IP Library Granted Patent US 10,435,534
Granted Patent B2
US 10,435,534 · App. 15/352,096 · Granted Oct 8, 2019

Dielectric substrate comprising unsintered polytetrafluoroethylene and methods of making the same

Inventors: Stefan Pitolaj (Macedon, NY); Allen F. Horn, III (Rogers, CT); Christopher J. Caisse (Danielson, CT); Patricia A. LaFrance (Pomfret Center, CT)
Assignee: Garlock Sealing Technologies LLC
C08K3/22B29C43/24B29C48/022C08J5/18G06F1/1613H01B3/002H01Q1/243H01Q9/0485B29K2105/253C08J2327/18C08K2003/2241
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Quick Facts
Patent No.
US 10,435,534
App. No.
15/352,096
Granted
Oct 8, 2019
Kind
B2
Abstract

In an embodiment, a dielectric substrate comprises an unsintered polytetrafluoroethylene; and a high dielectric constant filler, wherein the dielectric constant of the high dielectric constant filler is greater than or equal to 35; wherein the dielectric substrate has a specific gravity of greater than or equal to 90% of a calculated theoretical density of the dielectric substrate, wherein the theoretical specific gravity is calculated based on a measured specific gravity of the high dielectric constant filler, the specific gravity of the unsintered polytetrafluoroethylene, and the relative weight fractions of the unsintered polytetrafluoroethylene and the high dielectric constant filler; and wherein the dielectric substrate has a dielectric constant of greater than or equal to 11.5 as determined at a frequency of 10 GHz.

Claims (19)

1. A dielectric substrate comprising:

an unsintered polytetrafluoroethylene; and

a high dielectric constant filler, wherein the dielectric constant of the high dielectric constant filler is greater than or equal to 35;

wherein the dielectric substrate is subjected to a dry calendering step after a step of removing a lubricant from the dielectric substrate to thereby provide the dielectric substrate with a specific gravity of greater than or equal to 90% of a calculated theoretical density of the dielectric substrate, wherein the theoretical specific gravity is calculated based on a measured specific gravity of the high dielectric constant filler, the specific gravity of the unsintered polytetrafluoroethylene, and the relative weight fractions of the unsintered polytetrafluoroethylene and the high dielectric constant filler; and

wherein the dielectric substrate has a dielectric constant of greater than or equal to 11.5 as determined at a frequency of 10 GHz.

2. The dielectric substrate of claim 1 , wherein the unsintered polytetrafluoroethylene comprises a polytetrafluoroethylene homopolymer.

3. The dielectric substrate of claim 1 , wherein the unsintered polytetrafluoroethylene comprises a trace modified polytetrafluoroethylene homopolymer, wherein the trace modified polytetrafluoroethylene homopolymer comprises less than 1 wt % of a repeat unit derived from a co-monomer other than tetrafluoroethylene based on the total weight of the trace modified polytetrafluoroethylene homopolymer.

4. The dielectric substrate of claim 1 , wherein the unsintered polytetrafluoroethylene polymer is made by emulsion polymerization.

5. The dielectric substrate of claim 1 , wherein the high dielectric constant filler has a dielectric constant of greater than or equal to 100.

6. The dielectric substrate of claim 1 , wherein the high dielectric constant filler comprises titanium dioxide.

7. The dielectric substrate of claim 1 , wherein the high dielectric constant filler comprises titanium dioxide, calcium titanate, strontium titanate, barium titanate, or a combination comprising at least one of the foregoing.

8. The dielectric substrate of claim 1 , wherein the dielectric substrate comprises 50 to 85 wt % of the high dielectric constant filler based on the total weight of the dielectric substrate.

9. The dielectric substrate of claim 1 , wherein the dielectric substrate comprises 15 to 50 wt %, of the unsintered polytetrafluoroethylene based on the total weight of the dielectric substrate.

10. The dielectric substrate of claim 1 , wherein the dielectric substrate consists essentially of the unsintered polytetrafluoroethylene and the high dielectric constant filler.

11. The dielectric substrate of claim 1 , wherein the specific gravity is at least 95% of the theoretical specific gravity of the dielectric substrate.

12. The dielectric substrate of claim 1 , wherein the dielectric constant of the dielectric substrate is greater than or equal to 12.

13. An article comprising the dielectric substrates of claim 1 .

14. The article of claim 13 , wherein the article is a mobile phone, a tablet, or a laptop.

15. The article of claim 13 , wherein the article is an antenna.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 16, 2021
From: PITOLAJ, STEFAN
To: GARLOCK SEALING TECHNOLOGIES LLC
Reel/Frame 058409/0268 →
RELEASE OF SECURITY INTEREST Recorded Jun 3, 2019
From: JPMORGAN CHASE BANK, N.A.
To: ROGERS CORPORATION
Reel/Frame 049342/0350 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2018
From: HORN, ALLEN F., III; CAISSE, CHRISTOPHER J.; LAFRANCE, PATRICIA A.
To: ROGERS CORPORATION
Reel/Frame 046461/0345 →
NOTICE OF GRANT OF SECURITY INTEREST IN PATENTS Recorded Jun 29, 2018
From: GARLOCK SEALING TECHNOLOGIES LLC
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046487/0089 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 31, 2018
From: ROGERS CORPORATION
To: GARLOCK SEALING TECHNOLOGIES LLC
Reel/Frame 045955/0916 →
SECURITY INTEREST Recorded Feb 20, 2017
From: ROGERS CORPORATION
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041757/0748 →
Continuity (2)
Provisional Application 62259680 · Nov 25, 2015
Related Publication 20170145182A1 · May 25, 2017
Cited By (1)
US 12,281,575