IP Library Granted Patent US 10,211,187
Granted Patent B2
US 10,211,187 · App. 15/326,484 · Granted Feb 19, 2019

Light emitting diodes and reflector

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Quick Facts
Patent No.
US 10,211,187
App. No.
15/326,484
Granted
Feb 19, 2019
Kind
B2
Abstract

A light source includes first and second semiconductor diode structures adapted to generate light, a light output section at least partially overlapping both of the first and the second semiconductor diode structures and being adapted to output light from the first and the second semiconductor diode structures, and a light reflecting structure at least partially enclosing side surfaces of the first and the second semiconductor diode structures and the light output section and being adapted to reflect light from the first and the second semiconductor diode structures towards the light output section. The area of the light output section is less than the combined area of the first and the second semiconductor diode structures.

Claims (30)

1. A light source, comprising:

a substrate;

a first semiconductor diode structure and a second semiconductor diode structure arranged laterally adjacent to each other on the substrate;

a light output section at least partially overlapping the first and the second semiconductor diode structures, the light output section being adapted to output light from the first and the second semiconductor diode structures;

a layer of optical enhancement material between the light output section and at least a portion of the first semiconductor diode structure and a portion of the second semiconductor diode structure, and

a light reflecting structure on the substrate that at least partially encloses the light output section and side surfaces of the first semiconductor diode structure, the second semiconductor diode structure, and the layer of optical enhancement material; the light reflecting structure being in contact with the side surfaces of the first semiconductor diode structure, the second semiconductor diode structure, and the layer of optical enhancement material; the light reflecting structure being in contact with portions of top surfaces of the first semiconductor diode structure, the second semiconductor diode structure, and the layer of optical enhancement material, wherein:

the light reflecting structure is adapted to reflect light from the first and the second semiconductor diode structures towards the light output section,

an area of the light output section in a cross section parallel to the top surfaces of the first and the second semiconductor diode structures is less than combined areas of the top surfaces of the first and the second semiconductor diode structures and less than an area of the layer of optical enhancement material in a cross section parallel to the top surfaces of the first and the second semiconductor diode structures, and

a lateral separation between adjacent edges of the first and the second semiconductor diode structures is less than 10% of a lateral width of at least one of the first and the second semiconductor diode structures.

2. The light source of claim 1 , wherein the light output section comprises an aperture formed in the light reflecting structure.

3. The light source of claim 1 , wherein the layer of optical enhancement material covers the combined areas of the first semiconductor diode structure and the second semiconductor diode structure.

4. The light source of claim 2 , wherein the aperture of the light output section comprises no optical enhancement material.

5. The light source of claim 1 , wherein at least one of the first semiconductor diode structure and the second semiconductor diode structure comprises a pre-structured sapphire LED.

6. The light source of claim 1 , further comprising a reflective coating at least partially overlapping the light reflecting structure.

7. The light source of claim 1 , further comprising an automotive light.

8. The light source of claim 1 , further comprising a projector light.

9. A method of manufacturing a light source, comprising:

arranging a first semiconductor diode structure and a second semiconductor diode structure to be laterally adjacent to each other on a substrate such that there is a lateral separation between adjacent edges of the first and the second semiconductor diode structures is less than 10% of at least one of a lateral width of the first and the second semiconductor diode structures;

forming a layer of optical enhancement material on at least a portion of the first semiconductor diode structure and a portion of the second semiconductor diode structure; and

providing a light reflecting structure on the substrate that (1) covers and contacts portions of top surfaces of the first semiconductor diode structure, the second semiconductor diode structure, and the layer of optical enhancement material to define a light output section and (2) at least partially encloses and contacts sides surfaces of the first semiconductor diode structure, the second semiconductor diode structure, and the layer of optical enhancement material; the light reflecting structure being adapted to reflect light from the first and the second semiconductor diode structures towards the light output section,

wherein an area of the light output section in a cross section parallel to the top surfaces of the first and the second semiconductor diode structures is less than combined areas of the top surfaces of the first and the second semiconductor diode structures and less than an area of the layer of optical enhancement material in a cross section parallel to the top surfaces of the first and the second semiconductor diode structures.

10. The method of claim 9 , wherein the light output section comprises an aperture formed in the light reflecting structure.

11. The method of claim 9 , wherein forming a layer of optical enhancement material includes covering the combined areas of the first semiconductor diode structure and the second semiconductor diode structure.

12. The method of claim 10 , wherein the aperture of the light output section comprises no optical enhancement material.

13. The method of claim 9 , further comprising, providing at least a portion of an automotive light.

14. The method of claim 9 , further comprising, providing at least a portion of a projector light.

15. The method of claim 9 , further comprising, providing at least a portion of a camera flashlight.

16. The method of claim 9 , further comprising, providing at least a portion of a spot light.

17. The light source of claim 1 , further comprising a camera flashlight.

18. The light source of claim 1 , further comprising a spot light.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 10, 2025
From: LUMILEDS LLC
To: LUMILEDS SINGAPORE PTE. LTD.
Reel/Frame 071888/0086 →
RELEASE OF SECURITY INTEREST Recorded Jan 29, 2025
From: SOUND POINT AGENCY LLC
To: LUMILEDS LLC; LUMILEDS HOLDING B.V.
Reel/Frame 070046/0001 →
SECURITY INTEREST Recorded Jan 5, 2023
From: LUMILEDS LLC; LUMILEDS HOLDING B.V.
To: SOUND POINT AGENCY LLC
Reel/Frame 062299/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 9, 2018
From: KONINKLIJKE PHILIPS N.V.
To: LUMILEDS LLC
Reel/Frame 045859/0005 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 31, 2017
From: CROMPVOETS, FLORIS MARIA HERMANSZ; SWEEGERS, NORBERTUS ANTONIUS MARIA; CORNELISSEN, HUGO JOHAN; DE SAMBER, MARC ANDRE
To: KONINKLIJKE PHILIPS N.V.
Reel/Frame 043997/0630 →
SECURITY INTEREST Recorded Jul 7, 2017
From: LUMILEDS LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 043108/0001 →