Use of heteroleptic indium hydroxides as precursors for INP nanocrystals

1. A method for preparing a compound of formula I:

X 1 —(O 2 CCH 3 ) 2 OH  (I)

wherein X 1 is B, Al, Ga, In, or Tl;

the method comprising:

(1) reacting:

X 1 —(O 2 CCH 3 ) 3-n (OH) n

wherein 0<n≤1; with an organic solvent and water; and

(2) drying at a temperature between about 10° C. and about 80° C.

2. The method of claim 1 , wherein 0<n<1.

3. The method of claim 1 , wherein the organic solvent is selected from the group consisting of methyl acetate, ethyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, acetone, methyl ethyl ketone, methyl isobutyl ketone, tetrahydrofuran, 2-methyltetrahydrofuran, acetonitrile, methyl t-butyl ether, diethyl ether, dibutyl ether, cyclopentyl methyl ether, anisole, toluene, xylene, heptanes, and mixtures thereof.

4. The method of claim 1 , wherein the temperature is between about 20° C. and about 60° C.

5. The method of claim 1 , wherein X 1 is In.

6. The method of claim 1 , wherein X 1 is In, the organic solvent is diethyl ether, the temperature is between about 35° C. and about 45° C., and the drying is for a time between about 1 hour and about about 15 hours.

7. A method of preparing a compound of formula III:

X 1 —(O 2 C(CH 2 ) b CH 3 ) 3-c (OH) c   (III)

wherein:

X 1 is B, Al, Ga, In, or Tl;

b is between 7 and 19; and

c is 1 or 2;

the method comprising reacting:

(1) a compound of formula IV:

X 1 —(OH) a (O 2 CCH 3 ) 3-a   (IV)

wherein:

X 1 is B, Al, Ga, In, or Tl; and

a is 1 or 2;

(2) with a compound of formula V:

wherein:

b is between 7 and 19.

8. The method of claim 7 , wherein X 1 is In.

9. The method of claim 7 , wherein c is 2.

10. The method of claim 7 , wherein b is between 7 and 12.

11. The method of claim 7 , wherein the molar ratio of the compound of formula (IV) to the compound of formula (V) is between about 1:2.0 to about 1:2.8.

12. The method of claim 7 , wherein X 1 is In, b is 10, c is 2, and wherein the molar ratio of the compound of formula (IV) to the compound of formula (V) is between about 1:2.0 to about 1:2.2.

13. A method for production of a Group III-V nanostructure, the method comprising:

(a) providing a Group III precursor prepared by the method of claim 7 ;

(b) providing a Group V precursor comprising a Group V atom; and

reacting the Group III and the Group V precursor to produce the nanostructure.

14. The method of claim 13 , wherein the Group V precursor comprises a Group V atom substituted with an acyl group.

15. The method of claim 13 , wherein the Group V precursor is a triacylphosphine.

16. The method of claim 13 , wherein the Group V precursor comprises a Group V atom substituted with three unsaturated groups.

17. The method of claim 13 , wherein the Group V precursor is tris(trimethylsilyl)phosphine.

18. A composition comprising:

a Group V precursor comprising a Group V atom;

a Group III precursor, wherein the Group III precursor is a compound of formula (III):

X 1 —(O 2 C(CH 2 ) b CH 3 ) 3-c (OH) c   (III)

wherein:

X 1 is B, Al, Ga, In, or Tl;

b is between 7 and 19; and

c is 1 or 2; and

one or more nanostructures comprising the Group III atom and the Group V atom.

19. The composition of claim 18 , wherein the Group V precursor comprises a tris(trialkylsilyl) substituted Group V atom.

20. The composition of claim 18 , wherein the Group V precursor is tris(trimethylsilyl)phosphine.

21. The composition of claim 18 , wherein X 1 is In.

22. The composition of claim 18 , wherein c is 2.

23. The composition of claim 18 , wherein b is between 7 and 12.

24. The composition of claim 18 , wherein X 1 is In, c is 2, and b is 10.