Capacitive sensing device, fingerprint sensing device and method for manufacturing capacitive sensing device

1. A capacitive sensing device, comprising:

a substrate;

a touch sensing electrode group, disposed above the substrate;

a fingerprint sensing electrode group, disposed above the substrate, comprising:

a first conductive structure comprising a plurality of parallel conducting lines;

a second conductive structure;

an insulation layer disposed between the first conductive structure and the second conductive structure; and

an auxiliary conductive structure disposed on a same side of the insulation layer as the second conductive structure and above a gap of the parallel conducting lines, wherein the auxiliary conductive structure of the fingerprint sensing electrode group and the second conductive structure are made of a same material and are not in electrical contact with each other; and

a capacitive sensing integrated circuit, electrically connected to the touch sensing electrode group and the fingerprint sensing electrode group, sensing a capacitance change in the touch sensing electrode group to generate a touch instruction, and sensing a capacitance change in the fingerprint sensing electrode group to generate a fingerprint pattern.

2. The capacitive sensing device according to claim 1 , wherein the substrate is a transparent substrate that comprises a touch sensing electrode distribution region, the touch sensing electrode group is distributed in the touch sensing electrode distribution region, and the touch sensing electrode group comprises an insulation layer and two layers of conductive structures.

3. The capacitive sensing device according to claim 1 , wherein the substrate comprises a fingerprint sensing electrode distribution region, and the fingerprint sensing electrode group is distributed in the fingerprint sensing electrode distribution region.

4. The capacitive sensing device according to claim 1 , wherein the fingerprint sensing electrode group comprises an insulation layer and two layers of conductive structures.

5. The capacitive sensing device according to claim 4 , wherein both of the two layers of conductive layers are metal mesh layers, or both are transparent electrode layers.

6. The capacitive sensing device according to claim 4 , wherein the two layers of conductive structures are a metal mesh layer and a transparent electrode layer, respectively.

7. The capacitive sensing device according to claim 1 , wherein an electrode distribution density of the fingerprint sensing electrode group is greater than an electrode distribution density of the touch sensing electrode group, and a position of the fingerprint sensing electrode group overlaps a position of the touch sensing electrode group.

8. The capacitive sensing device according to claim 1 , wherein the substrate comprises a recess located above a position of the fingerprint sensing electrode group, a metal ring is formed on a sidewall of the recess, and the metal ring is electrically connected to the capacitive sensing integrated circuit and is provided with a fixed voltage.

9. The capacitive sensing device according to claim 1 , wherein the touch sensing electrode group, the fingerprint sensing electrode group and the capacitive sensing integrated circuit are all disposed above a same side of the substrate.

10. The capacitive sensing device according to claim 1 , further comprising a metal mesh segment, which is disposed on the first conductive structure and in electrical contact the first conductive structure.

11. The capacitive sensing device according to claim 1 , wherein the auxiliary conductive structure of the fingerprint sensing electrode group and the second conductive structure are made of a same material and are in electrical contact with each other.

12. A fingerprint sensing device, comprising:

a substrate;

a first conductive structure, disposed above the substrate, comprising a plurality of parallel conducting lines;

a second conductive structure, disposed above the structure;

an insulation layer, disposed between the first conductive structure and the second conductive structure; and

an auxiliary conductive structure, disposed on a same side of the insulation layer at as the second conductive structure and above a gap of the parallel conducting lines,

wherein the auxiliary conductive structure and the second conductive structure are made of a same material and are not in electrical contact with each other.

13. The fingerprint sensing device according to claim 12 , further comprising a metal mesh segment, which is disposed on the first conductive structure and in electrical contact with the first conductive structure.

14. The fingerprint sensing device according to claim 12 , wherein the auxiliary conductive structure and the second conductive structure are made of a same material and are in electrical contact with each other.