Method for producing an optoelectronic component
View Patent ↗In various exemplary embodiments, a method for producing an optoelectronic component is provided. In this case, a high temperature solid is provided which is stable at least up to a predefined first temperature. A liquid glass solder having a second temperature, which is lower than the first temperature, is applied to the high temperature solid in a structured fashion. The glass solder is solidified, as a result of which a glass solid is formed. An optoelectronic layer structure is formed above the glass solid. The glass solid and the optoelectronic layer structure form the optoelectronic component. The optoelectronic component is removed from the high temperature solid.
1. A method for producing an optoelectronic component, comprising:
providing a high temperature solid which is stable at least up to a predefined first temperature;
applying a liquid glass solder having a second temperature, which is lower than the first temperature, to the high temperature solid in a structured fashion;
solidifying the glass solder, as a result of which a glass solid is formed;
forming an optoelectronic layer structure above the glass solid, wherein the glass solid and the optoelectronic layer structure form the optoelectronic component; and
removing the optoelectronic component from the high temperature solid.
2. The method as claimed in claim 1 , wherein said stability up to the first temperature prevents a cohesive connection between the high temperature solid and the glass solder and/or the glass solid.
3. The method as claimed in claim 1 , wherein scattering particles are embedded into the liquid glass solder, and wherein the embedded scattering particles together with the glass solder are applied to the high temperature solid and are subsequently embedded in the glass solid.
4. The method as claimed in claim 1 , wherein the glass solder is applied to the high temperature solid such that the glass solid is isolated on the high temperature solid.
5. The method as claimed in claim 1 , wherein the high temperature solid comprises graphite.
6. The method as claimed in claim 1 , wherein the high temperature solid comprises ceramic.
7. The method as claimed in claim 1 , wherein the glass solder is applied so thinly that the glass solid forms a flexible carrier.
8. The method as claimed in claim 1 , wherein the glass solder is applied in such a way that the glass solid has a thickness in a range of 20 μm to 10 000 μm.
9. The method as claimed in claim 1 , wherein the glass solder is applied to the high temperature solid in a structured fashion by means of a print-through method.
10. The method as claimed in claim 1 , wherein the optoelectronic layer structure comprises a first electrode above the glass solid, a functional layer structure above the first electrode, and a second electrode above the functional layer structure.
11. The method as claimed in claim 10 , wherein the functional layer structure comprises an organic functional layer structure.
12. The method as claimed in claim 1 , wherein a cover is formed above the optoelectronic layer structure, wherein the optoelectronic component comprises the glass solid, the optoelectronic layer structure and the cover.
13. The method as claimed in claim 12 , wherein the cover comprises an encapsulation layer above the optoelectronic layer structure.
14. The method as claimed in claim 13 , wherein the cover comprises the encapsulation layer and a covering body above the encapsulation layer.
15. The method as claimed in claim 1 , wherein
the liquid glass solder is applied to the high temperature solid at at least two different regions and two glass solids physically separated from one another are formed therefrom,
each of the glass solids forms a carrier for a respective optoelectronic component, and
the high temperature solid is removed after completing the optoelectronic components.