Electrical contact structure for a semiconductor component, and semiconductor component
An electrical contact structure ( 10 ) for a semiconductor component ( 100 ) is specified, comprising a transparent electrically conductive contact layer ( 1 ), on which a first metallic contact layer ( 2 ) is applied, a second metallic contact layer ( 3 ), which completely covers the first metallic contact layer ( 2 ), and a separating layer ( 4 ), which is arranged between the transparent electrically conductive contact layer ( 1 ) and the second metallic contact layer ( 3 ) and which separates the second metallic contact layer ( 3 ) from the transparent electrically conductive contact layer ( 1 ). Furthermore, a semiconductor component ( 100 ) comprising a contact structure ( 10 ) is specified.
1. An electrical contact structure for a semiconductor component comprising:
a transparent electrically conductive contact layer, on which a first metallic contact layer is applied;
a second metallic contact layer, which completely covers the first metallic contact layer; and
a separating layer, which is arranged between the transparent electrically conductive contact layer and the second metallic contact layer and which separates the second metallic contact layer from the transparent electrically conductive contact layer,
wherein a barrier layer is arranged between the first and second metallic contact layers, the barrier layer completely covering the first metallic contact layer and being covered by the second metallic contact layer,
wherein the barrier layer partly covers the separating layer.
2. The electrical contact structure according to claim 1 , wherein the separating layer projects below the second metallic contact layer.
3. The electrical contact structure according to claim 1 , wherein the barrier layer is arranged directly on the transparent electrically conductive contact layer in a region surrounding the first metallic contact layer.
4. The electrical contact structure according to claim 1 , wherein the separating layer is transparent and comprises a dielectric material.
5. The electrical contact structure according to claim 1 , wherein the separating layer comprises a plurality of layers.
6. The electrical contact structure according to claim 1 , wherein the separating layer comprises an oxide, nitride or oxynitride.
7. The electrical contact structure according to claim 1 , wherein the separating layer is spaced apart from the first metallic contact layer.
8. The electrical contact structure according to claim 1 , wherein the separating layer covers the transparent electrically conductive contact layer over a large area apart from a region surrounding the first metallic contact layer.
9. The electrical contact structure according to claim 1 , wherein the transparent electrically conductive contact layer comprises a transparent electrically conductive oxide or oxynitride.
10. The electrical contact structure according to claim 1 , wherein the transparent electrically conductive contact layer comprises an indium-containing oxide or oxynitride.
11. The electrical contact structure according to claim 1 , wherein the first metallic contact layer comprises aluminium and the second metallic contact layer comprises gold.
12. The electrical contact structure according to claim 1 , wherein the separating layer comprises a silicon dioxide layer and a silicon nitride layer thereon, or wherein the separating layer comprises an aluminium oxide or tantalum oxide layer and a silicon dioxide layer thereon.
13. A semiconductor component, comprising:
a substrate, on which a semiconductor layer sequence is applied;
an electrical contact structure on a top side of the semiconductor layer sequence facing away from the substrate, the electrical contact structure comprising:
a transparent electrically conductive contact layer, on which a first metallic contact layer is applied;
a second metallic contact layer, which completely covers the first metallic contact layer; and
a separating layer, which is arranged between the transparent electrically conductive contact layer and the second metallic contact layer and which separates the second metallic contact layer from the transparent electrically conductive contact layer.
14. The semiconductor component according to claim 13 , wherein the electrical contact structure comprises or forms a bonding pad and/or one or a plurality of conduction webs for current spreading.
15. The semiconductor component according to claim 13 , wherein the semiconductor layer sequence comprises an optoelectronically active region.
16. The semiconductor component according to claim 13 , wherein the semiconductor component has side surfaces adjacent to the top side and the separating layer extends at least partly over the side surfaces.
17. The semiconductor component according to claim 13 , wherein the separating layer is arranged only on the top side of the semiconductor layer sequence, the semiconductor component has side surfaces adjacent to the top side, and a passivation layer at least partly covers the side surfaces and at least one portion of the separating layer on the top side.
18. An electrical contact structure for a semiconductor component comprising:
a transparent electrically conductive contact layer, on which a first metallic contact layer is applied;
a second metallic contact layer, which completely covers the first metallic contact layer; and
separating layer, which is arranged between the transparent electrically conductive contact layer and the second metallic contact layer and which separates the second metallic contact layer from the transparent electrically conductive contact layer,
wherein the separating layer projects below the second metallic contact layer,
wherein a barrier layer is arranged between the first and second metallic contact layers, the barrier layer completely covering the first metallic contact layer and being covered by the second metallic contact layer,
wherein the barrier layer partly covers the separating layer,
wherein the barrier layer is arranged directly on the transparent electrically conductive contact layer in a region surrounding the first metallic contact layer, and
wherein the separating layer is spaced apart from the first metallic contact layer.
19. An electrical contact structure for a semiconductor component comprising:
a transparent electrically conductive contact layer, on which a first metallic contact layer is applied;
a second metallic contact layer, which completely covers the first metallic contact layer; and
a separating layer, which is arranged between the transparent electrically conductive contact layer and the second metallic contact layer and which separates the second metallic contact layer from the transparent electrically conductive contact layer,
wherein the separating layer is spaced apart from the first metallic contact layer.
20. An electrical contact structure comprising:
a transparent electrically conductive contact layer;
a first metallic contact layer;
a separating layer;
a second metallic contact layer; and
a barrier layer,
wherein the second metallic contact layer completely covers the first metallic contact layer,
wherein the separating layer is arranged between the transparent electrically conductive contact layer and the second metallic contact layer,
wherein the separating layer separates the second metallic contact layer from the transparent electrically conductive contact layer, and
wherein the barrier layer partly covers the separating layer.