APPARATUS AND METHOD FOR IMPROVING EFFICIENCY OF THIN-FILM PHOTOVOLTAIC DEVICES
A method for producing, apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.
1 . A method for producing semiconductor thin-film layers in a photovoltaic device which comprises:
forming a thin-film semiconductor layers over a substrate; and
applying a first halide heat treatment on at least one thin-film layer surface adjacent to or part of the semiconductor layers, wherein the first halide heat treatment comprises:
applying first coating of a halide compound on the at least one surface adjacent to or part of the semiconductor layers;
performing a first heating of the surface after applying the first coating of the halide compound;
applying a second coating of the halide compound on the same surface; and
performing at least a second heating of the surface after applying the second coating of the halide compound.
2 . The method of claim 1 , wherein forming a thin film semiconductor layers comprises:
forming a semiconductor window layer on the substrate; and
forming a semiconductor absorber layer on the semiconductor window layer.
3 . The method of claim 2 , wherein the first halide heat treatment is applied on an open surface of the semiconductor absorber layer after it is deposited on the semiconductor window layer.
4 . The method of claim 2 , wherein the halide compound is at least one of CdCl 2 , MnCl 2 , MgCl 2 , ZnCl 2 , NH4Cl, TeCl 4 , HCl, or NaCl.
5 . The method of claim 2 , wherein the temperatures of the first and second heatings of the halide coated surface are between about 300° C. to about 600° C.
6 . The method of claim 2 , wherein the durations of the first and second heatings of the halide coated surface are between about 10 minutes to about 60 minutes.
7 . The method of claim 2 , wherein the first and second heatings of the surface comprise flowing a gas at the surface being heated to control the ambient conditions around the surface during the heatings.
8 . The method of claim 7 , wherein the gas comprises at least an oxygen containing gas, a sulfur containing gas, or an inert gas.
9 . The method of claim 2 further comprises:
applying a first pre-coating of the halide compound on the at least one surface adjacent to or part of the semiconductor layers.
10 . The method of claim 9 , wherein the first pre-coating of the halide compound is applied on an open surface of the semiconductor window layer after it is deposited on the substrate and before the semiconductor absorber layer is deposited; and
wherein the halide heat treatment is applied on the open surface of the semiconductor absorber layer after it is deposited on the semiconductor window layer.
11 . The method of claim 9 , wherein the first pre-coating of the halide compound is applied on an open surface of the substrate before the semiconductor window layer and the semiconductor absorber layer are deposited; and
wherein the halide heat treatment is applied on the open surface of the semiconductor absorber layer after it is deposited on the semiconductor window layer.
12 . The method of claim 9 further comprises:
applying a second pre-coating of the halide compound on the at least one surface adjacent to or part of the semiconductor layers.
13 . The method of claim 12 , wherein the first pre-coating of the halide compound is applied on an open surface of the substrate before the semiconductor window layer and the semiconductor absorber layer are deposited;
wherein the second pre-coating of the halide compound is applied on an open surface of the semiconductor window layer after it is deposited on the substrate and before the semiconductor absorber layer is deposited; and
wherein the halide heat treatment is applied on the open surface of the semiconductor absorber layer after it is deposited on the semiconductor window layer.
14 . The method of claim 2 , wherein forming thin film semiconductor layers comprises:
forming a semiconductor window layer over the substrate;
forming a first semiconductor absorber layer on the semiconductor window layer; and
forming a second semiconductor absorber layer on the first semiconductor absorber layer.
15 . The method of claim 14 further comprising:
applying a first pre-coating of the halide compound on the at least one surface adjacent to or part of the semiconductor layers; and
applying a second pre-coating of the halide compound on the at least one surface adjacent to or part of the semiconductor layers.
16 . An apparatus for forming halide treated semiconductor layers in a photovoltaic device comprising:
a halide heat treatment system for treating a surface of a deposited thin film layer, wherein the halide heat treatment system comprises:
a first halide application module for applying a first coating of halide compound on a surface of a thin-film layer;
a first heating module coupled to the first halide application module for heating the halide coated surface of the thin-film layer;
a second halide application module coupled to the first heating module for applying a second coating of halide compound on the surface of the thin-film layer; and
a second heating module coupled to the second halide application module for heating the halide coated surface of the thin-film layer.
17 . The apparatus of claim 16 , further comprising a first deposition system coupled to the halide heat treatment system for forming a semiconductor thin-film layer.
18 . The apparatus of claim 17 further comprising a conveyor system for transporting a substrate through the halide heat treatment system and the first deposition system.
19 . The apparatus of claim 18 , wherein the first halide application module comprises a first halide dispenser for applying the first coating of halide compound on the surface of the thin-film layer and the second halide application module comprises a second halide dispenser for applying the second coating of halide compound on the surface of the thin-film layer.
20 . The apparatus of claim 18 , wherein the first heating module comprises a first heater for heating the halide coated surface of the thin-film layer and the second heating module comprises a second heater for heating the halide coated surface of the thin-film layer.
21 . The apparatus of claim 20 , wherein the first heating module further comprises a first gas injection port for directing a gas around the halide coated surface of the thin-film layer during heating and the second heating module further comprises a second gas injection port for directing a gas around the halide coated surface of the thin-film layer during heating.
22 . The apparatus of claim 21 further comprising a gas curtain system for providing inert gas curtains around the first and second heating modules to maintain the ambient conditions in the first and second heating modules.
23 . The apparatus of claim 18 further comprising a second deposition system coupled to the halide heat treatment system for forming a semiconductor thin-film layer,
wherein the first deposition system is couple to the first halide application module for forming a semiconductor thin film layer to be treated by the halide heat treatment system; and
wherein the second deposition system is coupled to the second heating module for forming a semiconductor thin-film layer over a surface that has been treated by the halide heat treatment system.
24 . A photovoltaic device comprising:
a substrate;
at least a first semiconductor layer deposited adjacent to the substrate;
an annealed first halide coating on a surface of the first semiconductor layer; and
an annealed second halide coating on the surface of the first semiconductor layer.
25 . The photovoltaic device of claim 24 further comprising a TCO layer deposited on the substrate, wherein the first semiconductor layer is deposited on the TCO layer.
26 . The photovoltaic device of claim 25 , wherein the first semiconductor layer has a grain size greater than or equal to 2 μm.
27 . The photovoltaic device of claim 25 , wherein the first semiconductor layer is a cadmium telluride layer.
28 . The photovoltaic device of claim 27 , wherein the halide coatings are at least one of CdCl 2 , MnCl 2 , MgCl 2 , ZnCl 2 , NH4Cl, TeCl 4 , HCl or NaCl.
29 . The photovoltaic device of claim 24 further comprising a second semiconductor layer deposited on the first semiconductor layer.
30 . The photovoltaic device of claim 29 , wherein the first semiconductor layer is a cadmium sulfide layer and the second semiconductor layer is a cadmium telluride layer.