Process for producing an insulator layer, process for producing an organic optoelectronic component comprising an insulator layer and organic optoelectronic component comprising an insulator layer
A method is specified for production of an insulator layer. This method comprises the following process steps: A) providing a precursor comprising a mixture of a first, a second and a third component where—the first component comprises a compound of the general where R1 and R2 are each independently selected from a group comprising hydrogen and alkyl radicals and n=1 to 10 000; the second component comprises a compound of the general where R3 is an alkyl radical, and the third component comprises at least one amine compound; B) applying the precursor to a substrate; C) curing the precursor to form the insulator layer. The first compound comprises an epoxy group and a hydroxyl group. The second compound comprises an ester group. The curing takes place at room temperature or at temperatures between 50° C. and 260° C.
1. A method for producing an insulator layer, comprising the method steps:
A) providing a precursor by mixing a first, a second and a third component, wherein
the first component comprises a compound of the general formula IA and four compounds of the following formula IB-1, IB-2, IB-3 and IB-4
wherein
R 1 and R 2 are each independently selected from a group consisting of hydrogen and alkyl radicals and n=1 to 10,000;
the second component comprises a compound of the general formula IIA
wherein R 3 is an alkyl radical, and
the third component comprises at least one amine compound
B) applying the precursor to a substrate;
C) curing the precursor for the formation of the insulator layer.
2. The method according to claim 1 , wherein the precursor consists of the first, the second and the third component and the first component is present at a concentration of 70 to 80 weight percent with respect to the total weight of the precursor.
3. The method according to claim 1 , wherein the first component contains 45 to 65 weight percent of the compound of formula IA with respect to the total weight of the first component.
4. The method according to claim 1 , wherein the compound of the general formula IIA of the second component has the following formula IIA-1:
5. The method according to claim 1 , wherein the amine compound is selected from a group consisting of the compound of formula III-1, the compound of formula III-2 and combinations thereof:
6. A method for producing an insulator layer, comprising the method steps:
A) providing a precursor by mixing a first, a second and a third component, wherein
the precursor consists of the first, the second and the third component and the first component is present at a concentration of 70 to 80 weight percent, the second component is present at a concentration of 5 to 15 weight percent and the third component is present at a concentration of 10 to 20 weight percent with respect to the total weight of the precursor,
the first component comprises a compound of the general formula IA and four compounds of the following formulas IB-1, IB-2, IB-3 and IB-4
wherein
R 1 and R 2 are each independently selected from a group consisting hydrogen and alkyl radicals and n=1 to 10,000;
the second component comprises a compound of the general formula IIA
wherein R 3 is an alkyl radical, and
the third component comprises at least one amine compound
B) applying the precursor to a substrate;
C) curing the precursor for formation of the insulator layer.
7. The method according to claim 6 , wherein the first component contains 45 to 65 weight percent of the compound of formula IA with respect to the total weight of the first component.
8. The method according to claim 6 , wherein the compound of the general formula IIA of the second component has the following formula IIA-1:
9. The method according to claim 6 , wherein the amine compound is selected from a group consisting of the compound of formula III-1, the compound of formula III-2 and combinations thereof: