High-K LTCC dielectric compositions and devices
Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-strontium-titanium-tungsten-silicon oxide.
1. A composition comprising a mixture that, upon firing, forms a dielectric material comprising:
from about 20.0 wt % to about 45.0 wt % BaO;
from about 10.0 wt % to about 38.0 wt % SrO;
from about 21.0 wt % to about 47.0 wt % TiO 2 ;
from about 0.1 wt % to about 25.0 wt % WO 3 ; and
from about 0.01 wt % to about 9.0 wt % SiO 2 .
2. The composition according to claim 1 , wherein the dielectric material further comprises at least one selected from the group consisting of:
from about 0.1 to about 15.0 wt % ZnO;
from about 0.1 to about 4.0 wt % B 2 O 3 ;
from about 0.01 to about 2.0 wt % LiF;
from about 0.01 to about 2.0 wt % CuO; and
from about 0.01 to about 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.
3. The composition according to claim 2 , wherein the dielectric material comprises:
from about 20.0 wt % to about 45.0 wt % BaO;
from about 10.0 wt % to about 38.0 wt % SrO;
from about 21.0 wt % to about 47.0 wt % TiO 2 ;
from about 0.1 wt % to about 25.0 wt % WO 3 ;
from about 0.01 wt % to about 9.0 wt % SiO 2 ;
from about 0.1 to about 15.0 wt % ZnO;
from about 0.1 to about 4.0 wt % B 2 O 3 ;
from about 0.01 to about 2.0 wt % LiF;
from about 0.01 to about 2.0 wt % CuO; and
from about 0.01 to about 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.
4. A method of forming an electronic component comprising:
applying the composition of claim 3 to a substrate; and firing the substrate at a temperature sufficient to sinter the composition.
5. The method of claim 4 , wherein the firing is conducted at a temperature of from about 800° C. to about 1000° C.
6. An electric or electronic component comprising, prior to firing, the composition of claim 2 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
0.5-10 wt % of at least one glass frit, and
10-40 wt % of an organic portion.
7. A method of forming an electronic component comprising:
applying the composition of claim 2 to a substrate; and firing the substrate at a temperature sufficient to sinter the composition.
8. The method of claim 7 , wherein the firing is conducted at a temperature of from about 800° C. to about 1000° C.
9. An electric or electronic component comprising, prior to firing, the dielectric paste of claim 3 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
0.5-10 wt % of at least one glass frit, and
10-40 wt % of an organic portion.
10. A method of forming an electronic component comprising:
applying the composition of claim 1 to a substrate; and firing the substrate at a temperature sufficient to sinter the composition.
11. The method of claim 10 , wherein the firing is conducted at a temperature of from about 800° C. to about 1000° C.
12. The composition according to claim 1 , wherein the mixture comprises at least one selected from the group consisting of:
from about 0.1 to about 17.0 wt % BaCO 3 ;
from about 0.1 to about 15.0 wt % ZnO;
from about 0.1 to about 6.0 wt % H 3 BO 3 ;
from about 0.01 to about 2.0 wt % LiF;
from about 0.01 to about 2.0 wt % CuO; and
from about 0.01 to about 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.
13. The composition according to claim 12 , comprising:
from about 20.0 wt % to about 45.0 wt % BaO;
from about 10.0 wt % to about 38.0 wt % SrO;
from about 21.0 wt % to about 47.0 wt % TiO 2 ;
from about 0.1 wt % to about 25.0 wt % WO 3 ;
from about 0.01 wt % to about 9.0 wt % SiO 2 ;
from about 0.1 to about 17.0 wt % BaCO 3 ;
from about 0.1 to about 15.0 wt % ZnO;
from about 0.1 to about 6.0 wt % H 3 BO 3 ;
from about 0.01 to about 2.0 wt % LiF;
from about 0.01 to about 2.0 wt % CUD; and
from about 0.01 to about 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.
14. A method of forming an electronic component comprising:
applying the composition of claim 13 to a substrate; and
firing the substrate at a temperature sufficient to sinter the composition.
15. A method of forming an electronic component comprising:
applying the composition of claim 12 to a substrate; and
firing the substrate at a temperature sufficient to sinter the composition.
16. The method of claim 15 , wherein the firing is conducted at a temperature of from about 800° C. to about 1000° C.
17. An electric or electronic component comprising, prior to firing, the composition of claim 1 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
0.5-10 wt % of at least one glass frit, and
10-40 wt % of an organic portion.
18. The composition according to claim 1 , wherein the mixture comprises at least one of oxides, carbonates, nitrates, sulfates, and phosphates.
19. A lead-free and cadmium-free dielectric paste comprising a solids portion, wherein the solids portion comprises:
from about 20.0 wt % to about 45.0 wt % BaO;
from about 10.0 wt % to about 38.0 wt % SrO;
from about 21.0 wt % to about 47.0 wt % TiO 2 ;
from about 0.1 wt % to about 25.0 wt % WO 3 ;
from about 0.01 wt % to about 9.0 wt % SiO 2 ;
from about 0.1 to about 17.0 wt % BaCO 3 ;
from about 0.1 to about 15.0 wt % ZnO;
from about 0.1 to about 6.0 wt % H 3 BO 3 ;
from about 0.01 to about 2.0 wt % LiF;
from about 0.01 to about 2.0 wt % CUD; and
from about 0.01 to about 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.
20. A method of forming an electronic component comprising:
applying the dielectric paste of claim 19 to a substrate; and firing the substrate at a temperature sufficient to sinter the dielectric paste.
21. The method of claim 20 , wherein the firing is conducted at a temperature of from about 800° C. to about 1000° C.