Semiconductor device

1. A semiconductor device comprising:

a semiconductor substrate; a gate insulating film; a gate electrode; a front surface electrode; a temperature sensor; a front surface insulating film; and a thermal conductor,

wherein

the semiconductor substrate comprises:

a plurality of n-type first regions exposed on a front surface of the semiconductor substrate;

a p-type body region in contact with the first regions and exposed on the front surface; and

an n-type second region in contact with the body region and separated from the first regions by the body region,

the gate insulating film is in contact with the body region,

the gate electrode faces the body region positioned between the first regions and the second region via the gate insulating film,

the semiconductor substrate comprises an active region overlapping with the first regions and a region positioned between the respective first regions, and a non-active region positioned outside of the active region in a plan view of the front surface,

the front surface electrode is provided on the front surface in the active region and connected to the first regions and the body region,

the temperature sensor is disposed above the front surface in the non-active region,

the front surface insulating film is provided on the front surface in the non-active region and on the front surface electrode, and extends from the non-active region into the active region, at least a part of the front surface insulating film above the front surface electrode comprising an aperture,

the thermal conductor is connected to the front surface electrode inside the aperture,

the front surface electrode comprises a first side positioned closer to the temperature sensor and a second side positioned on an opposite side to the first side in the plan view of the front surface electrode,

the front surface insulating film on the front surface electrode within the active region comprises:

a first portion extending along the first side and having a first width in a direction from the non-active region toward the active region; and

a second portion extending along the second side and having a second width in the direction from the non-active region toward the active region, and

the first width is wider than the second width.

2. The semiconductor device as in claim 1 , wherein

the semiconductor substrate comprises a p-type voltage resistant region provided in the non-active region and extending from the front surface to a position deeper than the body region,

the body region is provided between the voltage resistant region and the first regions,

the front surface electrode extends from the active region to a position in contact with a front surface of the voltage resistant region, and is connected with the voltage resistant region,

a portion of the front surface electrode that is provided within the non-active region comprises:

a third portion extending along the first side and having a third width in the direction from the non-active region toward the active region; and

a fourth portion extending along the second side and having a fourth width in the direction from the non-active region toward the active region,

the fourth width is wider than the third width,

a portion of the voltage resistant region that is provided below the front surface electrode comprises:

a fifth portion extending along the first side and having a fifth width in the direction from the non-active region toward the active region; and

a sixth portion extending along the second side and having a sixth width in the direction from the non-active region toward the active region, and the sixth width is wider than the fifth width.