IP Library Granted Patent US 10,233,338
Granted Patent B2
US 10,233,338 · App. 15/360,944 · Granted Mar 19, 2019

Fired multilayer stacks for use in integrated circuits and solar cells

Inventors: Brian E. Hardin (San Carlos, CA); Erik Sauar (Oslo, NO); Dhea Suseno (Oakland, CA); Jesse J. Hinricher (Pipestone, MN); Jennifer Huang (Saratoga, CA); Tom Yu-Tang Lin (Berkeley, CA); Stephen T. Connor (San Francisco, CA); Daniel J. Hellebusch (Oakland, CA); Craig H. Peters (Belmont, CA)
Assignee: PLANT PV, Inc.
C09D5/24B05D1/02B23K1/0016B23K35/025B23K35/286B23K35/3006B23K35/3612B33Y10/00C03C8/16C03C8/18H01L31/0201H01L31/0203H01L31/022425H01L31/022433H01L31/022441H01L31/049H01L31/1804H02S40/34C03C2205/00
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Quick Facts
Patent No.
US 10,233,338
App. No.
15/360,944
Granted
Mar 19, 2019
Kind
B2
Abstract

Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.

Claims (50)

1. A fired multilayer stack comprising:

a substrate that has a substrate surface;

a metal particle layer on at least a portion of the substrate surface, the metal particle layer comprising metal particles;

a modified metal particle layer on at least a portion of the substrate surface; and

a modified intercalation layer directly on at least a portion of the modified metal particle layer, the modified intercalation layer having a solderable surface, the modified intercalation layer comprising two sublayers:

an intercalation sublayer directly on at least a portion of the modified metal particle layer; and

a precious metal sublayer directly on at least a portion of the intercalation sublayer;

wherein the solderable surface comprises the precious metal sublayer;

wherein the modified metal particle layer comprises the metal particles and at least one material from the intercalation sublayer; and

wherein the intercalation sublayer comprises a material selected from the group consisting of antimony, arsenic, barium, bismuth, boron, cadmium, calcium, cerium, cesium, chromium, cobalt, gallium, germanium, hafnium, indium, iron, lanthanum, lead, lithium, magnesium, manganese, molybdenum, niobium, phosphorous, potassium, rhenium, selenium, silicon, sodium, strontium, sulfur, tellurium, tin, vanadium, zinc, zirconium, combinations thereof, and alloys thereof, oxides thereof, composites thereof, and other combinations thereof.

2. The fired multilayer stack of claim 1 , wherein:

the modified metal particle layer comprises aluminum particles and is a modified aluminum particle layer;

the intercalation sublayer comprises a bismuth-rich sublayer directly on the modified aluminum particle layer; and

the precious metal sublayer comprises a silver-rich sublayer directly on the bismuth-rich sublayer;

wherein the solderable surface comprises the silver-rich sublayer;

wherein the modified metal particle layer further comprises at least one material selected from the group consisting of aluminum oxides, bismuth, and bismuth oxides.

3. The fired multilayer stack of claim 1 further comprising at least one dielectric layer directly on at least a portion of the substrate surface, wherein the dielectric layer comprises at least one material selected from the group consisting of silicon, aluminum, germanium, hafnium, gallium, and oxides thereof, nitrides thereof, composites thereof, and combinations thereof.

4. The fired multilayer stack of claim 1 , further comprising a first dielectric layer comprising aluminum oxide directly on at least a portion of the substrate surface and a second dielectric layer comprising silicon nitride directly on the first dielectric layer.

5. The fired multilayer stack of claim 1 , further comprising a tabbing ribbon directly on at least a portion of the solderable surface of the modified intercalation layer.

6. The fired multilayer stack of claim 1 , further comprising a solid compound layer directly on the substrate surface; wherein the solid compound layer comprises one or more metals selected from the group consisting of aluminum, copper, iron, nickel, molybdenum, tungsten, tantalum, titanium and one or more materials selected from the group consisting of silicon, oxygen, carbon, germanium, gallium, arsenic, nitrogen, indium and phosphorous.

7. The fired multilayer stack of claim 1 , wherein a portion of the substrate adjacent to the substrate surface is doped with at least one material selected from the group consisting of aluminum, copper, iron, nickel, molybdenum, tungsten, tantalum, titanium, steel and combinations thereof.

8. The fired multilayer stack of claim 1 , wherein a portion of the fired multilayer stack has variable thickness.

9. The fired multilayer stack of claim 1 , wherein a portion of the fired multilayer stack has an average peak to valley height greater than 12 μm.

