Apparatuses, systems, and methods for ion traps
Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
1. A method of forming an ion trap, comprising:
forming a plurality of trenches below a surface of a substrate, wherein each trench extends from an end of an ion trap die through an ion trap region and each trench extends beyond the ion trap region;
partially filling a lower portion of the plurality of trenches with a first conductive material to operate as output lines for microwave (MW) current that has traveled beyond the ion trap region;
forming a dielectric material above the first conductive material;
forming a via through the dielectric material proximate to a trench beyond the ion trap region; and
forming a plurality of conducting lines above the first conductive material and starting above the substrate at the end of the ion trap die, the plurality of conducting lines configured to receive a current oscillating at a MW frequency.
2. The method of claim 1 , further comprising:
separately connecting the plurality of conducting lines through a second conductive material to an upper surface of the substrate such that the second conductive material fills a remaining upper portion of the plurality of trenches to operate as input lines for the MW current to the ion trap region.
3. The method of claim 1 , further comprising:
connecting a paired input line and output line to the via to enable reversal in a direction of the MW current.
4. The method of claim 3 , further comprising:
reversing the direction of the MW current to enable an output MW current to be connected to at least one of an opposite pole and/or a ground pole of a MW source.
5. The method of claim 2 , further comprising:
forming a third conductive material as a MW shield above an upper surface or below a lower surface of a first planar conductive material at least in the ion trap region.
6. The method of claim 5 , further comprising:
forming the MW shield to have separate portions individually positioned between MW rails and at least one of overlying or nearby radio frequency rails, ground rails, and sequences of direct current electrodes.
7. The method of claim 1 , further comprising:
reducing a diameter and a height above the surface of the substrate of the plurality of conducting lines as the conducting lines transit from the end of the ion trap die to the ion trap region; and
forming paired input lines and output lines in the plurality of trenches that are below a first planar conductive material in the ion trap region to operate as a plurality of MW rails.
8. The method of claim 1 , further comprising:
forming the plurality of trenches into the substrate with a width in a range of from around 10 microns to around 100 microns and a depth in a range of from around 20 microns to around 200 microns.
9. The method of claim 1 , further comprising:
forming the plurality of conducting lines with a diameter in a range of from around 200 microns to around 800 microns above the first conductive material and the dielectric material.