Semiconductor device and manufacturing method of a semiconductor device
A manufacturing method of a semiconductor device includes: forming a mark on a surface of a semiconductor wafer, at least a part of the mark being disposed in a planned-peripheral region, the planned-peripheral region being located around a respective planned-element region where a semiconductor element is to be formed; forming the semiconductor element in the planned-element region using the mark; forming a film that extends across a range including the planned-element region or the planned-peripheral region in the surface so as to cover at least a part of the mark with the film, after forming the semiconductor element; and after forming the film, cutting the semiconductor wafer along a dicing region, the dicing region located around the planned-peripheral region.
1. A manufacturing method of a semiconductor device, the manufacturing method comprising:
(a) forming a mark on a surface of a semiconductor wafer, the mark including a material different from a material of the semiconductor wafer, at least a part of the mark being disposed in a range located in a planned-peripheral region in the surface, the planned-peripheral region being located around a respective planned-element region where a semiconductor element is to be formed;
(b) after the step (a), forming the semiconductor element in the planned-element region using the mark;
(c) after the step (b), forming a film that extends across a range including the planned-element region or the planned-peripheral region in the surface so as to cover at least a portion of the mark with the film; and
(d) after the step (c), cutting the semiconductor wafer along a dicing region while at least part of the mark is covered with the film, the dicing region being located around the planned-peripheral region, wherein
the film includes at least one of a protective film formed of a resin material and an electrode film formed of a metallic material,
in the step (c), at least the protective film is formed, and
the step (c) includes:
forming the protective film formed of the resin material across a range extending from the planned-element region through the planned-peripheral region and through the dicing region in the surface of the semiconductor wafer; and
removing a part of the protective film located in the dicing region and a part of the protective film located on the planned-element region after the protective film is formed.
2. The manufacturing method according to claim 1 , wherein
the step (d) includes specifying a position at which the semiconductor element is disposed based on the mark.
3. The manufacturing method according to claim 1 , wherein
the step (c) includes forming the film across the range extending from the planned-element region into the planned-peripheral region.
4. The manufacturing method according to claim 1 , wherein
the resin material is polyimide.
5. The manufacturing method according to claim 1 , further comprising:
(e) before the step (a), determining the planned-element region, the planned-peripheral region, and the dicing region in the semiconductor wafer.