Phosphor ceramic, encapsulated optical semiconductor element, circuit board, optical semiconductor device and light-emitting device
The phosphor ceramic has pores with a pore diameter of 3.0 μm or more and 12.0 μm or less. In the phosphor ceramic, a pore volume percentage of pores with a pore diameter of 3.0 μm or more and 12.0 μm or less is 1.5% by volume or more and 9.5% by volume or less.
1. A phosphor ceramic having pores with a pore diameter of 3.0 μm or more and 12.0 μm or less,
wherein in the phosphor ceramic, a volume percentage of pores with a pore diameter of 3.0 μm or more and 12.0 μm or less is 1.5% by volume or more and 9.5% by volume or less.
2. The phosphor ceramic according to claim 1 ,
wherein the phosphor ceramic is platy, and satisfies the formula below:
V≤ 1.30×(−log T )
(where V represents a volume percentage (%) of pores with a pore diameter of less than 3.0 μm, and T represents the thickness (mm) of the phosphor ceramic).
3. The phosphor ceramic according to claim 1 , wherein at least one of (1) to (3) below is satisfied:
(1) 67 ppm or less of Na is contained,
(2) 23 ppm or less of Mg is contained, and
(3) 21 ppm or less of Fe is contained.
4. The phosphor ceramic according to claim 1 , wherein the phosphor ceramic has an average pore diameter of 3.0 μm or more and 10.0 μm or less.
5. An optical semiconductor device comprising, in order:
a substrate,
an optical semiconductor element mounted on the substrate,
an adhesive layer, and
the phosphor ceramic according to claim 1 disposed on the adhesive layer.
6. An optical semiconductor device comprising, in order:
a substrate,
an optical semiconductor element mounted on the substrate,
an encapsulating layer encapsulating the optical semiconductor element, and
the phosphor ceramic according to claim 1 disposed on the encapsulating layer.
7. An encapsulated optical semiconductor element comprising, in order:
an optical semiconductor element,
an encapsulating layer encapsulating the optical semiconductor element, and
the phosphor ceramic according to claim 1 disposed on the encapsulating layer.
8. A circuit board comprising:
the phosphor ceramic according to claim 1 for mounting an optical semiconductor element, and
an electrode wiring for electrically connecting with the optical semiconductor element laminated on one surface of the phosphor ceramic.
9. A light-emitting device comprising:
a light source that emits light to one side,
a reflection mirror disposed on one side in spaced-apart relation from the light source, and in which a through hole for the light to pass through is formed, and
the phosphor ceramic according to claim 1 disposed on one side in spaced-apart relation from the reflection mirror for the light to be emitted.