Sensor device with BAW resonator and through-substrate fluidic vias

1. A fluidic device comprising:

a base structure comprising: (i) a substrate; (ii) at least one bulk acoustic wave resonator structure arranged over at least a portion of the substrate, the at least one bulk acoustic wave resonator structure including a piezoelectric material comprising a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of the substrate, a top side electrode arranged over a portion of the piezoelectric material, and a bottom side electrode arranged between the piezoelectric material and the substrate, wherein a portion of the piezoelectric material is arranged between the top side electrode and the bottom side electrode to form an active region; and (iii) a functionalization material arranged over at least a portion of the active region;

a fluidic channel bounded at least in part by the base structure;

at least one fluidic via defined through at least a portion of the base structure including the substrate and in fluid communication with the fluidic channel, wherein the at least one fluidic via extends through the substrate and a thickness of the piezoelectric material, and

wherein the fluidic device has a first surface and a second surface different than the first surface, where the first surface is configured to receive an electrical connection for conductive electrical communication with one or both of the top side electrode and the bottom side electrode, and the second surface defines a fluid port in fluid communication with the fluidic via.

2. The fluidic device of claim 1 , wherein the base structure further comprises a self-assembled monolayer arranged over the active region, wherein the functionalization material comprises a specific binding material arranged over the self-assembled monolayer.

3. The fluidic device of claim 2 , wherein the base structure further comprises an interface layer arranged over at least a portion of the active region, and the self-assembled monolayer is arranged over at least a portion of the interface layer.

4. The fluidic device of claim 3 , wherein the interface layer extends over less than an entirety of the piezoelectric material.

5. The fluidic device of claim 3 , wherein the top side electrode comprises a non-noble metal, and the fluidic device further comprises a hermeticity layer arranged between the interface layer and the top side electrode.

6. The fluidic device of claim 1 , further comprising at least one channel boundary-defining structure arranged over the base structure, wherein the at least one channel boundary-defining structure defines an upper boundary and at least one lateral boundary of the fluidic channel.

7. The fluidic device of claim 6 , wherein the at least one channel boundary-defining structure comprises at least one intermediate structure defining the at least one lateral boundary of the fluidic channel, and comprises a cover defining the upper boundary of the fluidic channel.

8. The fluidic device of claim 1 , wherein the at least one fluidic via comprises a plurality of fluidic vias defined through the at least a portion of the base structure.

9. The fluidic device of claim 1 , wherein the base structure further comprises an acoustic reflector structure arranged between the substrate and the bottom side electrode.

10. The fluidic device of claim 1 , wherein the substrate defines a recess underlying the bottom side electrode and proximate to the active region.

11. The fluidic device of claim 1 , wherein the at least one bulk acoustic wave resonator structure comprises a plurality of bulk acoustic wave resonator structures registered with the fluidic channel.

12. The fluidic device of claim 1 , wherein the functionalization material comprises a non-specific binding material.

13. The fluidic device of claim 1 , further comprising:

a top side arranged closer to the piezoelectric material than to the substrate; and

a bottom side arranged closer to the substrate than to the piezoelectric material;

wherein the electrical connection comprises a first electrical bond pad and a second electrical bond pad arranged along the top side, wherein the first electrical bond pad is in conductive electrical communication with the top side electrode, and the second electrical bond pad is in conductive electrical communication with the bottom side electrode;

wherein the at least one fluidic via extends through the bottom side.

14. A method for biological or chemical sensing, the method comprising:

supplying a fluid containing a target species through the at least one fluidic via into the fluidic channel of the fluidic device according to claim 1 , wherein said supplying is configured to cause at least some of the target species to bind to the functionalization material;

inducing a bulk acoustic wave in the active region; and

sensing a change in at least one of a frequency property, a magnitude property, or a phase property of the at least one bulk acoustic wave resonator structure to indicate at least one of presence or quantity of target species bound to the functionalization material.

15. A method for fabricating a fluidic device comprising at least one bulk acoustic wave resonator structure arranged over at least a portion of a substrate, the at least one bulk acoustic wave resonator structure including a piezoelectric material comprising a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of the substrate, a top side electrode arranged over a portion of the piezoelectric material, and a bottom side electrode arranged between the piezoelectric material and the substrate, wherein a portion of the piezoelectric material is arranged between the top side electrode and the bottom side electrode to form an active region, the method comprising:

defining at least one fluidic via through the substrate and a thickness of the piezoelectric material;

providing at least one functionalization material over at least a portion of the active region; and

arranging at least one channel boundary-defining structure over the at least one bulk acoustic wave resonator structure, wherein the at least one channel boundary-defining structure defines an upper boundary and at least one lateral boundary of a fluidic channel in fluidic communication with the at least one fluidic via, and the active region is arranged along a portion of a lower boundary of the fluidic channel.

16. The method of claim 15 , further comprising forming an interface layer over at least a portion of the active region, forming a self-assembled monolayer over at least a portion of the interface layer, and providing the at least one functionalization material over at least a portion of the self-assembled monolayer, wherein the at least one functionalization material comprises a specific binding material.

17. The method of claim 16 , further comprising forming a hermeticity layer over the top side electrode prior to the forming of the interface layer over at least a portion of the active region.

18. The method of claim 15 , wherein the defining of the at least one fluidic via through the substrate and the piezoelectric material comprises laser micromachining guided by a water jet, deep reactive-ion etching, laser micromachining, chemical dry etching, chemical wet etching, abrasive jet machining, or a combination of two or more of the foregoing processes.

19. The method of claim 15 , wherein the arranging of the at least one channel boundary-defining structure over the at least one bulk acoustic wave resonator structure is performed prior to the providing of the at least one functionalization material over at least a portion of the active region.