IP Library Granted Patent US 9,921,620
Granted Patent B2
US 9,921,620 · App. 15/348,946 · Granted Mar 20, 2018

Method for manufacturing housing

Inventors: Shyan-Juh Liu (New Taipei, TW); Kar-Wai Hon (New Taipei, TW); Sha-Sha Liu (Shenzhen, CN)
Assignees: Fu Tai Hua Industry (Shenzhen) Co., Ltd.; HON HAI PRECISION INDUSTRY CO., LTD.
G06F1/20G03F7/20G03F7/42H05K5/0213H05K7/20409
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Quick Facts
Patent No.
US 9,921,620
App. No.
15/348,946
Granted
Mar 20, 2018
Kind
B2
Abstract

A method for manufacturing a housing of an electronic device includes the following steps. An area not to be etched is shielded and an etching area is exposed. The etching area is etched by photolithography and forming a plurality of heat dissipation holes of nanometer scale in the etching area. The area not to be etched is cleaned for removing the shielding.

Claims (22)

1. A method for manufacturing a housing of an electronic device containing at least one heat generating member, the housing comprising an etching area and an area not to be etched, comprising:

shielding the area not to be etched by shielding ink;

leaving the etching area exposed;

forming a plurality of preset nano patterns in the etching area by nano-imprint or nanosphere lithography;

etching the etching area and forming a plurality of heat dissipation holes of nanometer scale in the etching area; and

cleaning the area not to be etched to remove the shielding ink;

wherein the plurality of dissipation holes extends from an outer surface of the etching area toward the at least one heat-generating member, a cross-sectional shape of each dissipation hole is substantially perpendicular to an axis of the dissipation hole, and a plurality of echelons protrudes from an edge of a substantially circular dissipation area.

2. The manufacturing method of claim 1 , wherein the heat dissipation holes are blind holes.

3. The manufacturing method of claim 1 , wherein a hole diameter of each heat dissipation hole is from about 10 to 100 nanometers, the ratio of a diameter of each heat dissipation hole to a depth of each heat dissipation hole is in a range from about 1:2 to about 1:10.

4. The manufacturing method of claim 1 , wherein the heat dissipation holes are formed by chemical etching, or plasma etching, or reactive ion etching.

5. The manufacturing method of claim 1 , wherein the method further comprising cleaning the housing before shielding the area not to be etched and exposing the etching area.

6. The manufacturing method of claim 1 , wherein the shielding ink is selected from ultra violet curing ink and thermoset ink.

7. A method for manufacturing a housing of an electronic device containing at least one heat generating member, the housing comprising an etching area and an area not to be etched, comprising:

shielding the area not to be etched by shielding ink and exposing the etching area;

forming a plurality of preset nano patterns in the etching area by nano-imprint or nanosphere lithography;

etching the etching area and forming a plurality of heat dissipation holes of nanometer scale in the etching area; and

cleaning the area not to be etched to remove the shielding ink,

wherein the plurality of heat dissipation holes is defined in an outer surface of a dissipation area, and each heat dissipation hole is in a nanometer scale, the plurality of heat dissipation holes is blind holes, a ratio of a diameter of each heat dissipation hole to a depth of each heat dissipation hole is in a range from about 1:2 to about 1:10, the plurality of heat dissipation holes extends from the outer surface toward the plurality of heat-generating members, a cross-sectional shape of each heat dissipation hole is substantially perpendicular to an axis of the dissipation hole, and a plurality of echelons protrudes from an edge of a substantially circular dissipation area.

8. The manufacturing method of claim 7 , wherein a hole diameter of each heat dissipation hole is from about 10 to 100 nanometers.

9. The manufacturing method of claim 7 , wherein the plurality of heat dissipation holes is formed by chemical etching, or plasma etching, or reactive ion etching.

10. The manufacturing method of claim 7 , wherein the method further comprising cleaning the housing before shielding the area not to be etched and exposing the etching area.

11. The manufacturing method of claim 7 , wherein the shielding ink is selected from ultra violet curing ink and thermoset ink.

Assignments (3)
CHANGE OF NAME Recorded Aug 30, 2022
From: SHENZHENSHI YUZHAN PRECISION TECHNOLOGY CO., LTD.
To: FULIAN YUZHAN PRECISION TECHNOLOGY CO., LTD.
Reel/Frame 061357/0276 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 15, 2018
From: FU TAI HUA INDUSTRY (SHENZHEN) CO., LTD.; HON HAI PRECISION INDUSTRY CO., LTD.
To: SHENZHENSHI YUZHAN PRECISION TECHNOLOGY CO., LTD.; CLOUD NETWORK TECHNOLOGY SINGAPORE PTE. LTD.
Reel/Frame 045222/0101 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 13, 2016
From: LIU, SHYAN-JUH; HON, KAR-WAI; LIU, SHA-SHA
To: FU TAI HUA INDUSTRY (SHENZHEN) CO., LTD.; HON HAI PRECISION INDUSTRY CO., LTD.
Reel/Frame 040299/0542 →
Priority Claims (1)
CN 2013 1 0324648 · Jul 30, 2013 · national
Continuity (2)
Division 14446503 · Jul 30, 2014
Related Publication 20170060200A1 · Mar 2, 2017