Sub-module of a modular braking unit, braking unit, and method for operating the braking unit

1. A method for operating a braking unit in the event of a fault in an inverter that is connected to a DC transmission system;

providing a braking unit connected to the DC transmission system, the braking unit having a plurality of sub-modules connected in series with one another and each of the sub-modules including an inverse diode, a storage capacitor connected in parallel with the inverse diode by way of a free-wheel diode, an energy-consuming switching unit connected to the storage capacitor, and an actively switchable semiconductor bypass path connected in parallel with the inverse diode;

determining a current flowing through the series-connected sub-modules and voltages at individual sub-modules;

establishing a prevailing working point of the respective sub-module from the ascertained values for the current and the voltages at the sub-modules; and

with respect to at least one predetermined optimization criterion for the braking unit adjusting the voltages at the sub-modules with reference to the respective prevailing working point by switching the actively switchable semiconductor bypass path or the energy-consuming switching unit corresponding to the at least one optimization criterion.

2. The method according to claim 1 , which comprises:

providing an optimization criterion that takes into consideration a temperature behavior of the power semiconductor switches, of the inverse diode and also of the free-wheel diode as semiconductor components of the sub-modules with reference to the respective working point of the semiconductor components for different voltages;

calculating switching losses and conductive losses of the semiconductor components of the respective sub-modules;

determining temperature increases of the semiconductor components and also the temperatures of the semiconductor components in the event of the fault in dependence upon the duration of the fault;

determining, for the respective working point of each semiconductor component of the sub-modules, a temperature difference with respect to a maximal admissible depletion layer temperature of the respective semiconductor component in the case of the possible voltages at the sub-modules; and

adjusting optimal voltages at the sub-modules using an objective function.

3. The method according to claim 2 , which comprises defining as the objective function a maximization of a temperature difference between the depletion layer temperature of a hottest semiconductor component in a sub-module and the maximal admissible depletion layer temperature of the hottest semiconductor component.

4. The method according to claim 2 , which comprises, in the event of the fault, using a thermal model for determining temperature increases of the semiconductor components and also the temperatures of the semiconductor components.

5. The method according to claim 1 , wherein the optimization criterion is a minimal ripple in the voltages at the sub-modules, an identical mean temperature of the semiconductor components, a mixture of the two, or a mixture of other optimization criteria.

6. A braking unit connected to a DC transmission system, said braking unit comprising:

a plurality of sub-modules connected in series with one another, each of said sub-modules including:

an inverse diode;

a storage capacitor connected in parallel with said inverse diode by way of a free-wheel diode;

an energy-consuming switching unit connected to said storage capacitor; and

an actively switchable semiconductor bypass path connected in parallel with said inverse diode;

a current measuring device for measuring a current flowing through said series-connected plurality of sub-modules;

a plurality of voltage measuring devices for measuring voltages at said sub-modules; and

a control unit connected to said current measuring device and said voltage measuring devices and configured for outputting control signals to said power semiconductor switches of said sub-modules for adjusting the voltages at said sub-modules in accordance with an optimization criterion.

7. The braking unit according to claim 6 , which further comprises an additional energy-consuming switching unit connected in series with said series-connected plurality of sub-modules.

8. The braking unit according to claim 6 , wherein said semiconductor bypass path comprises a power semiconductor switch.

9. The braking unit according to claim 8 , wherein said power semiconductor switch is a bipolar transistor having an insulated gate electrode (insulated-gate bipolar transistor, IGBT).

10. The braking unit according to claim 6 , wherein said energy-consuming switching unit comprises an ohmic resistor connected in parallel with said storage capacitor by way of a power semiconductor switching element.

11. The braking unit according to claim 10 , wherein said power semiconductor switching element is a bipolar transistor having an insulated gate electrode (IGBT).

12. The braking unit according to claim 6 , wherein said energy-consuming switching unit is a non-linear resistor connected directly in parallel with said storage capacitor.

13. The braking unit according to claim 12 , wherein said non-linear resistor is an overvoltage arrestor.