RF Filter
An RF filter is disclosed. In an embodiment, the RF filter includes series-interconnected basic elements, each basic element having an electroacoustic resonator and impedance converters interconnected in series between the basic elements, wherein the impedance converters are admittance inverters, wherein the resonators of the basic elements are parallel resonators only, and wherein at least one of the resonators is tunable.
1 - 17 . (canceled)
18 . An RF filter comprising:
series-interconnected basic elements, each basic element having an electroacoustic resonator; and
impedance converters interconnected in series between the basic elements,
wherein the impedance converters are admittance inverters,
wherein the resonators of the basic elements are parallel resonators only, and
wherein at least one of the resonators is tunable.
19 . The RF filter as claimed in claim 18 , wherein the impedance converters comprise as impedance elements:
capacitive elements and inductive elements;
only capacitive elements; or
only inductive elements.
20 . The RF filter as claimed in claim 18 , wherein the impedance converters comprise phase shifter lines.
21 . The RF filter as claimed in claim 18 , wherein the RF filter is described by a symmetrical description matrix B with B ij =B ji .
22 . The RF filter as claimed in claim 18 , further comprising a second impedance converter connected in parallel with a segment of the RF filter, and wherein the segment comprises a series connection having a basic element and two impedance converters.
23 . The RF filter as claimed in claim 18 , wherein the tunable resonator comprises a resonator element and a tunable impedance element that is interconnected in series or in parallel with the resonator element.
24 . The RF filter as claimed in claim 18 , wherein the tunable resonator comprises an array of resonator elements, each resonator element is connectable to the resonator by switches.
25 . The RF filter as claimed in claim 24 , wherein the switches are CMOS switches, GaAs based switches, JFET switches or MEMS switches.
26 . The RF filter as claimed in claim 18 , wherein all resonators are tunable to different frequency bands.
27 . The RF filter as claimed in claim 18 , wherein a tunability of the resonators enables:
compensation of a temperature fluctuation;
adjustment of the RF filter with regard to an impedance matching;
adjustment of the RF filter with regard to an insertion loss; or
adjustment of the RF filter with regard to an isolation.
28 . The RF filter as claimed in claim 18 , wherein each resonator comprises the same number of resonator elements which are controllable via switches addressable via an MIPI interface.
29 . The RF filter as claimed in claim 18 , wherein the RF filter comprises two parallel capacitive elements and one parallel inductive element.
30 . The RF filter as claimed in claim 18 , wherein the RF filter comprises three parallel capacitive elements.
31 . The RF filter as claimed in claim 18 , wherein the RF filter comprises three parallel inductive elements.
32 . The RF filter as claimed in claim 18 , wherein the RF filter comprises two parallel inductive elements and one parallel capacitive element.
33 . The RF filter as claimed in claim 18 , wherein the RF filter comprises two basic elements and a capacitive element interconnected in parallel with the two basic elements.
34 . The RF filter as claimed in claim 18 , wherein the RF filter comprises:
a signal path;
four capacitive elements in the signal path;
six switchable resonators, each switchable resonator having a resonator element and a switch interconnected in series therewith in a transverse branch relative to ground; and
an inductive element connected in parallel with two of the four capacitive elements.