IP Library Granted Patent US 10,620,324
Granted Patent B2
US 10,620,324 · App. 15/315,035 · Granted Apr 14, 2020

Radiation detection apparatus and related method

Inventors: Srinidhi Ramachandra (Bangalore, IN); Wusheng Xu (Shanghai, CN); Alok Mani Srivastava (Niskayuna, NY); Gopi Chandran Ramachandran (Bangalore, IN); Prasanth Kumar Nammalwar (Bangalore, IN); Sergei Ivanovich Dolinsky (Niskayuna, NY); Helene Claire Climent (Sugarland, TX)
Assignee: Baker Hughes Oilfield Operations, LLC
G01T1/2023G01T1/2018G01V5/04
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Quick Facts
Patent No.
US 10,620,324
App. No.
15/315,035
Granted
Apr 14, 2020
Kind
B2
Abstract

A method and an apparatus for detecting photons are disclosed. The apparatus includes a scintillator single crystal and an avalanche photodiode coupled to the scintillator single crystal. The scintillator single crystal is at a temperature greater than about 175° C. and at a shock level in a range from about 20 Grms to about 30 Grms. The scintillator single crystal includes a praseodymium doped composition selected from (La x Y 1-x )2Si 2 O 7 :Pr, ABCl 3-y X y :Pr, A 2 (Li,Na)LaCl 6-y X y :Pr, or any combinations thereof. As used herein A is cesium, rubidium, potassium, sodium, or a combination thereof, B is calcium, barium, strontium, magnesium, cadmium, zinc, or a combination thereof, and X is bromine, iodine, or a combination thereof. Further, (0<x<1), and (0<y<3).

Claims (17)

1. A method for detecting a high-energy radiation in a harsh environment, the method comprising:

exposing a scintillator single crystal to the high energy radiation at a temperature greater than about 175° C.; and

detecting the high energy radiation with an avalanche photodiode coupled to the scintillator single crystal, wherein the scintillator single crystal is CsCaCl3-yBry:Pr and (0<y≤1);

wherein a luminescence intensity of the scintillator single crystal at a temperature greater than 200° C. is greater than about 60% of the luminescence intensity of the scintillator single crystal at room temperature;

wherein the scintillator single crystal produces photons in an emission wavelength ranging from about 275 nm to about 350 nm;

wherein the amount of praseodymium present in the scintillator single crystal composition ranges from about 0.5 mol % to about 10 mol %; and

wherein the scintillator single crystal is exposed to the high energy radiation at a shock level greater than about 20 Grms.

2. The method of claim 1 , wherein a luminescence intensity of the scintillator single crystal at a temperature greater than 200° C. is greater than about 75% of the luminescence intensity of the scintillator single crystal at room temperature.

3. The method of claim 1 , wherein the high-energy radiation is a gamma radiation.

4. An apparatus for detecting a high-energy radiation in a harsh environment, the apparatus comprising:

a scintillator single crystal; and

an avalanche photodiode coupled to the scintillator single crystal, wherein the scintillator single crystal is configured to operate at a temperature greater than about 175° C. and at a shock level in the range from about 20 Grms to 30 Grms, and comprises a praseodymium doped composition comprising CsCaCl3-yBry:Pr and (0<y≤1);

wherein a luminescence intensity of the scintillator single crystal at a temperature greater than 200° C. is greater than about 60% of the luminescence intensity of the scintillator single crystal at room temperature;

wherein the scintillator single crystal has an emission wavelength in a range from about 275 nm to about 350 nm; and

wherein the amount of praseodymium present in the scintillator single crystal ranges from about 0.5 atomic % to about 10 atomic %.

5. The apparatus of claim 4 , wherein a luminescence intensity of the scintillator single crystal at a temperature greater than 200° C. is greater than about 75% of the luminescence intensity of the scintillator single crystal at room temperature.

6. The apparatus of claim 4 , wherein the amount of praseodymium present in the scintillator single crystal ranges from about 0.5 atomic % to about 3 atomic %.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 27, 2020
From: GENERAL ELECTRIC COMPANY
To: BAKER HUGHES OILFIELD OPERATIONS, LLC
Reel/Frame 051708/0186 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 16, 2020
From: GENERAL ELECTRIC COMPANY
To: BAKER HUGHES OILFIELD OPERATIONS, LLC
Reel/Frame 051620/0268 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 28, 2017
From: RAMACHANDRA, SRINIDHI; XU, WUSHENG; SRIVASTAVA, ALOK MANI; RAMACHANDRAN, GOPI CHANDRAN; NAMMALWAR, PRASANTH KUMAR; DOLINSKY, SERGEI IVANOVICH; CLIMENT, HELENE CLAIRE
To: GENERAL ELECTRIC COMPANY
Reel/Frame 041399/0843 →