10. A fired multilayer stack comprising:

a substrate;

a metal particle layer on at least a portion of the substrate, the metal particle layer comprising metal particles;

a modified metal particle layer on at least a portion of the substrate; and

a modified intercalation layer directly on at least a portion of the modified metal particle layer, the modified intercalation layer having a solderable surface;

wherein the modified intercalation layer comprises two phases: a precious metal phase and an intercalation phase;

wherein more than 50% of the solderable surface comprises the precious metal phase;

wherein the modified metal particle layer comprises the metal particles and at least one material from the intercalation phase; and

wherein the intercalation phase comprises a material selected from the group consisting of antimony, arsenic, barium, bismuth, boron, cadmium, calcium, cerium, cesium, chromium, cobalt, gallium, germanium, hafnium, indium, iron, lanthanum, lead, lithium, magnesium, manganese, molybdenum, niobium, phosphorous, potassium, rhenium, selenium, silicon, sodium, strontium, sulfur, tellurium, tin, vanadium, zinc, zirconium, combinations thereof, and alloys thereof, oxides thereof, composites thereof, and other combinations thereof.

11. The fired multilayer stack of claim 1 , wherein the substrate comprises at least one material selected from the group consisting of silicon, silicon dioxide, silicon carbide, aluminum oxide, sapphire, germanium, gallium arsenide, gallium nitride, and indium phosphide.

12. The fired multilayer stack of claim 1 , wherein the metal particle layer comprises a material selected from the group consisting of aluminum, copper, iron, nickel, molybdenum, tungsten, tantalum, titanium, steel and alloys thereof, composites thereof, and other combinations thereof.

13. The fired multilayer stack of claim 1 , wherein the precious metal comprises a material selected from the group consisting of silver, gold, platinum, palladium, rhodium, and alloys thereof, composites thereof, and other combinations thereof.

14. The fired multilayer stack of claim 1 , wherein the substrate comprises a material selected from the group consisting of aluminum, copper, iron, nickel, titanium, steel, zinc, and alloys thereof, composites thereof, and other combinations thereof.

15. The fired multilayer stack of claim 1 , wherein the metal particle layer has a thickness between 0.5 μm and 100 μm.

16. The fired multilayer stack of claim 1 , wherein the metal particle layer has a porosity between 1 and 50%.

17. The fired multilayer stack of claim 1 , wherein the modified intercalation layer has a thickness between 0.5 μm and 10 μm.

18. The fired multilayer stack of claim 1 , wherein the fired multilayer stack has a contact resistance between 0 and 5 mOhm, as determined by transmission line measurement.

19. The fired multilayer stack of claim 1 , further comprising a tabbing ribbon soldered to the modified intercalation layer, wherein there is a peel strength between the tabbing ribbon and the modified intercalation layer, and the peel strength is greater than 1 N/mm.

20. The fired multilayer stack of claim 1 , wherein a portion of the modified metal particle layer has variable thickness.

21. The fired multilayer stack of claim 10 , wherein at least 70 wt % of the solderable surface of the modified intercalation layer comprises a material selected from the group consisting of silver, gold, platinum, palladium, rhodium, and alloys thereof, composites thereof, and other combinations thereof.

22. A fired multilayer stack comprising:

a silicon substrate;

an aluminum particle layer on at least a portion of the silicon substrate;

a modified aluminum particle layer on at least a portion of the silicon substrate; and

a modified intercalation layer directly on the modified aluminum particle layer;

wherein the modified intercalation layer comprises two sublayers: a bismuth-rich sublayer directly on the modified aluminum particle layer and a silver-rich sublayer directly on the bismuth-rich sublayer; and

wherein the modified aluminum particle layer comprises aluminum particles and at least one material selected from the group consisting of aluminum oxides, bismuth, and bismuth oxides.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2019
From: PLANT PV, INC.
To: HITACHI CHEMICAL CO., LTD.
Reel/Frame 048243/0982 →
CONFIRMATORY LICENSE Recorded Jul 25, 2017
From: PLANT PV, INC.
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 043320/0343 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 7, 2017
From: CONNOR, STEPHEN T; PETERS, CRAIG H; HARDIN, BRIAN E.; SUSENO, DHEA; HELLEBUSCH, DANIEL J; SAUAR, ERIK; HUANG, JENNIFER; HINRICHER, JESSE J; LIN, TOM YU-TANG
To: PLANT PV
Reel/Frame 040886/0048 →
Continuity (5)
Provisional Application 62423020 · Nov 16, 2016
Provisional Application 62371236 · Aug 5, 2016
Provisional Application 62318556 · Apr 5, 2016
Provisional Application 62259636 · Nov 24, 2015
Related Publication 20170148933A1 · May 25, 2017