IP Library Granted Patent US 10,436,722
Granted Patent B2
US 10,436,722 · App. 15/311,879 · Granted Oct 8, 2019

Positive/negative phase shift bimetallic zone plate

Inventors: Kun Gao (Anhui, CN); Jian Chen (Anhui, CN); Renfang Hu (Anhui, CN); Zhili Wang (Anhui, CN); Dajiang Wang (Anhui, CN); Zhiyun Pan (Anhui, CN); Wangsheng Chu (Anhui, CN); Shiqiang Wei (Anhui, CN)
Assignee: University of Science And Technology of China
G01N23/083B05D1/005C23F1/00G02B5/18G02B27/44G21K1/06G21K1/067G21K7/00
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,436,722
App. No.
15/311,879
Granted
Oct 8, 2019
Kind
B2
Abstract

The invention provides a positive/negative phase shift bimetallic zone plate and production method thereof, wherein the positive/negative phase shift bimetallic zone plate comprises: a first metallic material having a positive phase shift; a second metallic material having a negative phase shift at a working energy point; wherein the first metallic material and the second metallic material are alternately arranged, so that the second metallic material replaces the blank portion in a cycle of a traditional zone plate.

Claims (20)

1. A positive/negative phase shift bimetallic zone plate; comprising:

a first metallic material having a positive phase shift;

a second metallic material having a negative phase shift at a working energy point;

wherein the first metallic material and the second metallic material are alternately arranged, so that the second metallic material replaces the blank portion in a cycle of a traditional zone plate.

2. The positive/negative phase shift bimetallic zone plate of claim 1 , wherein the positive/negative phase shift bimetallic zone plate is annular, and the first metallic material and the second metallic material form a structure of alternate rings.

3. The positive/negative phase shift bimetallic zone plate of claim 1 , the first metallic material is selected from nickel, gold, germanium, titanium, vanadium, chromium, manganese, iron, copper, zinc.

4. The positive/negative phase shift bimetallic zone plate of claim 1 , the second metallic material is selected from titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, hafnium, tungsten, rhenium and osmium.

5. The positive/negative phase shift bimetallic zone plate of claim 1 , wherein in the case that the positive/negative phase shift bimetallic zone plate has the same thickness as that of a normal monometallic phase zone plate, the diffraction efficiency of the positive/negative phase shift bimetallic zone plate is higher than the diffraction efficiency of the normal monometallic phase zone plate in conventional ranges.

6. The positive/negative phase shift bimetallic zone plate of claim 1 , the positive/negative phase shift bimetallic zone plate is a vanadium-nickel, titanium-nickel, or vanadium-gold bimetallic zone plate.

7. A method of producing a positive/negative phase shift bimetallic zone plate, comprising following steps:

a. depositing a thin film of a first metallic material on a substrate;

b. forming a photoresist having a zone plate structure on the thin film of the first metallic material;

c. transferring the zone plate structure to the thin film of the first metallic material by performing etching via the formed photoresist having the zone plate structure, so as to form a zone plate structure of the first metallic material;

d. depositing the second metallic material at interspaces formed by the etching;

e. removing the photoresist, so as to form a positive/negative phase shift bimetallic zone plate structure.

8. The method of claim 7 , wherein the photoresist is coated by spin coating, and thereafter is subjected to electron beam exposure

or interference lithography, so as to form a photoresist having a zone plate structure.

9. The method of claim 7 , wherein the etching in step d is performed by argon ion etching or reactive ion etching.

10. The method of claim 7 , further comprising:

opening a window on the back side of the positive/negative phase shift bimetallic zone plate structure obtained in step e, to obtain the positive/negative phase shift bimetallic zone plate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 27, 2016
From: GAO, KUN; CHEN, JIAN; HU, RENFANG; WANG, ZHILI; WANG, DAJIANG; PAN, ZHIYUN; CHU, WANGSHENG; WEI, SHIQIANG
To: UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
Reel/Frame 040773/0741 →
Continuity (1)
Related Publication 20170082560A1 · Mar 23, 2017