Semiconductor chip for protecting against electrostatic discharges
A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.
1. An optoelectronic device comprising:
a semiconductor body with a first main surface and a second main surface arranged opposite the first main surface, wherein the semiconductor body comprises a p-doped sub-region, which forms a part of the first main surface, and an n-doped sub-region, which forms a part of the second main surface;
a metallic contact element extending from the first main surface to the second main surface, wherein the n-doped sub-region electrically isolates the p-doped sub-region from the metallic contact element; and
a package body laterally surrounding the semiconductor body and having a first surface and a second surface,
wherein the package body comprises a plastics material, a silicone, an epoxide, a silicone-epoxide hybrid material, a polyester, a low-melting glass or a low-melting glass-ceramic,
wherein the first main surface of the of the semiconductor body is coplanar with the first surface of the package body and the second main surface of the semiconductor body is coplanar with the second surface of the package body, and
wherein the metallic contact element is in direct contact with the package body.
2. The optoelectronic device according to claim 1 , wherein the p-doped sub-region extends from the first main surface to the second main surface.
3. The optoelectronic device according to claim 1 , wherein the p-doped sub-region forms also a part of the second main surface.
4. The optoelectronic device according to claim 1 , wherein a part of the p-doped sub-region is sandwiched between the n-doped sub-region in a direction from the first main surface to the second main surface.
5. The optoelectronic device according to claim 1 , wherein the semiconductor body has exactly one p-doped sub-region and exactly one n-doped sub-region.
6. The optoelectronic device according to claim 1 , further comprising:
a first electrical connecting element arranged on the first main surface of the semiconductor body;
a second electrical connecting element arranged on the first main surface of the semiconductor body, the first electrical connecting element spaced apart from the second electrical connecting element; and
a third electrical connecting element arranged on the second main surface of the semiconductor body.
7. The optoelectronic device according to claim 6 , further comprising an insulating layer arranged on the second main surface of the semiconductor body such that the insulating layer insulates the p-doped sub-region from the third electrical connecting element.
8. The optoelectronic device according to claim 7 , wherein the first electrical connecting element is electrically connected to the p-doped sub-region, wherein the second electrical connecting element is electrically connected to the n-doped sub-region, wherein the third electrical connecting element is electrically connected to the n-doped sub-region, and wherein the metallic contact element electrically connects the second electrical connecting element with the third electrical connecting element.
9. The optoelectronic device according to claim 1 , wherein the optoelectronic device is configured to protect against electrostatic discharge.
10. The optoelectronic device according to claim 1 , wherein the n-doped sub-region is extended at the first and second main surfaces in a direction orthogonal to a direction from the first main surface to the second main surface.
11. An optoelectronic device comprising:
a semiconductor chip comprising:
a semiconductor body with a first main surface, a second main surface arranged opposite the first main surface and side surfaces forming a 3 -dimensional outer shape of the semiconductor body, wherein the semiconductor body comprises a p-doped sub-region, which forms a part of the first main surface, and an n-doped sub-region, which forms a part of the second main surface; and
a metallic contact element extending from the first main surface to the second main surface, wherein the n-doped sub-region electrically isolates the p-doped sub-region from the metallic contact element, and wherein the metallic contact element is arranged on a side surface of the side surfaces of the semiconductor body connecting the first and second main surfaces;
a package body laterally surrounding the semiconductor chip and having a first surface and a second surface, wherein the package body comprises a plastics material, a silicone, an epoxide, a silicone-epoxide hybrid material, a polyester, a low-melting glass or a low-melting glass-ceramic, wherein the first surface of the of the semiconductor body is coplanar with the first surface of the package body and the second main surface of the semiconductor body is coplanar with the second surface of the package body, and wherein the metallic contact element is in direct contact with the package body;
a first electrical connecting element arranged on the first main surface of the semiconductor chip;
a second electrical connecting element arranged on the first main surface of the semiconductor chip, the first electrical connecting element spaced apart from the second electrical connecting element; and
a third electrical connecting element arranged on the second main surface of the semiconductor chip,
wherein the semiconductor chip is configured to protect against electrostatic discharge.
12. A optoelectronic device comprising:
a semiconductor body with a first main surface, a second main surface arranged opposite the first main surface and side main surfaces forming a 3-dimensional outer shape of the semiconductor body, wherein the semiconductor body comprises a p-doped sub-region, which forms a part of the first main surface, and an n-doped sub-region, which forms a part of the second main surface;
a metallic contact element extending from the first main surface to the second main surface, wherein the n-doped sub-region electrically isolates the p-doped sub-region from the metallic contact element; and
a package body laterally surrounding the semiconductor body and having a first surface and a second surface, wherein the package body comprises a plastics material, a silicone, an epoxide, a silicone-epoxide hybrid material, a polyester, a low-melting glass or a low-melting glass-ceramic, wherein the first main surface of the of the semiconductor body is coplanar with the first surface of the package body and the second main surface of the semiconductor body is coplanar with the second surface of the package body, wherein the metallic contact element is in direct contact with the package body, and
wherein the metallic contact element is arranged on a side face of the side surfaces of the semiconductor body connecting the first and second main surfaces.