Semiconductor laser device and camera
Various embodiments may relate to a semiconductor laser device, including at least one laser diode, and at least one reflection surface which reflects diffusely and which is irradiated by the laser diode during operation, and an additional light-nontransmissive housing body having a cutout. The laser diode is the sole light source of the semiconductor laser device. The laser diode is mounted immovably relative to the at least one reflection surface. Light emitted by the semiconductor laser device during operation has the same spectral components as, or fewer spectral components than, light emitted by the laser diode. An interspace between the laser diode and the at least one reflection surface is free of an optical assembly. A light-emitting area of the semiconductor laser device is greater than a light-emitting area of the laser diode by at least a factor of 100.
1. A semiconductor laser device comprising:
at least one laser diode, and
at least one reflection surface which reflects diffusely and which is irradiated by the at least one laser diode during operation, and
an additional light-nontransmissive housing body having a cutout
wherein
the at least one laser diode is the sole light source of the semiconductor laser device,
the at least one laser diode is mounted immovably relative to the at least one reflection surface,
light emitted by the semiconductor laser device during operation has the same spectral components as, or fewer spectral components than, light emitted by the at least one laser diode,
an interspace between the at least one laser diode and the at least one reflection surface is free of an optical assembly,
a light-emitting area of the semiconductor laser device is greater than a light-emitting area of the at least one laser diode by at least a factor of 100,
the at least one laser diode is fitted in the cutout,
the reflection surface is part of a housing wall of the housing body in the cutout,
the housing body and the reflection surface are formed from a plastic,
the cutout has a side wall and a base surface, and
the laser diode is fitted on the side wall and the reflection surface is situated on the base surface;
wherein the semiconductor laser device further comprises a radiation-transmissive, transparent potting material, wherein the potting material completely fills a region between the reflection surface and the at least one laser diode, and the at least one laser diode is at least partly embedded into the potting material, and
wherein a diffusion medium is applied to the potting material at least in places,
wherein the diffusion medium is formed by scattering particles embedded into a matrix material, and wherein the potting material is free of the diffusion medium.
2. The semiconductor laser device as claimed in claim 1 ,
wherein the plastic is designed to be diffusely reflective.
3. The semiconductor laser device as claimed in claim 1 ,
wherein the reflection surface has a curvature, such that a divergence angle of the radiation impinging on the curvature from the at least one laser diode is increased on account of the curvature.
4. The semiconductor laser device as claimed in claim 1 ,
wherein the reflection surface is provided with an irregular roughening,
wherein a mean roughness of the roughening is between 5 μm and 200 μm inclusive.
5. The semiconductor laser device as claimed in claim 1 ,
wherein the at least one laser diode has an emission maximum in the wavelength range of between 605 nm and 660 nm inclusive or between 830 nm and 925 nm inclusive,
wherein an optical emission power of the semiconductor laser device is between 50 mW and 2.5 W inclusive, and
wherein the semiconductor laser device is free of a wavelength conversion medium.
6. The semiconductor laser device as claimed in claim 1 ,
wherein the at least one laser diode is an edge emitting semiconductor laser diode,
wherein incoherent light is emitted by the semiconductor laser device during operation.
7. The semiconductor laser device as claimed in claim 1 ,
which, with a tolerance of at most 0.15 I max , exhibits an emission intensity I(α) as a function of an angle α relative to a direction along which the maximum intensity I max is emitted which is given
by the following relationship:
(α)= I max cos(α).
8. The semiconductor laser device as claimed in claim 1 ,
wherein a time period within which the semiconductor laser device is switchable from an off state into an on state, and vice versa, is less than 20 ns.
9. A camera for recording three-dimensional images according to the time-of-flight method comprising at least one semiconductor laser device, the semiconductor laser device comprising:
at least one laser diode, and
at least one reflection surface which reflects diffusely and which is irradiated by the at least one laser diode during operation, and
an additional light-nontransmissive housing body having a cutout
wherein
the at least one laser diode is the sole light source of the semiconductor laser device,
the at least one laser diode is mounted immovably relative to the at least one reflection surface,
light emitted by the semiconductor laser device during operation has the same spectral components as, or fewer spectral components than, light emitted by the at least one laser diode,
an interspace between the at least one laser diode and the at least one reflection surface is free of an optical assembly,
a light-emitting area of the semiconductor laser device is greater than a light-emitting area of the at least one laser diode by at least a factor of 100,
the at least one laser diode is fitted in the cutout,
the reflection surface is part of a housing wall of the housing body in the cutout,
the housing body and the reflection surface are formed from a plastic,
the cutout has a side wall and a base surface, and
the laser diode is fitted on the side wall and the reflection surface is situated on the base surface,
wherein the semiconductor laser device is designed to be driven with a clock frequency of at least 20 MHz.
10. The semiconductor laser device as claimed in claim 1 ,
wherein the reflection surface is convexly curved.
11. The semiconductor laser device as claimed in claim 1 ,
wherein a mounting surface of the semiconductor laser device is substantially parallel to the light-emitting area of the semiconductor laser device.
12. The semiconductor laser device as claimed in claim 1 ,
wherein the coherence length of the light emitted by the semiconductor laser device is at most 50 μm.
13. The semiconductor laser device as claimed in claim 1 ,
wherein the emission power of the semiconductor laser device is at most 5 W.
14. The camera as claimed in claim 9 ,
comprising one or more sensors for image detection.
15. A semiconductor laser device for use in image detection comprising:
a laser diode, and
a reflection surface which reflects diffusely and which is irradiated by the laser diode during operation, and
a light-nontransmissive housing body having a cutout
wherein
the laser diode is mounted immovably relative to the reflection surface,
light emitted by the semiconductor laser device during operation has the same spectral components as, or fewer spectral components than, light emitted by the at least one laser diode,
an interspace between the laser diode and the reflection surface is free of an optical assembly,
a light-emitting area of the semiconductor laser device is greater than a light-emitting area of the laser diode by at least a factor of 100,
the laser diode is fitted in the cutout,
the reflection surface is part of a housing wall of the housing body in the cutout,
the housing body and the reflection surface are formed from a plastic,
the cutout has a side wall and a base surface,
the laser diode is fitted on the side wall and the reflection surface is situated on the base surface,
the emission power of the semiconductor laser device is between 50 mW and 2.5 W inclusive, and
the coherence length of the light emitted by the semiconductor laser device is at most 20 μm.