.
18. The method of claim 15 , wherein the solids portion comprises:
a. from about 10 wt % to about 28 wt % (BaO+CaO+SrO+MgO),
b. from about 1 wt % to about 13 wt % (Al 2 O 3 +B 2 O 3 ),
c. from about 22 wt % to about 58 wt % (SiO 2 +TiO 2 +ZrO 2 )
d. from about 9 wt % to about 19 wt % Bi 2 O 3 ,
e. from about 0 wt % to about 28 wt % (Nd 2 O 3 +Gd 2 O 3 +La 2 O 3 +Sm 2 O 3 ),
f. from about 1 wt % to about 5 wt % ZnO,
g. from about 0.1 wt % to about 3 wt % CuO, and
h. from about 0.5 wt % to about 3 wt % LiF.
19. The method of claim 15 , wherein the solids portion comprises:
a. from about 0.5 wt % to about 50 wt % BaO,
b. from about 0 wt % to about 40 wt % CaO,
c. from about 0 wt % to about 10 wt % SrO,
d. from about 0 wt % to about 10 wt % ZnO,
e. from about 0.1 wt % to about 20 wt % B 2 O 3 ,
f. from about 0 wt % to about 40 wt % Al 2 O 3 ,
g. from about 0 wt % to about 40 wt % SiO 2 ,
h. from about 1 wt % to about 70 wt % TiO 2 ,
i. from about 0 wt % to about 30 wt % Bi 2 O 3 ,
j. from about 0 to about 30 wt % Nd 2 O 3 ,
k. from about 0 to about 40 wt % Sm 2 O 3 ,
l. from about 0 to about 10 wt % CuO, and
m. from about 0 to about 10 wt % LiF.
20. The method of claim 15 , wherein the solids portion comprises:
a. from about 5 wt % to about 25 wt % BaO,
b. from about 0 wt % to about 20 wt % CaO,
c. from about 0 wt % to about 5 wt % SrO,
d. from about 0 wt % to about 7 wt % ZnO,
e. from about 0.5 wt % to about 25 wt % B 2 O 3 ,
f. from about 0 wt % to about 35 wt % Al 2 O 3 ,
g. from about 1 wt % to about 35 wt % SiO 2 ,
h. from about 2 wt % to about 65 wt % TiO 2 ,
i. from about 0 wt % to about 20 wt % Bi 2 O 3 ,
j. from about 0 to about 25 wt % Nd 2 O 3 ,
k. from about 0 to about 35 wt % Sm 2 O 3 ,
l. from about 0 to about 5 wt % CuO, and
m. from about 0 to about 5 wt % LiF.