Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device which includes a first member and a second member joined to the first member includes: a) producing (Cu,Ni) 6 Sn 5 on a Ni film formed on the first member by melting a first Sn—Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the first member; b) producing (Cu,Ni) 6 Sn 5 on a Ni film formed on the second member by melting a second Sn—Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the second member; and c) joining the first member and the second member to each other by melting the first Sn—Cu solder having undergone step a) and the second Sn—Cu solder having undergone step b) so that the first Sn—Cu solder and the second Sn—Cu solder become integrated.
1. A method of manufacturing a semiconductor device which includes a first member and a second member joined to the first member, the method comprising:
a) producing (Cu,Ni) 6 Sn 5 on a Ni film formed on the first member by melting a first Sn—Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the first member;
b) producing (Cu,Ni) 6 Sn 5 on a Ni film formed on the second member by melting a second Sn—Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the second member, the second Sn—Cu solder being physically separated from the first Sn—Cu solder; and
c) after the steps a) and b) have been completed so that (i) the (Cu,Ni) 6 Sn 5 has been produced from the first Sn—Cu solder on the Ni film of the first member and (ii) the (Cu,Ni) 6 Sn 5 has been produced from the second Sn—Cu solder on the Ni film of the second member, and the second Sn—Cu solder still is physically separated from the first Sn—Cu solder, joining the first member and the second member to each other by melting the first Sn—Cu solder having undergone step a) and by melting the second Sn—Cu solder having undergone step b) so that the first Sn—Cu solder and the second Sn—Cu solder become integrated.
2. The method according to claim 1 , wherein
a period of time in which the first Sn—Cu solder and the second Sn—Cu solder are melted in step c) is shorter than a period of time in which the first Sn—Cu solder is melted in step a) and is shorter than a period of time in which the second Sn—Cu solder is melted in step b).
3. The method according to claim 1 , wherein
at least one of the first Sn—Cu solder or the second Sn—Cu solder contains 1.6 wt % or higher of Cu.
4. The method according to claim 1 , wherein
at least one of the first member or the second member is a power semiconductor element.
5. The method according to claim 1 , wherein
step a) and step b) are performed simultaneously.
6. The method according to claim 1 , wherein
step a) and step b) are performed at different times.
7. The method according to claim 1 , wherein
the first Sn—Cu solder and the second Sn—Cu solder contain no more than 3.2 wt % of the Cu.
8. A method of manufacturing a semiconductor device which includes a first member and a second member joined to the first member, the method comprising:
a) producing (Cu,Ni) 6 Sn 5 on a Ni film formed on the first member by melting a first unit of Sn—Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the first member;
b) producing (Cu,Ni) 6 Sn 5 on a Ni film formed on the second member by melting a second unit of Sn—Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the second member, the second unit of Sn—Cu solder being physically separated from the first unit of Sn—Cu solder; and
c) after the steps a) and b) have been completed so that (i) the (Cu,Ni) 6 Sn 5 has been produced from the first unit of Sn—Cu solder on the Ni film of the first member and (ii) the (Cu,Ni) 6 Sn 5 has been produced from the second unit of Sn—Cu solder on the Ni film of the second member, and the second unit of Sn—Cu solder still is physically separated from the first unit of Sn—Cu solder, joining the first member and the second member to each other by melting the first unit of Sn—Cu solder having undergone step a) and by melting the second unit of Sn—Cu solder having undergone step b) so that the first unit of Sn—Cu solder and the second unit of Sn—Cu solder become integrated into a single unit.
9. The method according to claim 8 , wherein
a period of time in which the first unit of Sn—Cu solder and the second unit of Sn—Cu solder are melted in step c) is shorter than a period of time in which the first unit of Sn—Cu solder is melted in step a) and is shorter than a period of time in which the second unit of Sn—Cu solder is melted in step b).
10. The method according to claim 8 , wherein
at least one of the first unit of Sn—Cu solder or the second unit of Sn—Cu solder contains 1.6 wt % or higher of Cu.
11. The method according to claim 8 , wherein
at least one of the first member or the second member is a power semiconductor element.
12. The method according to claim 8 , wherein
step a) and step b) are performed simultaneously.
13. The method according to claim 8 , wherein
step a) and step b) are performed at different times.
14. The method according to claim 8 , wherein
the first unit of Sn—Cu solder and the second unit of Sn—Cu solder contain no more than 3.2 wt % of the Cu.