Sensing device and method of production thereof
In accordance with an example embodiment of the present invention, a device is disclosed. The device comprises: a sensing region comprising an active material and two or more electrodes in electrical contact with the active material; and a switching region providing control over the sensing region, the switching region comprising an active material and two or more electrodes in electrical contact with the active material. The switching region and the sensing region share one electrode, and the switching region and the sensing region share at least part of the active material. A method and apparatus for producing the device are also disclosed.
1. A device, comprising:
a sensing region comprising an active material and two or more electrodes in electrical contact with the active material; and
a switching region providing control over the sensing region, the switching region comprising an active material and two or more electrodes in electrical contact with the active material; wherein the switching region and the sensing region share one electrode, and the switching region and the sensing region share at least part of the active material.
2. The device of claim 1 , wherein elements of the switching region are arranged to form a vertical stack.
3. The device of claim 1 , wherein elements of the switching region form a memristor.
4. The device of claim 3 , wherein the memristor is a bipolar memristor, a unipolar memristor or an irreversible memristor.
5. The device of claim 1 , wherein the sensing region has a planar structure and the two or more electrodes of the sensing region are separated horizontally.
6. The device of claim 1 , wherein the active material of the switching region and/or the active material of the sensing region comprises one or more materials selected from the group of: transition metal dichalcogenides (TMD), partially oxidized TMD, fully oxidized transition metal oxides (TMO) and graphene-like materials.
7. The device of claim 1 ,
wherein part of the active material of the switching region that is in proximity to at least one of the two or more electrodes of the switching region is fully oxidized, and wherein the remaining active material of the switching region is partially oxidized or unoxidized; and
wherein the active material of the switching region and/or the active material of the sensing region has a thickness in the range of 10 to 1000 nanometers.
8. The device of claim 1 , wherein the elements of the sensing region form a sensor selected from the group of: temperature sensor, pressure sensor, touch sensor, strain sensor, mechanical deformation sensor, magnetic field sensor, ambient light sensor, UV light sensor, ionizing radiation detector, humidity sensor, gas sensor, chemical sensor and biological sensor.
9. The device of claim 8 , wherein the sensor is a capacitive sensor.
10. The device of claim 8 , wherein the sensor is a resistive sensor.
11. The device of claim 1 , wherein at least one electrode of the sensing region and at least one electrode of the switching region are connected to a common electrical circuit.
12. The device of claim 11 , wherein the sensing region is electrically connected to the switching region in series.
13. The device of claim 11 , wherein the sensing region is electrically connected to the switching region in parallel.
14. The device of claim 1 , wherein all electrodes comprise at least one conductive material from the group of: metals, metal oxides, carbon-based materials, organic materials and polymer materials.