THIN FILM BATTERY DEVICE AND METHOD OF FORMATION

1 . A thin film battery, comprising:

a contact layer, the contact layer disposed in a first plane and comprising a cathode current collector and an anode current collector pad;

a device stack disposed on the cathode current collector, the device stack comprising a cathode and solid state electrolyte;

an anode current collector disposed on the device stack; and

a thin film encapsulant, the thin film encapsulant disposed over the device stack, wherein the solid state electrolyte encapsulates the cathode.

2 . The thin film battery of claim 1 , wherein the thin film encapsulant comprises at least one dyad, wherein a dyad of the at least one dyad comprises:

a polymer layer; and

a rigid dielectric layer disposed adjacent the polymer layer, wherein the polymer layer and the rigid dielectric layer extend in a non-planar fashion along a surface of the anode current collector and along a side of the device stack.

3 . The thin film battery of claim 2 wherein the polymer layer comprises a soft and pliable polymer

4 . The thin film battery of claim 3 , wherein the anode current collector comprises a layer thickness of 1 μm to 10 μm.

5 . The thin film battery of claim 1 , wherein the cathode comprises a lithium containing material.

6 . The thin film battery of claim 1 further comprising a substrate, the substrate disposed adjacent the cathode current collector in a first region and adjacent the anode current collector pad in a second region and adjacent the solid state electrolyte in a third region.

7 . The thin film battery of claim 1 , wherein an exposed region of the cathode current collector comprises a thin interconnect strip.

8 . The thin film battery of claim 1 , wherein the device stack further comprises an anode region, disposed between the solid state electrolyte and anode current collector.

9 . The thin film battery of claim 1 , wherein the thin film encapsulant encapsulates a first side of the device stack, wherein the anode current collector encapsulates the device stack along a second side; and wherein the anode current collector is in electrical contact with the anode current collector pad.

10 . The thin film battery of claim 2 , wherein the thin film encapsulant comprises:

a first polymer layer, the first polymer layer disposed on the anode current collector;

a rigid metal layer disposed on the first polymer layer; and

the at least one dyad, the at least one dyad disposed on the rigid metal layer, and arranged wherein a first rigid dielectric layer of the at least one dyad is disposed in contact with the rigid metal layer, and wherein a second polymer layer of the at least one dyad is disposed over the first rigid dielectric layer.

11 . A method of forming a thin film battery, comprising:

depositing a contact layer on a substrate;

forming a device stack over the contact layer, the device stack comprising a cathode, a solid state electrolyte and an anode current collector, wherein the solid state electrolyte encapsulates the cathode; and

forming a thin film encapsulant on the substrate after the forming the device stack.

12 . The method of claim 11 , wherein the forming the device stack comprises:

depositing a cathode layer on the contact layer;

patterning the contact layer and the cathode layer, wherein the substrate is exposed, and wherein the contact layer forms a cathode current collector and an anode current collector pad, and the cathode layer forms the cathode;

depositing a solid state electrolyte layer on the cathode;

patterning the solid state electrolyte layer to expose the anode current collector pad;

depositing an anode current collector layer on the substrate; and

patterning the anode current collector layer and the solid state electrolyte layer, wherein the cathode current collector is exposed in a first region, wherein the patterning the contact layer and the cathode, the solid state electrolyte, and the anode current collector, comprise laser etching select portions of the contact layer and the cathode, the solid state electrolyte, and the anode current collector.

13 . The method of claim 12 , wherein the forming the thin film encapsulant comprises:

depositing a polymer layer on the substrate; and

and patterning the polymer layer to form a patterned polymer layer, wherein the cathode current collector is exposed in a first region and the anode current collector is exposed in a second region.

14 . The method of claim 13 , further comprising:

depositing a rigid dielectric layer on the patterned polymer layer; and

depositing a second polymer layer on the rigid dielectric layer; and

patterning the rigid dielectric layer and the second polymer layer, wherein the cathode current collector is exposed in a first inner region, wherein the anode current collector is exposed in a second inner region, the first inner region being disposed within the first region, and the second inner region being disposed in the second region.

15 . The method of claim 14 , further comprising after the patterning the rigid dielectric layer and the second polymer layer:

depositing an additional rigid dielectric layer on the second polymer layer; and

patterning the additional rigid dielectric layer, wherein the cathode is exposed in a third inner region, the third inner region being disposed within the first region, and wherein the anode current collector is exposed in a fourth inner region, the fourth inner region being disposed in the second region, wherein the patterning the polymer layer, the rigid dielectric layer, the second polymer layer, and the additional rigid dielectric layer comprise laser etching select portions of the polymer layer, the rigid dielectric layer, the second polymer layer, and the additional rigid dielectric layer.

16 . The method of claim 11 , wherein the anode current collector comprises a layer thickness of 1 μm to 10 μm.

17 . The method of claim 12 , wherein the first region of the cathode current collector comprises a thin interconnect strip.

18 . The method of claim 12 , wherein the patterning the contact layer and the cathode layer comprises patterning the cathode layer in a first operation and patterning the contact layer in a second operation, subsequent to the first operation.

19 . A method of forming a thin film battery, comprising:

depositing a contact layer on a substrate and depositing a cathode layer on the contact layer;

patterning the contact layer and the cathode layer, wherein the substrate is exposed, and wherein the contact layer forms a cathode current collector and an anode current collector pad, and the cathode layer forms a cathode;

depositing a solid state electrolyte layer on the substrate after the patterning the contact layer and the cathode layer;

patterning the solid state electrolyte layer, wherein the anode current collector pad is exposed;

depositing an anode current collector layer on the substrate after the patterning the solid state electrolyte layer;

patterning the anode current collector layer and the solid state electrolyte layer, wherein the cathode current collector is exposed;

depositing a polymer layer on the substrate after the patterning the anode current collector layer and the solid state electrolyte layer;

and patterning the polymer layer to form a patterned polymer layer, wherein the cathode current collector is exposed in a first region.

20 . The method of claim 19 , further comprising:

depositing a rigid metal layer on the patterned polymer layer;

patterning the rigid metal layer to and the patterned polymer layer, wherein a patterned rigid metal layer is formed, and wherein the anode current collector layer is exposed in a second region;

depositing at least one dyad on the patterned rigid metal layer, wherein the at least one dyad comprises a rigid dielectric layer and a second polymer layer disposed on the rigid dielectric layer; and

patterning the at least one dyad, wherein the cathode current collector is exposed in a first inner region, wherein the anode current collector is exposed in a second inner region, the first inner region being disposed within the first region, and the second inner region being disposed in the second region.