MULTILAYER THIN FILM DEVICE ENCAPSULATION USING SOFT AND PLIABLE LAYER FIRST
A thin film device. The thin film device may include: an active device region, the active device region comprising a diffusant; and a thin film encapsulant disposed adjacent to the active device region and encapsulating at least a portion of the active device region, the thin film encapsulant comprising: a first layer, the first layer disposed immediately adjacent the active device region and comprising a soft and pliable material; and a second layer disposed on the first layer, the second layer comprising a rigid dielectric material or rigid metal material.
1 . A thin film device, comprising:
an active device region, the active device region comprising a diffusant; and
a thin film encapsulant disposed adjacent to the active device region and encapsulating at least a portion of the active device region, the thin film encapsulant comprising:
a first layer, the first layer disposed immediately adjacent the active device region and comprising a soft and pliable material; and
a second layer disposed on the first layer, the second layer comprising a rigid dielectric material or rigid metal material.
2 . The thin film device of claim 1 , wherein the active device region comprises:
a source region comprising the diffusant; and
a selective expansion region, the selective expansion region being disposed immediately adjacent the first layer, wherein transport of the diffusant takes place reversibly between the source region and the selective expansion region.
3 . The thin film device of claim 2 , wherein the source region comprises a solid state cathode, and wherein the selective expansion region comprises an anode.
4 . The thin film device of claim 3 , wherein the thin film encapsulant comprises a first thickness in a first device state and a second thickness in a second device state, wherein the anode comprises a third thickness in the first device state and a fourth thickness in the second device state, wherein the third thickness is less than the fourth thickness by at least 1 um.
5 . The thin film device of claim 4 , wherein a sum of the first thickness and third thickness differs by 10% or less from a sum of the second thickness and fourth thickness.
6 . The thin film device of claim 1 , wherein the first layer comprises a polymer layer, the polymer layer further comprising a polymer layer stack including at least one sub-layer.
7 . The thin film device of claim 1 , the first layer comprising at least one of: a getter/absorbent infused silicone, a porous low dielectric constant material, a silver paste, and epoxy, a printed circuit board material, a photo-resist material, silicone, rubber, urethane, polyurethane, polyurea, polytetrafluoroethylene, parylene, polypropylene, polystyrene, polyimide, nylon, acetal, ultem, acrylic, epoxy, and phenolic a polymer, or combination thereof.
8 . The thin film device of claim 1 , the first layer and the second layer together forming a first dyad, wherein the thin film encapsulant comprises at least one additional dyad, the at least one additional dyad being disposed on the first dyad.
9 . The thin film device of claim 8 , wherein the first layer of the first dyad comprises a first soft and pliable layer, the first soft and pliable layer having a first layer thickness and further comprising at least one sub-layer, wherein a second dyad is disposed on the first dyad and includes a second soft and pliable layer having a second layer thickness, wherein the pliable layer thickness is less than the first layer thickness.
10 . The thin film device of claim 1 , wherein the second layer comprises a diffusion barrier layer, the diffusion barrier layer preventing moisture and gas diffusion through the thin film encapsulant.
11 . The thin film device of claim 1 , wherein the second layer comprises silicon nitride, Cu, or Al.
12 . The thin film device of claim 1 , wherein the second layer comprises a thickness of 0.25 μm to 5 μm.
13 . The thin film device of claim 1 , wherein the first layer and second layer together constitute a dyad, wherein the thin film encapsulant comprises a plurality of dyads, wherein the first layer comprises at least one sub-layer.
14 . The thin film device of claim 1 , further comprising a substrate base, wherein the active device region and the thin film encapsulant are disposed on the substrate base, wherein the active device region and thin film encapsulant together form a device stack, wherein a thickness of the device stack is 120 μm or less.
15 . A thin film battery, comprising:
an active device region, the active device region comprising:
a lithium-containing cathode; and
a solid state electrolyte, disposed on the cathode;
an anode disposed on the solid state electrolyte; and
a thin film encapsulant disposed adjacent to the anode and encapsulating at least a portion of the lithium-containing cathode, the solid state electrolyte, and the anode, the thin film encapsulant comprising:
a first layer, the first layer disposed immediately adjacent the active device region and comprising a soft and pliable material; and
a second layer disposed on the first layer, the second layer comprising a rigid dielectric material or rigid metal material.
16 . The thin film battery of claim 15 , wherein the thin film encapsulant comprises a layer absorbent to laser radiation over a wavelength range of 157 nm to 1064 nm.
17 . The thin film battery of claim 15 , the first layer comprising at least one of: a getter/absorbent infused silicone, a a porous low dielectric constant material, a silver paste, and epoxy, a printed circuit board material, a photo-resist material, silicone, rubber, urethane, polyurethane, polyurea, polytetrafluoroethylene, parylene, polypropylene, polystyrene, polyimide, nylon, acetal, ultem, acrylic, epoxy, and phenolic a polymer, or combination thereof.
18 . The thin film battery of claim 15 , the first layer and the second layer together forming a first dyad, wherein the thin film encapsulant comprises at least one additional dyad, the at least one additional dyad being disposed on the first dyad.
19 . The thin film battery of claim 18 , wherein the first layer of the first dyad comprises a first soft and pliable layer, the first soft and pliable layer having a first layer thickness, wherein a second dyad is disposed on the first dyad and includes a second soft and pliable layer having a second layer thickness, wherein the second layer thickness is less than the first layer thickness.
20 . The thin film battery of claim 18 , further comprising a substrate base, wherein the lithium-containing cathode, the solid state electrolyte, and the anode comprise an active device region, wherein the active device region and the thin film encapsulant are disposed on the substrate base, wherein the first layer comprises a thickness of between 30 μm and 50 μm, wherein a thickness of the second layer is 5 μm or less, wherein the active device region and thin film encapsulant together form a device stack, and wherein a thickness of the device stack is between 50 μm and 80 μm.