Thin-film transistor substrate and method of manufacturing the same
A method of manufacturing a TFT substrate includes the steps of forming an oxide semiconductor layer above a substrate, forming a first oxide film on the oxide semiconductor layer, performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film, and forming a second oxide film on the first oxide film after the oxidation processing.
1. A thin-film transistor substrate manufactured by a method comprising:
forming an oxide semiconductor layer above a substrate;
forming a first oxide film on the oxide semiconductor layer;
performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film, wherein a duration of the oxidation processing increases with a film deposition temperature of the first oxide film; and
forming a second oxide film on the first oxide film after the oxidation processing,
wherein in concentration profiles of elements in a direction of lamination,
a concentration profile of fluorine elements shows a peak in proximity to a boundary between the first oxide film and the second oxide film,
a concentration profile of nitric oxide shows that a concentration in proximity to the boundary is higher than a concentration in proximity to a center of the second oxide film, and
a concentration profile of hydrogen elements discontinuously changes in proximity to the boundary.
2. The thin-film transistor substrate according to claim 1 ,
wherein a film deposition temperature of the first oxide film is 270° C. or higher.
3. The thin-film transistor substrate according to claim 2 ,
wherein a duration of the oxidation processing increases with a film thickness of the first oxide film.
4. The thin-film transistor substrate according to claim 1 ,
wherein a duration of the oxidation processing increases with a film thickness of the first oxide film.
5. The thin-film transistor substrate according to claim 1 ,
wherein the first oxide film has a film thickness that is greater than or equal to 5 nm and less than or equal to 40 nm.
6. The thin-film transistor substrate according to claim 1 ,
wherein a duration of the oxidation processing increases with a film deposition temperature of the second oxide film.
7. The thin-film transistor substrate according to claim 1 ,
wherein the oxidation processing includes plasma treatment.
8. The thin-film transistor substrate according to claim 7 ,
wherein the plasma treatment is performed using a nitrous oxide gas for a period of time that is greater than or equal to 5 seconds and less than or equal to 300 seconds.
9. The thin-film transistor substrate according to claim 1 ,
wherein the first oxide film and the second oxide film are silicon oxide films.
10. The thin-film transistor substrate according to claim 1 ,
wherein the oxide semiconductor layer is a transparent amorphous oxide semiconductor.
11. The thin-film transistor substrate according to claim 1 ,
wherein the oxide semiconductor layer is InGaZnO.
12. A thin-film transistor substrate comprising:
a substrate;
an oxide semiconductor layer;
a first oxide film; and
a second oxide film,
the oxide semiconductor layer, the first oxide film, and the second oxide film being sequentially laminated above the substrate,
wherein in concentration profiles of elements in a direction of lamination,
a concentration profile of fluorine elements shows a peak in proximity to a boundary between the first oxide film and the second oxide film,
a concentration profile of nitric oxide shows that a concentration in proximity to the boundary is higher than a concentration in proximity to a center of the second oxide film, and
a concentration profile of hydrogen elements discontinuously changes in proximity to the boundary.
13. A thin-film transistor substrate manufactured by a method comprising:
forming an oxide semiconductor layer above a substrate;
forming a first oxide film on the oxide semiconductor layer;
performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film; and
forming a second oxide film on the first oxide film after the oxidation processing, wherein a film deposition temperature of the second oxide film is the same as a temperature during the oxidation processing,
wherein in concentration profiles of elements in a direction of lamination,
a concentration profile of fluorine elements shows a peak in proximity to a boundary between the first oxide film and the second oxide film,
a concentration profile of nitric oxide shows that a concentration in proximity to the boundary is higher than a concentration in proximity to a center of the second oxide film, and
a concentration profile of hydrogen elements discontinuously changes in proximity to the boundary.
14. The thin-film transistor substrate according to claim 13 ,
wherein the oxidation processing includes plasma treatment.
15. The thin-film transistor substrate according to claim 14 ,
wherein the plasma treatment is performed using a nitrous oxide gas for a period of time that is greater than or equal to 5 seconds and less than or equal to 300 seconds.
16. The thin-film transistor substrate according to claim 13 ,
wherein the first oxide film and the second oxide film are silicon oxide films.
17. The thin-film transistor substrate according to claim 13 ,
wherein the oxide semiconductor layer is a transparent amorphous oxide semiconductor.
18. The thin-film transistor substrate according to claim 13 ,
wherein the oxide semiconductor layer is InGaZnO.