Electrical fuse and/or resistor structures
Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.
1. A structure comprising:
an efuse formed between gate metals in a dielectric material;
the gate metals including a nitride capping material;
the efuse is provided within a recess of the dielectric material; and
the efuse comprises a nitride insulator material and a metal material which is in contact with a contact structure formed in an insulator material above the efuse,
wherein the metal material, the nitride insulator material, and the nitride capping material have surfaces which are planar with one another.
2. A structure comprising:
an efuse formed between gate metals in a dielectric material;
the gate metals including a nitride capping material;
the efuse is provided within a recess of the dielectric material;
the efuse comprises a nitride insulator material and a metal material which is in contact with a contact structure formed in an insulator material above the efuse; and
an oxide insulator material in contact with the metal material, the nitride insulator material, and the nitride capping material.
3. The structure of claim 2 , wherein the contact structure is in direct electrical contact with the metal material.
4. The structure of claim 3 , wherein the contact structure is in an opening of the oxide insulator material.
5. The structure of claim 1 , wherein the gate metals are replacement gate metals.
6. The structure of claim 1 , further comprising an insulator material formed over the metal material.
7. The structure of claim 6 , wherein the insulator material is a nitride material.
8. The structure of claim 7 , wherein the metal material is between the nitride material and the nitride insulator material, and portions of the metal material, the nitride material and the nitride insulator material are planar with one another.
9. The structure of claim 8 , further comprising a contact which extends through an opening of the nitride material and makes direct electrical contact with a surface of the metal material.
10. The structure of claim 9 , wherein an insulator is provided over the nitride material and the contact which extends through an opening of insulator.
11. A structure comprising:
an efuse formed in a recess between a plurality of gate structures;
a first insulator material formed in the recess and below the efuse;
a second insulator material formed in the recess and above the efuse; and
a contact formed through the second insulator material above the efuse and in direct electrical contact with the efuse.
12. The structure of claim 11 , wherein the efuse is a metal material.
13. The structure of claim 12 , wherein the metal material, the first insulator material and the second insulator material are planar with one another.
14. The structure of claim 13 , wherein the first insulator material comprises an oxide insulator material and the second insulator material comprises at least one of a nitride insulator material or an oxide insulator material.