Light emitting device
An embodiment provides a light-emitting element comprising: a substrate; a light-emitting structure, which is arranged on the substrate, and which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a light-transmissive conductive layer arranged on the second conductive semiconductor layer; and first and second electrodes electrically connected to the first and second conductive semiconductor layers, respectively, wherein the light-transmissive conductive layer has corrugated portions formed on a first surface thereof, which is directed to the second conductive semiconductor layer, and the density of the corrugated portions in the peripheral area of the light-transmissive conductive layer is larger than the density of the corrugated portions in the central area of the light-transmissive conductive layer.
1. A light emitting device comprising:
a substrate;
a light emitting structure disposed on the substrate, the light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
a transmissive conductive layer disposed on the second conductivity type semiconductor layer; and
first and second electrodes respectively electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
wherein the transmissive conductive layer is formed with concave and convex portions at a surface thereof directed to the second conductivity type semiconductor layer, and the concave and convex portions have a greater density in an edge region of the transmissive conductive layer than in a central region of the transmissive conductive layer, and
wherein the concave and convex portions have greater sizes in the edge region of the transmissive conductive layer than in the central region of the transmissive conductive layer.
2. The light emitting device according to claim 1 , wherein the concave and convex portions have sizes gradually increasing in a direction from the central region of the transmissive conductive layer to the edge region of the transmissive conductive layer.
3. The light emitting device according to claim 1 , wherein the numbers of the concave and convex portions per unit area are greater in the edge region of the transmissive conductive layer than in the central region of the transmissive conductive layer.
4. The light emitting device according to claim 3 , wherein the numbers of the concave and convex portions per unit area gradually increase in a direction from the central region of the transmissive conductive layer to the edge region of the transmissive conductive layer.
5. The light emitting device according to claim 1 , wherein the distance between the concave portions and the distance between the convex portions are smaller in the edge region of the transmissive conductive layer than in the central region of the transmissive conductive layer.
6. The light emitting device according to claim 5 , wherein the distance between the concave portions and the distance between the convex portions gradually decrease in a direction from the central region of the transmissive conductive layer to the edge region of the transmissive conductive layer.
7. The light emitting device according to claim 1 , wherein the transmissive conductive layer is made of indium tin oxide (ITO).
8. The light emitting device according to claim 1 , wherein the second conductivity type semiconductor layer has a surface patterned to have portions having shapes opposite to shapes of the concave and convex portions of the transmissive conductive layer.
9. A light emitting device comprising:
a substrate;
a light emitting structure disposed on the substrate, the light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
a transmissive conductive layer disposed on the second conductivity type semiconductor layer; and
first and second electrodes respectively electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
wherein the transmissive conductive layer is formed with concave and convex portions at a surface thereof opposing the second conductivity type semiconductor layer, and the concave and convex portions have a greater density in an edge region of the transmissive conductive layer than in a central region of the transmissive conductive layer, and
wherein the concave and convex portions have greater sizes in the edge region of the transmissive conductive layer than in the central region of the transmissive conductive layer.
10. The light emitting device according to claim 9 , wherein the concave and convex portions have sizes gradually increasing in a direction from the central region of the transmissive conductive layer to the edge region of the transmissive conductive layer.
11. The light emitting device according to claim 9 , wherein the numbers of the concave and convex portions per unit area are greater in the edge region of the transmissive conductive layer than in the central region of the transmissive conductive layer.
12. The light emitting device according to claim 11 , wherein the numbers of the concave and convex portions per unit area gradually increase in a direction from the central region of the transmissive conductive layer to the edge region of the transmissive conductive layer.
13. The light emitting device according to claim 9 , wherein the distance between the concave portions and the distance between the convex portions are smaller in the edge region of the transmissive conductive layer than in the central region of the transmissive conductive layer.
14. The light emitting device according to claim 13 , wherein the distance between the concave portions and the distance between the convex portions gradually decrease in a direction from the central region of the transmissive conductive layer to the edge region of the transmissive conductive layer.
15. The light emitting device according to claim 9 , wherein the transmissive conductive layer is made of indium tin oxide (ITO).
16. The light emitting device according to claim 9 , wherein the second conductivity type semiconductor layer is disposed on the transmissive conductive layer, and the second conductivity type semiconductor layer has a surface patterned to have portions having shapes opposite to shapes of the concave and convex portions of the transmissive conductive layer.
17. The light emitting device according to claim 9 , wherein cross-sections of the concave and convex portions in a direction parallel to a light emitting surface of the active layer have a circular or polygonal shape.
18. A light emitting device comprising:
a substrate;
a light emitting structure disposed on the substrate, the light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and
a transmissive conductive layer disposed on the second conductivity type semiconductor layer,
wherein the transmissive conductive layer has concave and convex portions disposed on a first surface directed to the second conductivity type semiconductor layer and a second surface opposing the first surface respectively, and
wherein a density of the concave and convex portions on the first surface is different from a density of the concave and convex portions on the second surface.