Thin-film transistor device and display device using same
A display device including: a lead wiring layer pattern 207 , made from metal, that extends outside a region 10 A on a substrate in which a light-emitter is present; a passivation layer 216 ; a contact hole 216 a in the passivation layer 216 outside the region 10 A in a position over the lead wiring layer pattern 207 in plan view; a connecting wiring layer pattern 237 that is continuous across the passivation layer 216 , an inner circumference of the contact hole 216 a , and the lead wiring layer pattern 207 in the contact hole 216 a ; a sealing layer 217 covering a portion of the connecting wiring layer pattern 237 in the contact hole 216 a ; and an upper sealing layer pattern 219 covering the sealing layer pattern 217 that is above the connecting wiring layer pattern 237.
1. A display device comprising:
a substrate;
a light-emitter disposed on the substrate;
a transistor that drives the light-emitter;
a lead wiring layer pattern, made from metal, that extends from a source, drain, or gate of the transistor to an outer region outside a region in which the light-emitter is present;
a passivation layer in which a contact hole is opened, the passivation layer being disposed covering the lead wiring layer pattern, the contact hole, in plan view, being superimposed over the lead wiring layer pattern in the outer region;
a connecting wiring layer pattern that is continuous across the passivation layer, an inner circumference of the contact hole, and the lead wiring layer pattern in the contact hole;
a lower sealing layer pattern disposed on the connecting wiring layer pattern, covering a portion of the connecting wiring layer pattern in the contact hole; and
an upper sealing layer pattern disposed above the connecting wiring layer pattern, covering the lower sealing layer pattern, wherein
the upper sealing layer directly contacts the connecting wire pattern.
2. The display device of claim 1 , further comprising:
a connecting terminal portion for connecting a portion of the connecting wiring layer pattern on the passivation layer to wiring.
3. The display device of claim 2 , wherein
the lower sealing layer pattern and the upper sealing layer pattern are electrically conductive, and
the upper sealing layer pattern, above the passivation layer, extends along the connecting wiring layer pattern to the connecting terminal portion or near the connecting terminal portion.
4. The display device of claim 2 , wherein
the connecting wiring layer pattern extends to a periphery or near the periphery of the substrate, and
the connecting terminal portion is disposed where the connecting wiring layer pattern terminates at the periphery or near the periphery of the substrate.
5. The display device of claim 1 , wherein
the lower sealing layer pattern fills the contact hole and an upper portion of the lower sealing layer pattern protrudes from the contact hole.
6. The display device of claim 1 , wherein
in the passivation layer, in a plan view, a plurality of the contact holes is superimposed over the lead wiring layer pattern, and a plurality of the lower sealing layer patterns is disposed therein, the lower sealing layer patterns being separate from each other.
7. The display device of claim 1 , wherein
in the passivation layer, in a plan view, a plurality of the contact holes is superimposed over the lead wiring layer pattern, and the lower sealing layer pattern is continuous across the plurality of contact holes.
8. The display device of claim 1 , wherein
the lead wiring layer pattern is a layered metal body of layers including a layer including copper or the lead wiring layer pattern is an alloy layer including copper.
9. The display device of claim 1 , wherein
the lower sealing layer pattern is a layered metal body of layers including a layer including copper or the lower sealing layer pattern is an alloy layer including copper.
10. The display device of claim 1 , wherein
the upper sealing layer pattern is a layered metal body consisting of a thin film made from tungsten and a thin film made from aluminum or aluminum alloy.
11. A thin-film transistor device comprising:
a substrate;
a transistor that drives a light-emitter disposed on the substrate;
a lead wiring layer pattern, made from metal, that extends from a source, drain, or gate of the transistor to an outer region outside a region in which the light-emitter is present;
a passivation layer in which a contact hole is opened, the passivation layer being disposed covering at least the lead wiring layer pattern, the contact hole, in plan view, being superimposed over the lead wiring layer pattern in the outer region;
a connecting wiring layer pattern that is continuous across the passivation layer, an inner circumference of the contact hole, and the lead wiring layer pattern in the contact hole;
a lower sealing layer pattern disposed on the connecting wiring layer pattern, covering a portion of the connecting wiring layer pattern in the contact hole; and
an upper sealing layer pattern disposed above the connecting wiring layer pattern, covering the lower sealing layer pattern, wherein
the upper sealing layer directly contacts the connecting wire pattern, and
a connecting terminal portion for connecting a portion of the connecting wiring layer pattern on the passivation layer to wiring outside the region.
12. The thin-film transistor device of claim 11 , wherein
the lower sealing layer pattern and the upper sealing layer pattern are electrically conductive, and
the upper sealing layer pattern, above the passivation layer, extends along the connecting wiring layer pattern to the connecting terminal portion or near the connecting terminal portion.
13. The thin-film transistor device of claim 12 , wherein
the connecting wiring layer pattern extends to a periphery or near the periphery of the substrate, and
the connecting terminal portion is disposed where the connecting wiring layer pattern terminates at the periphery or near the periphery of the substrate.
14. The thin-film transistor device of claim 11 , wherein
the lower sealing layer pattern fills the contact hole and an upper portion of the lower sealing layer pattern protrudes from the contact hole.
15. The thin-film transistor device of claim 11 , wherein
in the passivation layer, in a plan view, a plurality of the contact holes is superimposed over the lead wiring layer pattern, and a plurality of the lower sealing layer patterns is disposed therein, the lower sealing layer patterns being separate from each other.
16. The thin-film transistor device of claim 11 , wherein
in the passivation layer, in a plan view, a plurality of the contact holes is superimposed over the lead wiring layer pattern, and the lower sealing layer pattern is continuous across the plurality of the contact holes.
17. The thin-film transistor device of claim 11 , wherein
the lead wiring layer pattern is a layered metal body of layers including a layer including copper or the lead wiring layer pattern is an alloy layer including copper.
18. The thin-film transistor device of claim 11 , wherein
the lower sealing layer pattern is a layered metal body of layers including a layer including copper or the lower sealing layer pattern is an alloy layer including copper.
19. The thin-film transistor device of claim 11 , wherein
the upper sealing layer pattern is a layered metal body consisting of a thin film made from tungsten and a thin film made from aluminum or aluminum alloy.