Thin-film device having barrier film and manufacturing method thereof
A thin-film device includes a resin film which includes a first surface and a second surface facing the first surface, a first inorganic layer on the first surface, a thin-film element on the first inorganic layer, and a second inorganic layer on the second surface, wherein a film density of the second inorganic layer is greater than a film density of the first inorganic layer.
1. A thin-film device, comprising:
a resin film which includes a first surface and a second surface facing the first surface;
a first inorganic layer on the first surface; a thin-film element on the first inorganic layer; and
a second inorganic layer on the second surface,
wherein a film density of the second inorganic layer is greater than a film density of the first inorganic layer, and
wherein an interface between the first inorganic layer and the resin film has a concave-convex structure with a longer concave-convex cycle as compared with a concave-convex structure of an interface between the second inorganic layer and the resin film.
2. The thin-film device according to claim 1 , wherein the second inorganic layer and the resin film are bonded by an adhesive layer.
3. The thin-film device according to claim 1 , wherein the second inorganic layer is any one of a silicon oxide film, a silicon nitride film, a silicon oxy-nitride film, an aluminum oxide film, and a tantalum oxide film.
4. The thin-film device according to claim 1 , wherein the second inorganic layer has a stacked structure including at least two films of a silicon oxide film, a silicon nitride film, a silicon oxy-nitride film, an aluminum oxide film, and a tantalum oxide film.
5. The thin-film device according to claim 3 , wherein the silicon oxide film constituting the second inorganic layer has a film density equal to or greater than 2.25 g/cm 3 .
6. The thin-film device according to claim 3 , wherein the silicon nitride film constituting the second inorganic layer has a film density equal to or greater than 2.70 g/cm 3 .
7. The thin-film device according to claim 1 , wherein a surface layer including germanium is formed on a surface of the second inorganic layer not facing the resin film.
8. The thin-film device according to claim 7 , wherein germanium in the surface layer including germanium is present in a state in which germanium is chemically bonded to oxygen or nitrogen.
9. The thin-film device according to claim 7 , wherein a concentration of germanium in the surface layer including germanium is equal to or greater than 1×10 18 cm −3 .
10. The thin-film device according to claim 1 , wherein a surface layer including molybdenum is formed on a surface of the second inorganic layer not facing the resin film.
11. The thin-film device according to claim 10 , wherein molybdenum in the surface layer including molybdenum is present in a state in which molybdenum is chemically bonded to oxygen or nitrogen.
12. The thin-film device according to claim 10 , wherein a concentration of molybdenum in the surface layer including molybdenum is equal to or greater than 1×10 18 cm −3 .
13. The thin-film device according to claim 1 , wherein the thin-film element is a display element including combination units of an active element and a pixel display unit which are arranged in a matrix shape.
14. The thin-film device according to claim 13 , wherein the pixel display unit is a display element including organic electroluminescence (EL).
15. The thin-film device according to claim 13 , wherein the pixel display unit is a display element including liquid crystal.
16. The thin-film device according to claim 13 , wherein the active element is a thin-film transistor.
17. The thin-film device according to claim 16 , wherein a channel active layer of the thin-film transistor is any one of an oxide semiconductor film, an amorphous silicon film, a polycrystalline silicon film, a microcrystalline silicon film, and an organic semiconductor film.
18. The thin-film device according to claim 1 , wherein the thin-film element is a thin-film solar cell using PIN junction of silicon or a thin-film solar cell including a chalcopyrite-based compound of Cu—In—S (or Se).
19. A thin-film device, comprising:
a resin film which includes a first surface and a second surface facing the first surface;
a first inorganic layer on the first surface;
a thin-film element on the first inorganic layer; and
a second inorganic layer on the second surface,
wherein a film density of the second inorganic layer is greater than a film density of the first inorganic layer,
wherein a surface layer including germanium is formed on a surface of the second inorganic layer not facing the resin film, and
wherein a concentration of germanium in said surface layer including germanium is within a range from 1×10 18 cm −3 to 3×10 21 cm −3 .
20. A thin-film device, comprising:
a resin film which includes a first surface and a second surface facing the first surface;
a first inorganic layer on the first surface;
a thin-film element on the first inorganic layer; and
a second inorganic layer on the second surface,
wherein a film density of the second inorganic layer is greater than a film density of the first inorganic layer,
wherein a surface layer including molybdenum is formed on a surface of the second inorganic layer not facing the resin film, and
wherein a concentration of molybdenum in said surface layer including molybdenum is within a range from 1×10 18 cm −3 to 3×10 21 cm −3 .