Double-side process silicon MOS and passive devices for RF front-end modules

1. An integrated circuit, comprising:

a first semiconductor substrate having a first surface and a second surface that is opposite to the first surface;

one or more first trenches extending into the first semiconductor substrate from the first surface, the first trenches being characterized by a first depth;

one or more second trenches extending into the first semiconductor substrate from the first surface, the second trenches being characterized by a second depth greater than the first depth;

a thinned semiconductor region with a first recessed region extending in the first semiconductor substrate from the second surface, the thinned semiconductor region being characterized by a first thickness;

a second recessed region in the first semiconductor substrate extending from the second surface to the first surface; and

a bulk dielectric layer covering the second surface of the first semiconductor substrate.

2. The integrated circuit of claim 1 , further comprising a carrier substrate bonded to a second dielectric layer on the first surface of the first semiconductor substrate.

3. The integrated circuit of claim 1 , wherein the bulk dielectric layer is in contact with the one or more second trenches to form a first active region isolated by dielectrics on sidewalls and at a bottom.

4. The integrated circuit of claim 3 , further comprising a laterally-diffused MOS transistor in the first active region.

5. The integrated circuit of claim 1 , wherein the bulk dielectric layer comprises:

a first protruding portion extending into the first recessed region; and

a second protruding portion extending into the second recessed region.

6. The integrated circuit of claim 5 , wherein the first protruding portion of the bulk dielectric layer is in contact with the one or more first trenches in the thinned semiconductor region to form a second active region isolated by dielectrics on sidewalls and at a bottom.

7. The integrated circuit of claim 5 , further comprising a fully depleted silicon on insulator (SOI) transistor in the second active region.

8. The integrated circuit of claim 5 , further comprising one or more conductive vias extending through the second protruding portion of the bulk dielectric layer.

9. The integrated circuit of claim 8 , further comprising one or more of an integrated capacitor and one or more of an integrated inductor disposed on the second surface of the first semiconductor substrate.

10. The integrated circuit of claim 8 , further comprising one or more MEMS (micro-mechanical-electrical-system) devices disposed on the second surface of the substrate.

11. The integrated circuit of claim 9 , further comprising an interconnect structure for coupling the one or more of the integrated capacitor and the one or more of the integrated inductor to one or more components on the first surface of the substrate through one or more conductive vias disposed in the second protruding portion of the bulk dielectric layer.

12. The integrated circuit of claim 11 , further comprising an interconnect structure for coupling the one or more of the MEMS devices to one or more components on the first surface of the first semiconductor substrate through one or more conductive vias disposed in the second protruding portion of the dielectric layer.