METHOD FOR PRODUCING SILICON-INGOTS
Method for producing silicon-ingots ( 1 ) including the following steps: providing a silicon melt ( 3 ), growing a block ( 2 ) of silicon from the silicon melt ( 3 ), the block ( 2 ) having a predetermined crystal orientation, cutting the block ( 2 ) along at least one cutting plane ( 16, 17, 18 ) into a number of silicon-ingots ( 1 ).
1 . A silicon block comprising:
a length of at least 400 mm measured in a growth direction; and
a cross sectional area of at least 320 mm×320 mm, wherein silicon of the block has an interstitial oxygen content of less than 5×10 16 atoms per cm 3 , wherein the silicon of the block has a nitrogen content of less than 1×10 15 atoms per cm 3 .
2 . A silicon block according to claim 1 , wherein the growth direction is parallel to one of the following directions: <100>, <110> and <111>.
3 . A silicon block according to claim 1 , wherein side faces of the block have normals which are oriented parallel to one of the following directions: <100>, <110> and <111>.
4 . A silicon block according to claim 1 , wherein said length measured in said growth direction is an integer multiple of 156 mm.
5 . A silicon block according to claim 1 , wherein said block displays a monocrystalline structure in at least 50% of its volume.
6 . A silicon block according to claim 1 , wherein said block has a constant density of dislocations along its entire growth direction.
7 . A silicon block according to claim 6 , wherein said dislocation density is less than 10 −4 cm −2 .
8 . A silicon block according to claim 1 , wherein the block has a rectangular cross section.
9 . A silicon block according to claim 8 , wherein a side length of said cross section is an integer multiple of 156 mm.
10 . A silicon block according to claim 9 , wherein another side length of said cross section is around 500 mm.
11 . A silicon block comprising:
a block structure comprising silicon, a length of at least 400 mm measured in a grow direction and a cross sectional area of at least 320 mm×320 mm, said silicon having an interstitial oxygen content of less than 5×10 16 atoms per cm 3 and a nitrogen content of less than 1×10 15 atoms per cm 3 .
12 . A silicon block according to claim 11 , wherein the growth direction is parallel to one of the following directions: <100>, <110> and <111>.
13 . A silicon block according to claim 11 , wherein side faces of the block have normals which are oriented parallel to one of the following directions: <100>, <110> and <111>.
14 . A silicon block according to claim 11 , wherein said length measured in said growth direction is an integer multiple of 156 mm.
15 . A silicon block according to claim 11 , wherein said block displays a monocrystalline structure in at least 50% of its volume.
16 . A silicon block according to claim 11 , wherein said block has a constant density of dislocations along its entire growth direction.
17 . A silicon block according to claim 16 , wherein said dislocation density is less than 10 −4 cm −2 .
18 . A silicon block according to claim 11 , wherein the block has a rectangular cross section.
19 . A silicon block according to claim 18 , wherein a side length of said cross section is an integer multiple of 156 mm.
20 . A silicon block according to claim 19 , wherein another side length of said cross section is around 500 mm.