Device and method for producing a dynamic reference signal for a driver circuit for a semiconductor power switch

1. A device for producing a dynamic reference signal for a control circuit for a power semiconductor switch, wherein the device comprises:

a reference signal generator for providing a dynamic reference signal having a steady-state signal level after a predetermined time has elapsed after a switchover process of the power semiconductor switch;

a passive charging circuit, which is configured to increase a signal level of the dynamic reference signal in reaction to a switchover of a control signal of the power semiconductor switch from an OFF state into an ON state for at least one part of the predetermined time above the steady-state signal level, in order to produce the dynamic reference signal; and

an output for tapping off the dynamic reference signal.

2. The device as claimed in claim 1 , wherein the dynamic reference signal is a dynamic reference voltage.

3. The device as claimed in claim 1 , wherein the passive charging circuit comprises an RC element.

4. The device as claimed in claim 1 , wherein the passive charging circuit is configured to increase the signal level of the dynamic reference signal in reaction to the switchover of the control signal in the manner of an abrupt jump.

5. The device as claimed in claim 3 , wherein the passive charging circuit is further configured such that the capacitance of the RC element charges following a switchover of a control signal of the power semiconductor switch from an ON state into an OFF state.

6. The device as claimed in claim 3 , wherein the passive charging circuit is configured such that the capacitance of the RC element discharges following the switchover of the control signal and thus produces the temporarily increased level of the dynamic reference signal and returns it to the steady-state level again as a result of the discharge.

7. The device as claimed in claim 1 , wherein the reference signal generator contains a circuit for producing the steady-state signal level.

8. The device as claimed in claim 1 , further comprising:

a first clamping circuit, which is configured to limit the dynamic reference signal to a predetermined minimum level.

9. The device as claimed in claim 1 , further comprising:

a second clamping circuit, which is configured to restrict the dynamic reference signal to a predetermined maximum level.

10. The device as claimed in claim 1 , further comprising:

a passive switch, which is coupled between the reference signal generator and the passive charging circuit, wherein the passive switch is configured to isolate the reference signal generator and the passive charging circuit in reaction to a switchover of the control signal of the power semiconductor switch from an ON state into an OFF state.

11. The device as claimed in claim 1 , wherein the dynamic reference signal is a current signal.

12. The device as claimed in claim 1 , wherein the circuit for producing a dynamic reference signal an input for coupling to an external static reference level, and wherein the circuit for producing a dynamic reference signal is configured to use the static reference level directly or in converted form as the steady-state signal level.

13. The device as claimed in claim 1 , wherein an internal reference level of the device forms the steady-state signal level.

14. The device as claimed in claim 3 , wherein the capacitance of the RC element discharges with a time constant selected in order to prevent the short-circuit and/or overcurrent state detection circuit from detecting a short-circuit and/or overcurrent state in normal operation.

15. The device as claimed in claim 3 , wherein the capacitance of the RC element discharges with a time constant selected in order to ensure that the short-circuit and/or overcurrent state detection circuit detects a short-circuit and/or overcurrent state in the short-circuit and/or overcurrent case.