Memristor and method of production thereof
A device is disclosed which comprises a first electrode ( 101 ), a second electrode ( 104 ) spaced from the first electrode, a switching region ( 102 ) positioned between the first electrode and the second electrode, and an intermediate region ( 103 ) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires ( 105 ) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material ( 106 ) and an insulating material ( 107 ).
1. A device, comprising:
a first electrode;
a second electrode spaced from the first electrode;
a switching region positioned between the first electrode and the second electrode, the switching region comprising one or more materials; and
an intermediate region positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode;
wherein the switching region comprises a conductive material and an insulating material, wherein the insulating material is in physical contact with the intermediate region and is positioned between the conductive material comprised by the switching region and the intermediate region, and wherein the device is a variable capacitance device.
2. The device of claim 1 , wherein the device is a memristor.
3. The device of claim 1 , wherein the switching region is in electrical contact with the first electrode via physical contact with the first electrode, and in electrical contact with the second electrode via physical contact with the intermediate region.
4. The device of claim 1 , wherein the switching region has a thickness between 10 and 1000 nanometers.
5. The device of claim 1 , wherein the intermediate region comprises: metal nanowires, polymers or a combination thereof.
6. The device of claim 1 , wherein the intermediate region is in electrical contact with the second electrode and with the switching region via one or more electrical contact points.
7. The device of claim 1 , wherein the elements of the device are arranged to form a vertical stack.
8. The device of claim 1 , wherein the insulating material comprises a material selected from the group of: insulating transition metal dichalcogenides, transition metal oxides and graphene-like materials.
9. The device of claim 1 , wherein the conductive material comprises a material selected from the group of: conductive transition metal dichalcogenides, transition metal oxides and graphene-like materials.
10. The device of claim 1 , wherein the switching region is partially oxidized, and wherein the oxidized part of the switching region comprises the insulating material, and the remaining part of the switching region comprises the conductive material.
11. The device of claim 10 , wherein the oxidized part of the switching region is at least partially in physical contact with the intermediate region.
12. The device of claim 1 , wherein the intermediate region comprises nanowires embedded in an organic material.
13. The device of claim 12 , wherein the intermediate region is in electrical contact with the second electrode and with the insulating material of the switching region via one or more electrical contact points.
14. A method of fabricating a variable capacitance device, comprising:
providing a first electrode;
depositing on the first electrode a switching region comprising one or more materials;
depositing on the switching region an intermediate region comprising at least one of metal nanowires or polymers; and
depositing on the intermediate region a second electrode;
wherein depositing the switching region comprises depositing on the first electrode a conductive material and depositing on the conductive material an insulating material, wherein the insulating material is deposited such that the insulating material is in physical contact with the intermediate region and is positioned between the conductive material comprised by the switching region and the intermediate region.
15. The method of claim 14 , further comprising providing a substrate, wherein the first electrode is provided by depositing said first electrode on the substrate.
16. The method of claim 14 , wherein the intermediate region comprising metal nanowires and/or polymers is deposited on the switching region by at least one of dispensing, drop-casting, screen printing, offset printing, gravure printing, flexography, or inkjet printing.
17. The method of claim 14 , wherein the first and second electrodes are deposited by at least one of the following deposition techniques: sputtering, chemical vapor deposition (CVD), physical vapor deposition (PVD) and printing.
18. An apparatus for forming a variable capacitance device, the apparatus, comprising:
at least one processor; and
at least one memory coupled to the at least one processor, the at least one memory comprising program code instructions which, when executed by the at least one processor, cause the apparatus to:
provide a first electrode;
deposit on the first electrode a switching region comprising one or more materials;
deposit on the switching region an intermediate region comprising metal nanowires and/or polymers; and
deposit on the intermediate region a second electrode in order to form a variable capacitance device;
wherein depositing the switching region comprises depositing on the first electrode a conductive material and depositing on the conductive material an insulating material, wherein the insulating material is deposited such that the insulating material is in physical contact with the intermediate region and is positioned between the conductive material comprised by the switching region and the intermediate region.