Quantum dots with reduced saturation quenching
The invention provides a lighting device comprising (a) a light converter comprising a light receiving face; and (b) a solid state light source configured to generate a light source light with a photon flux of at least 10 W/cm 2 at the light receiving face, wherein the light converter is configured to convert at least part of the light source light into light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase the photon density of states in the light converter resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.
1. A lighting device comprising:
a) a light converter comprising a light receiving face;
b) a solid state light source configured to generate a light source light with a photon flux of at least 10 W/cm 2 at the light receiving face,
wherein the light converter is configured to convert at least part of the light source light into a light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase a photon density of states in the light converter and be resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.
2. The lighting device-according to claim 1 , wherein the light converter comprises a plurality of quantum dots in the optical structure, wherein the optical structure comprises said plasmonic structure, and wherein the plasmonic structure is an irregular plasmonic structure.
3. The lighting device-according to claim 1 , wherein the light converter comprises a plurality of quantum dots in the optical structure, wherein the optical structure comprises said plasmonic structure, and wherein the plasmonic structure is a regular plasmonic structure.
4. The lighting device-according to claim 1 , wherein the light converter comprises a polycrystalline photonic crystal structure comprising a plurality of quantum dots.
5. The lighting device-according to claim 1 , wherein a core of the quantum dot has a shortest distance to a metallic structure comprised by the optical structure of at least 5 nm.
6. The lighting device-according to claim 1 , wherein the quantum dot comprises a silica coating or wherein the optical structure comprises a silica structure comprising quantum dots.
7. The lighting device-according to claim 1 , wherein the light converter comprises a plurality of different semiconductor quantum dots configured to convert at least part of the light source light into the light converter light having a distribution of first frequencies.
8. The lighting device-according to claim 7 , further comprising a plurality of optical structure domains, wherein the optical structure domains are configured to increase the photon density of states in the vicinity of one or more quantum dots—and be resonant with the first frequency of said one or more quantum dots.
9. The lighting device-according to claim 1 , wherein the quantum dot has a quantum efficiency of at least 90% and wherein the quantum dot has in the light converter a radiative decay time of 4 ns or less.