UV-CURING OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS
Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.
1 .- 18 . (canceled)
19 . A solar cell, comprising:
a passivating dielectric layer on a light-receiving surface of a silicon substrate;
an anti-reflective coating (ARC) layer, the ARC layer an ultra-violet (UV) radiation-cured and thermally annealed ARC layer; and
an intermediate material layer disposed between the passivating dielectric layer and the ARC layer, the intermediate material layer selected from the group consisting of an N-type micro-crystalline silicon layer, an N-type poly-crystalline silicon layer, a silicon-rich silicon nitride layer, and a Group III-V material layer, wherein the intermediate material layer is disposed on the passivating dielectric layer, and wherein the ARC layer is disposed on the intermediate material layer.
20 . (canceled)
21 . The solar cell of claim 19 , wherein the passivating dielectric layer comprises a silicon oxide layer.
22 . The solar cell of claim 19 , wherein the silicon substrate is an N-type monocrystalline silicon substrate.
23 . The solar cell of claim 19 , wherein the ARC layer comprises a silicon nitride layer.
24 . The solar cell of claim 19 , wherein the ARC layer comprises an amount of hydrogen therein.
25 . A solar cell, comprising:
a passivating dielectric layer on a light-receiving surface of a silicon substrate;
an intermediate material layer disposed on the passivating dielectric layer and the ARC layer, the intermediate material layer selected from the group consisting of an N-type micro-crystalline silicon layer and an N-type poly-crystalline silicon layer; and
an anti-reflective coating (ARC) layer on the intermediate material layer, the ARC layer an ultra-violet (UV) radiation-cured and thermally annealed ARC layer.
26 . The solar cell of claim 25 , wherein the passivating dielectric layer comprises a silicon oxide layer.
27 . The solar cell of claim 25 , wherein the silicon substrate is an N-type monocrystalline silicon substrate.
28 . The solar cell of claim 25 , wherein the ARC layer comprises a silicon nitride layer.
29 . The solar cell of claim 25 , wherein the ARC layer comprises an amount of hydrogen therein.
30 . The solar cell of claim 25 , wherein the intermediate material layer is an N-type micro-crystalline silicon layer.
31 . The solar cell of claim 25 , wherein the intermediate material layer is an N-type poly-crystalline silicon layer.
32 . A solar cell, comprising:
a passivating dielectric layer on a light-receiving surface of a silicon substrate;
an intermediate material layer disposed on the passivating dielectric layer and the ARC layer, the intermediate material layer selected from the group consisting of a silicon-rich silicon nitride layer, and a Group III-V material layer; and
an anti-reflective coating (ARC) layer on the intermediate material layer, the ARC layer an ultra-violet (UV) radiation-cured and thermally annealed ARC layer.
33 . The solar cell of claim 32 , wherein the passivating dielectric layer comprises a silicon oxide layer.
34 . The solar cell of claim 32 , wherein the silicon substrate is an N-type monocrystalline silicon substrate.
35 . The solar cell of claim 32 , wherein the ARC layer comprises a silicon nitride layer.
36 . The solar cell of claim 32 , wherein the ARC layer comprises an amount of hydrogen therein.
37 . The solar cell of claim 32 , wherein the intermediate material layer is a silicon-rich silicon nitride layer.
38 . The solar cell of claim 32 , wherein the intermediate material layer is a Group III-V material layer.